Vertical geometry light emitting diode with group III nitride active layer and extended lifetime

• US 5,523,589 A
• Filed: 09/20/1994
• Issued: 06/04/1996
• Est. Priority Date: 09/20/1994
• Status: Expired due to Term

• Current Assignee: CREE Incorporated (Wolfspeed, Inc.)
• Original Assignee: Cree Research, Inc. (Wolfspeed, Inc.)
• Inventors: Dmitriev, Vladimir, Kong, Hua-Shuang, Edmond, John A., Bulman, Gary E.
• Primary Examiner(s): Ngo, Ngan V.
• Application Number:
  US08/309,251
• Time in Patent Office: 623 Days
• Field of Search: 257/77, 257/96, 257/97, 257/103, 372/43, 372/44, 372/45, 372/46
• US Class Current: 257/77
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

A light emitting diode emits in the blue portion of the visible spectrum and is characterized by an extended lifetime. The light emitting diode comprises a conductive silicon carbide substrate; an ohmic contact to the silicon carbide substrate; a conductive buffer layer on the substrate and selected from the group consisting of gallium nitride, aluminum nitride, indium nitride, ternary Group III nitrides having the formula A_x B_1-x N, where A and B are Group III elements and where x is zero, one, or a fraction between zero and one, and alloys of silicon carbide with such ternary Group III nitrides; and a double heterostructure including a p-n junction on the buffer layer in which the active and heterostructure layers are selected from the group consisting of binary Group III nitrides and ternary Group III nitrides.

Claims

1. A light emitting diode that emits in the blue portion of the visible spectrum and that is characterized by an extended lifetime, said light emitting diode comprising:

a conductive silicon carbide substrate;

an ohmic contact to said silicon carbide substrate;

a conductive buffer layer on said substrate and selected from the group consisting of gallium nitride, aluminum nitride, indium nitride, ternary Group III nitrides having the formula A_x B_1-x N, where A and B are Group III elements and where x is zero, one, or a fraction between zero and one, quaternary Group III nitrides having the formula A_x B_y C_1-x-y N where A, B, and C are Group III elements;

x and y, are zero, one, or a fraction between zero and one, and 1 is greater than (x+y), and alloys of silicon carbide with such ternary and quaternary Group III nitrides; and

a p-n junction diode heterostructure on said buffer layer in which the p-type and n-type layers are selected from the group consisting of binary Group III nitrides and ternary Group III nitrides.

2. A light emitting diode according to claim 1 wherein said p-n junction diode heterostructure comprises a single heterostructure.

3. A light emitting diode according to claim 1 wherein said p-n junction diode heterostructure comprises a double heterostructure in which the active and heterostructure layers are selected from the group consisting of binary Group III nitrides and ternary Group III nitrides.

4. A light emitting diode according to claim 1 wherein said buffer layer comprises gallium nitride.

5. A light emitting diode according to claim 1 and further comprising a gallium nitride epitaxial layer on said buffer layer between said gallium nitride buffer layer and said junction diode structure.

6. A light emitting diode according to claim 1 and having a lifetime of greater than 10,000 hours at 50 milliamps at room temperature.

7. A light emitting diode according to claim 1 and having a lifetime of greater than 10,000 hours at 30 milliamps at room temperature.

8. A light emitting diode according to claim 1 and further comprising an ohmic contact to the top of said junction diode structure, and wherein said ohmic contact to said substrate is on the bottom of said substrate to thereby form a vertical device structure.

9. A light emitting diode according to claim 3 wherein said double heterostructure comprises:

an active layer; and

upper and lower heterostructure layers adjacent said active layer, and formed of a composition selected from the group consisting of gallium nitride, aluminum nitride, indium nitride, ternary Group III nitrides having the formula A_x B_1-x N, where A and B are Group III elements and where x is zero, one, or a fraction between zero and one, and alloys of silicon carbide with such ternary Group III nitrides.

