Electrically-conductive, contrast-selectable, contrast-improving filter

• US 5,521,765 A
• Filed: 07/07/1994
• Issued: 05/28/1996
• Est. Priority Date: 07/07/1994
• Status: Expired due to Term

• Current Assignee: Von Ardenne Anlagentechnik GmbH
• Original Assignee: BOC Group, Inc. (Messer Adolf Family)
• Inventors: Wolfe, Jesse D.
• Primary Examiner(s): Dzierzynski, Paul M.
• Assistant Examiner(s): CHANG, AUDREY Y
• Application Number:
  US08/271,822
• Time in Patent Office: 691 Days
• Field of Search: 359/359, 359/360, 359/361, 359/585, 359/586, 359/588, 359/589, 359/590, 359/884, 359/885, 204/192.23, 428/213, 428/336, 427/166
• US Class Current: 359/885
• CPC Class Codes: G02B 1/116 including electrically conducting layers
• CPC Class Codes: G02B 1/14 Protective coatings, e.g. hard coatings
• CPC Class Codes: H01J 29/896 Anti-reflection means, e.g. eliminating glare due to ambient light

Abstract

The present invention comprises a contrast-improving filter which uses a tri-layer comprising a metal layer, preferably silver, sandwiched between two metal precoat layers. The silver layer is thin so that it is substantially transparent to visible light. Additionally, the contrast-improving filter uses a silicon nitride layer between the tri-layer and further oxide layer to improve the durability and scratch-resistance of the contrast-improving filter.

Claims

1. A thin film contrast-improving filter, comprising:

a transparent substrate;

a substantially transparent dielectric layer;

a precoat layer;

a metal layer consisting essentially of at least one metal selected from the group consisting of silver, gold, copper platinum, and alloys of these metals, said metal layer being substantially transmissive to visible light;

a postcoat layer;

a protective substantially transparent dielectric layer comprising silicon nitride; and

a low-index, substantially-transparent, dielectric layer, the low-index layer having a lower index of refraction than the protective dielectric layer, wherein each of the postcoat and precoat layers has a thickness of 8 Å

or more and is formed from a mixture of nickel metal and at least one of chromium and chromium nitride, the precoat and postcoat layers having a combined thickness of 24 Å

or more.

2. The thin film contrast-improving filter of claim 1, wherein said low-index substantially transparent dielectric layer comprises silicon dioxide.

3. The thin film contrast-improving filter of claim 1, wherein at least one of the precoat or postcoat layers is formed of a mixture of nickel metal and chromium nitride.

4. The thin film contrast-improving filter of claim 1, wherein at least one of the precoat or postcoat layers is formed of nichrome.

5. The thin film contrast-improving filter of claim 1, wherein said metal layer is formed of silver.

6. The thin film contrast-improving filter of claim 5, wherein the thickness of said metal layer is less than 100 angstroms.

7. The thin film contrast-improving filter of claim 1, wherein the substantially transparent dielectric layer, the precoat layer, the metal layer, the postcoat layer, the protective dielectric layer and the low-index dielectric layer have thickness such that these thin film layers have a transmission of visible light greater than 70%.

8. The thin film contrast-improving filter of claim 7, wherein the thin film layers have a transmission of visible light of about 80%.

9. The thin film contrast-improving filter of claim 1, wherein the substrate comprises a substrate having a transmission of visible light less than 80%.

10. The thin film contrast-improving filter of claim 9, wherein said substrate has a transmission of visible light of about 60%.

11. The thin film contrast-improving filter of claim 1 further comprising, located between the postcoat layer and the protective dielectric layer, an additional substantially transparent dielectric layer, an additional precoat layer, an additional metal layer and an additional postcoat layer.

12. The thin film contrast-improving filter of claim 1, wherein:

the transparent substrate has a transmission of visible light less than 80%;

the metal layer is comprised of silver; and

the low-index layer is formed in an oxygen environment, wherein the silicon nitride layer is of a thickness sufficient to protect the silver layer from the oxygen environment used to form the low-index layer and wherein the thicknesses of the thin film layers are such that the thin film layers have a transmission of visible light greater than 50% and the single surface reflectance of the contrast-improving filter is less than 1% over a substantial portion of the visible spectrum.

