Trench sidewall structure

• US 5,521,114 A
• Filed: 12/10/1993
• Issued: 05/28/1996
• Est. Priority Date: 10/02/1992
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Rajeevakumar, Thekkemadathil
• Primary Examiner(s): Thomas, Tom
• Application Number:
  US08/166,306
• Time in Patent Office: 900 Days
• Field of Search: 437/47, 437/48, 437/52, 437/60, 437/190, 437/191, 437/203
• US Class Current: 438/386
• CPC Class Codes: H01L 29/945 Trench capacitors
• CPC Class Codes: Y10S 257/915 with titanium nitride portion or region
• CPC Class Codes: Y10S 257/924 with passive device, e.g. capacitor, or battery, as integral part of housing or housing element, e.g. cap

Abstract

The invention provides a trench sidewall structure and a method of forming and using the same to reduce parasitic sidewall leakage through a trench sidewall, for example from bitline contact to storage node or from storage node to substrate. The method involves placing a polysilicon layer of the same polarity as that of the array well, along with a diffusion barrier layer such an titanium nitride, between the storage node poly and the oxide collar.

Claims

1. A method of forming a trench structure, said method comprising:

a) etching a trench in a semiconductor substrate, said trench having a substantially vertical sidewall and a substantially horizontal bottom surface;

b) conformally depositing a layer of an oxide collar onto said vertical sidewall and said bottom surface;

c) conformally depositing a layer of doped polysilicon onto said layer of oxide collar;

d) anisotropically etching said doped polysilicon layer and said oxide collar layer overlying said trench bottom surface, leaving only said doped polysilicon layer overlying said oxide collar layer on said vertical sidewall;

e) conformally depositing a diffusion barrier layer onto said doped polysilicon layer and said trench bottom surface; and

f) filling the resulting trench structure with polysilicon so as to form a trench storage node, said trench storage node and deposited layers forming a trench structure.

2. A method of reducing trench sidewall leakage, said method comprising:

a) forming a trench having a trench storage node of polysilicon and having an oxide collar as a trench sidewall surrounding said trench storage node; and

b) adding to said trench sidewall a diffusion barrier layer adjacent said storage node, and a doped polysilicon layer adjacent said diffusion barrier layer;

wherein said diffusion barrier layer and said doped polysilicon layer thereby separate said trench storage node of polysilicon from said oxide collar and thereby reduce trench sidewall leakage from said trench storage node through said oxide collar.

3. A method of reducing diffusion between a layer of polysilicon and an oxide layer, said method comprising:

forming a doped polysilicon layer adjacent to an oxide layer; and

forming an electrically conductive diffusion barrier layer between said doped polysilicon layer and a second polysilicon layer, said second polysilicon layer being of opposite polarity from said doped polysilicon layer, wherein said doped polysilicon layer and said electrically conductive diffusion barrier layer separate said second layer of polysilicon and said oxide layer and thereby reduce diffusion between said separated layers.