Coplanar linear dual switch module

• US 5,523,620 A
• Filed: 02/14/1994
• Issued: 06/04/1996
• Est. Priority Date: 02/14/1994
• Status: Expired due to Term

• Current Assignee: Delphi Technologies, Inc. (BorgWarner Incorporated)
• Original Assignee: Delco Electronics Corporation (Motors Liquidation Co. GUC Trust)
• Inventors: Nakanishi, Todd G., Eytcheson, Charles T., Bramel, Michael D., Lachenmaier, Frank D., Tagle, John D.
• Primary Examiner(s): Crane, Sara W.
• Assistant Examiner(s): CLARK, SHEILA V
• Application Number:
  US08/195,659
• Time in Patent Office: 841 Days
• Field of Search: 257/723, 257/724, 257/776, 257/341, 257/331, 257/690, 257/692
• US Class Current: 257/690
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/49111 the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2224/4917 Crossed wires
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01047 Silver [Ag]
• CPC Class Codes: H01L 2924/014 Solder alloys
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: H01L 2924/12042 LASER
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/1306 Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H02M 7/003 : Constructional details, e.g. physical layout, assembly, wiring or busbar connections

Abstract

A readily manufacturable low inductance linear semiconductor switching module having coplanar contacts. Also disclosed is a pretestable terminal subassembly for such a module, and a method of making such a terminal subassembly. The module can contain high power, high frequency semiconductor switching devices, operating at high power but low inductance. The module incorporates compositional, geometrical and electrical symmetry in a linear configuration. The terminal subassembly is readily fabricated and assembled into the module. In addition, it permits use of short internal leads that are readily connected to the terminal subassembly.

Claims

1. A semiconductor switching device module of reduced inductance adapted for commercial manufacture comprising:

a module housing having a baseplate;

a first terminal plate having opposed major faces and a contoured edge having spaced mutually aligned contact areas;

a second terminal plate disposed on said baseplate, said second terminal plate member having opposed major faces and a contoured edge having spaced mutually aligned contact areas extending out of the plane of said second terminal plate;

said first terminal plate being disposed in relation to said second terminal plate such that facing major faces of said first and second terminal plates are generally parallel to one another and disposed in generally overlapping relationship, but with said edges in non-overlapping lateral alignment and providing at least one pair of adjacent coplanar contact areas from said first and second terminal plates;

at least one insulated gate semiconductor switching device disposed on said baseplate in close proximity to said pair of contact areas; and

means for respectively interconnecting said pair of adjacent contact areas to input and output regions of said semiconductor switching device, whereby input current to and output current from said semiconductor switching device can pass through said contact areas and said terminal plates in opposite directions and provide reduced net inductance in said module.

2. The semiconductor switching device module as defined in claim 1 wherein the semiconductor switching device is an insulated gate bipolar transistor and the terminal plates are embedded in an electrically nonconductive material, effective to produce a unitary composite terminal subassembly.

3. The semiconductor switching device module as defined in claim 2 wherein the terminal plate contact areas of each terminal plate form a row of contact areas on the edge of each terminal plate, the contact areas are on fingers extending from the respective edges of the terminal plates, the fingers of the respective plate edges are interdigitated to form a combined row of contact areas in which contact areas of the respective terminal plates alternate, a plurality of semiconductor switching devices are disposed on said baseplate in a symmetrical row parallel to and adjacent to said row of contact areas, and means for interconnecting adjacent pairs of said contact areas to given semiconductor switching devices in said row of switching devices.

4. The semiconductor switching device module as defined in claim 1 wherein said first terminal plate has two edges that form two parallel rows of contact areas, the second terminal plate is narrower than the first terminal plate, a third terminal plate is disposed on said baseplate, the third terminal plate has opposed major faces and is narrower than the first terminal plate, the third terminal plate has a contoured edge having spaced mutually aligned contact areas forming a row of contact areas, said second and third terminal plates are disposed in the same plane such that each of the second and third terminal plates substantially overlaps the first terminal member, allowing the rows of contact areas on the second and third terminal plates to interdigitate with the contact areas on the first terminal plate.

5. The semiconductor switching device module as defined in claim 4 wherein each semiconductor switching device is disposed on its own separate substrate, the substrates are symmetrically arrayed in rows adjacent and parallel to the contact area rows, individual contact areas are fingers on the edges of the terminal plates, and the fingers are symmetrically arranged with respect to the substrates.

6. The semiconductor switching device module as defined in claim 5 wherein the terminal plates are embedded within plastic, effective to form a terminal frame subassembly, and the terminal frame subassembly is bonded to the baseplate of the module housing.

7. The semiconductor switching device module as defined in claim 4 wherein the impedance of the second and third terminal plates is about equal and their combined impedance is about equal to the impedance of the first terminal member.