10. A light emitting diode according to claim 3 wherein said double heterostructure comprises an active layer selected from the group consisting of gallium nitride, aluminum nitride, indium nitride, ternary Group III nitrides having the formula A_x B_1-x N, where A and B are Group III elements and where x is zero, one, or a fraction between zero and one, and alloys of silicon carbide with such ternary Group III nitrides.

11. A light emitting diode according to claim 9 wherein said heterostructure layers have the formula Al_x Ga_1-x N, and where x is 0, 1, or a fraction between 0 and 1.

12. A light emitting diode according to claim 9 wherein said heterostructure layers have a bandgap larger than said active layer.

13. A light emitting diode according to claim 9 wherein said heterostructure layers have a refractive index smaller than said active layer.

14. A light emitting diode according to claim 9 wherein said upper heterostructure layer has the opposite conductivity type from said lower heterostructure layer.

15. A light emitting diode according to claim 14 wherein said upper heterostructure layer is p-type and said active layer and said lower heterostructure layer are n-type.

16. A light emitting diode according to claim 14 wherein said upper heterostructure layer and said active layer are n-type and said lower heterostructure layer is p-type.

17. A light emitting diode according to claim 9 wherein said active layer has the composition In_z Ga_1-z N, where z is a fraction between zero and one.

18. A light emitting diode according to claim 1 wherein said buffer layer comprises:

a first layer upon said substrate formed of a graded composition of silicon carbide aluminum gallium nitride in which the portion adjacent the substrate is substantially entirely silicon carbide and the portion furthest from the substrate is substantially entirely aluminum gallium nitride with the portions therebetween being progressively graded in content from predominantly silicon carbide to predominantly aluminum gallium nitride; and

a second layer upon said first layer and formed of a graded composition of aluminum gallium nitride.

19. A light emitting diode according to claim 18 wherein the composition of said graded second layer is progressively graded from a composition matching the composition of said first buffer layer to a composition matching the composition of the lowest layer of said double heterostructure.

20. A light emitting diode according to claim 1 wherein said buffer includes at least one graded layer of silicon carbide and a group III nitride in which the graded layer is silicon carbide at the interface with said substrate, and the graded layer is a composition matching the composition of the lowest layer of said double heterostructure at the interface with said double heterostructure.

21. A light emitting diode according to claim 1 and further comprising a strain-minimizing contact layer above said double heterostructure that has a lattice constant substantially the same as said buffer layer.

22. A light emitting diode according to claim 1 wherein an upper surface of said silicon carbide substrate is doped with aluminum.

23. A light emitting diode according to claim 1 wherein said substrate and said buffer layer are each doped with impurities.

24. A light emitting diode according to claim 1 wherein said silicon carbide substrate has a polytype selected from the group consisting of 3C, 4H, 6H, and 15R.

25. A light emitting diode (LED) having an extended light emitting lifetime, the LED comprising:

a conductive silicon carbide substrate;

a conductive buffer layer on said silicon carbide substrate and selected from the group consisting of gallium nitride, aluminum nitride, indium nitride, ternary Group III nitrides having the formula A_x B_1-x N, where A and B are Group III elements and where x is zero, one, or a fraction between zero and one, quaternary Group III nitrides having the formula A_x B_y C_1-x-y N where A, B, and C are Group III elements;

x and y, are zero, one, or a fraction between zero and one, and 1 is greater than (x+y), and alloys of silicon carbide with such ternary Group III nitrides;

a first Group III nitride layer formed on said buffer layer, said first Group III nitride layer having a first conductivity type;

a second Group III nitride layer formed on said first Group III nitride layer, said second Group III nitride layer having a second conductivity type so that said first and second Group III nitride layers form a p-n junction device;

said first and second Group III nitride layers forming a heterostructure;

an ohmic contact formed on said second Group III nitride layer; and

a second ohmic contact formed on said silicon carbide substrate so that a current supplied across said first and second ohmic contacts to the p-n junction device produces a high light intensity output therefrom.

