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Vertical geometry light emitting diode with group III nitride active layer and extended lifetime

  • US 5,523,589 A
  • Filed: 09/20/1994
  • Issued: 06/04/1996
  • Est. Priority Date: 09/20/1994
  • Status: Expired due to Term
First Claim
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1. A light emitting diode that emits in the blue portion of the visible spectrum and that is characterized by an extended lifetime, said light emitting diode comprising:

  • a conductive silicon carbide substrate;

    an ohmic contact to said silicon carbide substrate;

    a conductive buffer layer on said substrate and selected from the group consisting of gallium nitride, aluminum nitride, indium nitride, ternary Group III nitrides having the formula Ax B1-x N, where A and B are Group III elements and where x is zero, one, or a fraction between zero and one, quaternary Group III nitrides having the formula Ax By C1-x-y N where A, B, and C are Group III elements;

    x and y, are zero, one, or a fraction between zero and one, and 1 is greater than (x+y), and alloys of silicon carbide with such ternary and quaternary Group III nitrides; and

    a p-n junction diode heterostructure on said buffer layer in which the p-type and n-type layers are selected from the group consisting of binary Group III nitrides and ternary Group III nitrides.

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