8. The semiconductor switching device module as defined in claim 4 wherein each of the terminal plates have an integral upstanding terminal lug thereon, the first terminal plate has conformations to accommodate the terminal lugs of the first and second terminal plates, and the terminal plates are embedded in an electrically nonconductive material that does not cover said terminal lugs or contact areas, effective to form a unitary composite terminal subassembly.

9. The semiconductor switching device module as defined in claim 8 wherein the housing contains embedded lead frame portions for Kelvin connections to said terminal subassembly and for gate connections to said semiconductor devices.

10. A terminal plate combination for a semiconductor power module comprising:

a first terminal plate having aligned and coplanar contact areas along at least one edge;

portions of said first terminal plate removed at said edge between said aligned and coplanar contact areas, to form openings between said aligned and coplanar contact areas at said edge;

a second terminal plate having aligned and coplanar contact areas along an edge thereof;

portions of said second terminal plate removed at said edge between said aligned and coplanar contact areas, to form openings between said aligned and coplanar contact areas at said edge complementarily to the openings formed between the contact areas on the first terminal plate;

the aligned and coplanar contact areas on at least one of said terminal plates disposed out of the plane of such terminal plate;

said first and second terminal plates being disposed adjacent in parallel relationship, with the contact areas of one terminal plate disposed between but spaced from the contact areas of the other terminal plate, so as to form a coplanar line of such contact areas; and

other portions of each of said plates having major surfaces closely spaced and parallel to one another, so as to allow current flow in opposite directions in such other portions;

effective to form a low inductance terminal frame combination for a semiconductor switching device.

11. The terminal plate combination as described in claim 10 wherein the first and second terminal plates are embedded within a matrix of electrically nonconductive material, effective to form a terminal frame subassembly.

12. The terminal plate combination as described in claim 11 wherein the nonconductive material is injection molded plastic.

13. The terminal plate combination as described in claim 10 wherein each of the terminal members have an integral upstanding terminal lug thereon, and one of the terminal plates has a conformation to accommodate the terminal lug of the other terminal plate.

14. A terminal plate subassembly for a semiconductor dual switch power module comprising:

a first terminal plate having aligned and coplanar contact areas along each of two parallel edges, so as to form first and second parallel lines of contact areas thereon;

portions of said first terminal plate removed at each of its edges between said aligned and coplanar contact areas, so as to form openings between said aligned and coplanar contact areas at each said edge;

a second terminal plate having aligned and coplanar contact areas along an edge thereof, said second terminal plate being narrower than the first terminal plate;

portions of said second plate removed at its edge between said aligned and coplanar contact areas, so as to form openings between said aligned and coplanar contact areas at said edge complementarily to the openings formed between the contact areas of said first line of contact areas on the first terminal plate;

a third terminal plate having aligned and coplanar contact areas along an edge thereof, said third terminal plate being narrower than the first terminal plate;

portions of said third plate removed at its edge between said aligned and coplanar contact areas, so as to form openings between said aligned and coplanar contact areas at said edge complementarily to the openings formed between the contact areas of said second line of contact areas on the first terminal plate;

the aligned and coplanar contact areas on at least one of said first terminal plate and said second terminal plate being disposed out of the plane of the terminal plate;

the aligned and coplanar contact areas on at least one of said first terminal plate and said third terminal plate being disposed out of the plane of the terminal plate;

said first and second terminal plates being disposed adjacent in parallel relationship, and also said first and third terminal plates being disposed adjacent in parallel relationship, so as to form two terminal plate pairs, with the contact areas of the terminal plates in each pair disposed between but spaced from the contact areas of the other terminal plate in the pair, so as to form two coplanar and parallel lines of such contact areas;

other portions of each of said terminal plate pairs having major surfaces adjacent and parallel to one another, so as to allow adjacent current flow in opposite directions in such other portions; and

said terminal plates embedded in a matrix of electrically nonconductive material that leaves said contact areas exposed,

effective to form a unitary and pretestable low inductance terminal frame subassembly for a high power semiconductor switching module.

15. The terminal plate subassembly as described in claim 14 wherein the second and third terminal plates are coplanar, have facing edges in such plane, the combined other portions of said second and third terminal plates generally corresponding in area to the other portion of said first terminal plate, effective to provide substantial overlap between said other portions of said terminal plates.

16. The terminal plate subassembly as described in claim 14 wherein the other portions of the terminal plates have substantially similar impedance, and the terminal plates have terminal lugs thereon.

17. The terminal plate subassembly as described in claim 14 wherein the edges of the second and third terminal plates are bent but not the first terminal plate, so that when assembled with the first terminal plate, the contact areas on the edges of all three terminal plates are coplanar.

18. The terminal plate subassembly as described in claim 14 wherein the terminal plates are spaced by a preformed plastic sheet, which is also embedded within the matrix of electrically nonconductive material.