26. A light emitting diode according to claim 25 wherein said nitride layers are selected from the group consisting of gallium nitride, aluminum nitride, indium nitride, ternary Group III nitrides having the formula A_x B_1-x N, where A and B are Group III elements and where x is zero, one, or a fraction between zero and one, quaternary Group III nitrides having the formula A_x B_y C_1-x-y N where A, B, and C are Group III elements;

x and y, are zero, one, or a fraction between zero and one, and 1 is greater than (x+y), and alloys of silicon carbide with such ternary Group III nitrides.

27. A light emitting diode according to claim 25 wherein said first and second Group III nitride layers comprise a single heterostructure.

28. A light emitting diode according to claim 25 wherein said first and second Group III nitride layers comprise a double heterostructure.

29. A light emitting diode according to claim 25, wherein said conductive buffer layer comprises a lower intermediate layer formed of silicon carbide positioned on said silicon carbide substrate and an upper intermediate layer formed of a nitride alloy positioned on said lower intermediate layer.

30. A light emitting diode according to claim 25 wherein said buffer layer comprises:

a first layer upon said substrate formed of a graded composition of silicon carbide aluminum gallium nitride in which the portion adjacent the substrate is substantially entirely silicon carbide and the portion furthest from the substrate is substantially entirely aluminum gallium nitride with the portions therebetween being progressively graded in content from predominantly silicon carbide to predominantly aluminum gallium nitride; and

a second layer upon said first layer and formed of a graded composition of aluminum gallium nitride.

31. A light emitting diode according to claim 25 wherein the composition of said graded second layer is progressively graded from a composition matching the composition of said first buffer layer to a composition matching the composition of the lowest layer of said junction device.

32. A light emitting diode according to claim 25 wherein said buffer includes at least one graded layer of silicon carbide and a group III nitride in which the graded layer is silicon carbide at the interface with said substrate, and the graded layer is a composition matching the composition of the lowest layer of said junction device at the interface of said junction device with said graded layer.

33. A light emitting diode according to claim 25, wherein an upper surface of said silicon carbide substrate is doped with aluminum.

34. A light emitting diode according to claim 25, wherein said first and second Group III nitride layers are formed of gallium nitride, and wherein a double crystal X-ray rocking curve for the light emitting diode has a full width half maximum of about 85 arcseconds for GaN.

35. A light emitting diode that emits in the blue portion of the visible spectrum and that is characterized by an extended lifetime, said light emitting diode comprising:

a conductive silicon carbide substrate;

an ohmic contact to said silicon carbide substrate;

a conductive buffer on said substrate, said buffer comprising

a first layer upon said substrate formed of a graded composition of silicon carbide aluminum gallium nitride in which the portion adjacent the substrate is substantially entirely silicon carbide and the portion furthest from the substrate is substantially entirely aluminum gallium nitride with the portions therebetween being progressively graded in content from predominantly silicon carbide to predominantly aluminum gallium nitride; and

a second layer upon said first layer and formed of a graded composition of aluminum gallium nitride; and

a p-n junction diode structure on said buffer layer in which the p-type and n-type layers are selected from the group consisting of binary Group III nitrides and ternary Group III nitrides.

36. A light emitting diode (LED) having an extended light emitting lifetime, the LED comprising:

a conductive silicon carbide substrate;

a conductive buffer on said substrate, said buffer comprising

a first layer upon said substrate formed of a graded composition of silicon carbide aluminum gallium nitride in which the portion adjacent the substrate is substantially entirely silicon carbide and the portion furthest from the substrate is substantially entirely aluminum gallium nitride with the portions therebetween being progressively graded in content from predominantly silicon carbide to predominantly aluminum gallium nitride; and

a second layer upon said first layer and formed of a graded composition of aluminum gallium nitride; and

a first Group III nitride layer formed on said second buffer layer, said first Group III nitride layer having a first conductivity type;

a second Group III nitride layer formed on said first Group III nitride layer, said second Group III nitride layer having a second conductivity type so that said first and second Group III nitride layers form a p-n junction device;

an ohmic contact formed on said second Group III nitride layer; and

a second ohmic contact formed on said silicon carbide substrate so that a current supplied across said first and second ohmic contacts to the p-n junction device produces a high light intensity output therefrom.