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Semiconductor power module having an improved composite board and method of fabricating the same

  • US 5,521,437 A
  • Filed: 07/05/1994
  • Issued: 05/28/1996
  • Est. Priority Date: 07/05/1993
  • Status: Expired due to Fees
First Claim
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1. A semiconductor power module comprising:

  • (a) a composite board which includes an insulating metallic board which includes a metallic plate, a main circuit wiring pattern being disposed on an insulating layer which is formed on a major surface of said insulating metallic board, said insulating layer comprising an epoxy resin; and

    an insulating board which includes an insulating member, a control circuit wiring pattern being disposed on a major surface of said insulating board, said insulating board being disposed adjacent to said insulating metallic board in such a manner that said major surface of said insulating board on which said control circuit wiring pattern is formed is flush with said major surface of said insulating metallic board on which said main circuit wiring pattern is formed,a major surface of said metallic plate being exposed in a bottom surface of said composite board which is opposite said major surfaces of said insulating metallic board and said insulating board seating said main and said control circuit wiring patterns, respectively;

    (b) a power control semiconductor element disposed on said main circuit wiring pattern to control electrical power, said power control semiconductor element including a plurality of insulated gate bipolar transistors;

    (c) a control element disposed on said control circuit wiring pattern to control said power control semiconductor element, said control element outputting control signals to respective gate electrodes of said insulated gate bipolar transistors;

    (d) a cylindrical case for receiving at an end thereof a peripheral portion of said composite board so as to contain said power control semiconductor element and said control element inside; and

    (e) a sealing resin injected into said case to seal said power control semiconductor element and said control element.

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