Semiconductor device having laminated tight and coarse insulating layers

• US 5,523,616 A
• Filed: 10/25/1994
• Issued: 06/04/1996
• Est. Priority Date: 10/29/1993
• Status: Expired due to Fees

• Current Assignee: NEC Electronics Corporation (Renesas Electronics Corporation)
• Original Assignee: NEC Corporation
• Inventors: Den, Yasuhide
• Primary Examiner(s): BROWN, PETER T
• Application Number:
  US08/328,456
• Time in Patent Office: 588 Days
• Field of Search: 257/639-641, 257/758-760, 257/649, 257/637
• US Class Current: 257/637
• CPC Class Codes: H01L 23/3171 the coating being directly applied to the semiconductor body, e.g. passivation layer H01L23/3178 takes precedence
• CPC Class Codes: H01L 23/3192 Multilayer coating
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

In a semiconductor device having a passivation layer, the passivation layer includes a laminated configuration formed by a plurality of tight insulating layers and a plurality of coarse insulating layers alternating with the tight insulating layers.

Claims

1. A semiconductor device comprising:

a semiconductor substrate;

an element formed above said semiconductor substrate; and

a passivation layer formed on said element, said passivation layer including a laminated configuration formed by a plurality of tight insulating layers and a plurality of coarse insulating layers alternating with said tight insulating layers, said insulating layers being made of silicon nitride.

2. A device as set forth in claim 1, wherein a density of said tight insulating layers is about 2.60 g/cm³, and a density of said coarse insulating layers being about 2.55 g/cm³.

3. A device as set forth in claim 1, wherein said tight insulating layers and said coarse insulating layers are manufactured by using the same CVD apparatus.

4. A semiconductor device comprising:

a semiconductor substrate;

an element formed above said semiconductor substrate; and

a passivation layer formed on said element, said passivation layer including a laminated configuration formed by a plurality of first insulating layers and a plurality of second insulating layers alternating with said first insulating layers, said first and second insulating layers being made of the silicon nitrite,

a density of said first insulating layers being larger than density of said second insulating layers.

5. A device as set forth in claim 4, wherein a density of said first insulating layers is about 2.60 g/cm³, and a density of said second insulating layers being about 2.55 g/cm³.

6. A device as set forth in claim 4, wherein said first insulating layers and said second insulating layers are manufactured by using the same CVD apparatus.