13. The thin film contrast-improving filter of claim 12, wherein the low-index layer comprises a silicon dioxide layer.

14. The thin film contrast-improving filter of claim 12, wherein said substrate has a transmission of visible light in the range of 30% to 70%.

15. The thin film contrast-improving filter of claim 14, wherein said substrate has a transmission of visible light of about 50%.

16. The thin film contrast-improving filter of claim 12, wherein the protective silicon nitride layer has a thickness greater than 100 Angstroms.

17. The thin film contrast-improving filter of claim 16, wherein the protective silicon nitride layer has a thickness of about 200 Angstroms.

18. The thin film contrast-improving filter of claim 12, wherein the total light transmission through the contrast-improving filter is about 20-40% and substantially uniform through the range of 430-660 nanometers.

19. The thin film contrast-improving filter of claim 18, wherein the total light transmission through the contrast-improving filter is about 30% and substantially uniform through the range of 430-660 nanometers.

20. The thin film contrast-improving filter of claim 12, wherein the substrate is a dyed glass substrate.

21. A method for the production of a durable thin film contrast-improving filter on a transparent substrate, comprising the steps, in sequence, of:

reactively sputtering a first substantially transparent dielectric layer onto said substrate;

depositing a precoat layer;

depositing a metal layer to a thickness such that the metal layer is substantially transmissive to visible light;

depositing a postcoat layer;

reactively sputtering a second substantially transparent protective dielectric layer comprising silicon nitride onto said second metal precoat layer, and

reactively sputtering a substantially transparent low index material onto the second substantially transparent protective dielectric layer, wherein said second substantially transparent protective dielectric layer protects the metal layer when the low index material is sputtered, wherein the precoat and postcoat layers are formed by sputtering nickel and chromium in a nitrogen environment to form a mixture of nickel metal and chromium nitride.

22. The method for the production of a durable thin film contrast-improving filter as defined in claim 21, wherein the step of reactively sputtering the second dielectric layer comprises:

(a) providing a cylindrical magnetron that is coated with a target material comprising silicon; and

(b) reactively sputtering in an atmosphere containing nitrogen so that the second dielectric layer comprises silicon nitride.

23. The method for the production of a durable thin film contrast-improving filter as defined in claim 21, wherein the step of reactively sputtering the low index layer comprises:

(a) providing a cylindrical magnetron that is coated with a target material comprising silicon; and

(b) reactively sputtering in an atmosphere containing oxygen so that the low-index layer comprises silicon dioxide.

24. A thin film contrast-improving filter, comprising:

a transparent substrate;

a substantially transparent dielectric layer;

a precoat layer;

a metal layer formed from a metal selected from the group consisting of silver, gold, copper, and platinum, said metal layer being substantially transmissive to visible light;

a postcoat layer;

a protective substantially transparent dielectric layer comprising silicon nitride; and

a low-index, substantially-transparent, dielectric layer, the low-index layer having a lower index of refraction than the protective dielectric layer, wherein the precoat and postcoat layer are formed of a mixture of nickel metal and chromium nitride.

25. The thin film contrast-improving filter of claim 24, wherein said precoat and said postcoat layers have a combined thickness of 24 Å

or more.

26. A method for the production of a durable thin film contrast-improving filter on a transparent substrate, comprising the steps, in sequence, of:

reactively sputtering a first substantially transparent dielectric layer onto said substrate;

depositing a precoat layer;

depositing a metal layer to a thickness such that the metal layer is substantially transmissive to visible light;

depositing a postcoat layer;

reactively sputtering a second substantially transparent protective dielectric layer comprising silicon nitride onto said second metal precoat layer, and

reactively sputtering a substantially transparent low index material onto the second substantially transparent protective dielectric layer, wherein said second substantially transparent protective dielectric layer protects the metal layer when the low index material is sputtered, said steps being such that each of the postcoat and precoat layers is formed with a thickness of 8 Å

or more and is formed from a mixture of nickel metal and at least one of chromium and chromium nitride, the precoat and postcoat layers having a combined thickness of 24 Å

or more.

27. The method of claim 26, wherein the steps of depositing the precoat and postcoat layers comprise sputtering nickel and chromium in a nitrogen environment to form layers which are a mixture of nickel metal and chromium nitride.