Method for protecting gallium arsenide mmic air bridge structures

• US 5,524,339 A
• Filed: 09/19/1994
• Issued: 06/11/1996
• Est. Priority Date: 09/19/1994
• Status: Expired due to Term

• Current Assignee: Lockheed Martin Corporation (Martin Marietta Corporation)
• Original Assignee: Martin Marietta Corporation
• Inventors: Durocher, Kevin M., Saia, Richard J., Gorowitz, Bernard
• Primary Examiner(s): Arbes, Carl J.
• Application Number:
  US08/308,886
• Time in Patent Office: 631 Days
• Field of Search: 29/890, 29/841, 29/832, 437/209, 361/795
• US Class Current: 29/841
• CPC Class Codes: H01L 2224/24227 the HDI interconnect not connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the semiconductor or solid-state body being mounted in a cavity or on a protrusion of the item
• CPC Class Codes: H01L 2224/82039 using a laser
• CPC Class Codes: H01L 23/29 characterised by the material , e.g. carbon interlayer dielectrics H01L23/5329
• CPC Class Codes: H01L 23/315 the encapsulation having a cavity
• CPC Class Codes: H01L 23/5385 Assembly of a plurality of insulating substrates
• CPC Class Codes: H01L 23/5389 the chips being integrally enclosed by the interconnect and support structures
• CPC Class Codes: H01L 23/562 Protection against mechanical damage H01L23/02, H01L23/28 take precedence
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/01027 Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01074 Tungsten [W]
• CPC Class Codes: H01L 2924/01082 Lead [Pb]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1423 : Monolithic Microwave Integrated Circuit [MMIC]
• CPC Class Codes: H01L 2924/15153 : the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/15165 : Monolayer substrate
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: Y10T 29/49144 : by metal fusion
• CPC Class Codes: Y10T 29/49146 : with encapsulating, e.g., potting, etc.

Abstract

In a method for preserving an air bridge structure on an integrated circuit chip, a protective layer is plasma-deposited over the top and sides of the air bridge. A high density interconnect structure is applied over the chip and protective layer. The protective film provides mechanical strength during the application of the high density interconnect structure to prevent deformation. It also prevents any contamination from intruding under the air bridge. More importantly, the protective film only negligibly impedes the performance of the air bridge and therefore does not need to be removed, thereby eliminating the necessity of ablating the HDI structure.

Claims

1. A method for making an electronics module, comprising the steps of:

(1) disposing a plurality of electronic chips on a substrate surface, at least some of the chips including contact pads, and at least one of the chips including a sensitive structure;

(2) encasing the sensitive structure within a protective layer which does not impede the performance of the sensitive structure and encases the sensitive structure from a top and sides, thereby protecting the sensitive structure from damage and processing contamination; and

(3) applying at least one stratum of a high density interconnect structure, comprising the steps of;

(a) applying a dielectric film layer over the chips and the substrate surface;

(b) providing a plurality of via openings in the dielectric film, the openings being disposed over at least some of the contact pads; and

(c) providing a pattern of electrical conductors on the film so that the conductors extend between the via openings so as to electrically connect selected contact pads.

2. The method for making an electronics module according to claim 1, wherein the sensitive structure is an air bridge and the method is carried out at a temperature between about 240°

C. and 260°

C.

3. The method for making an electronics module according to claim 2, wherein a primer layer is deposited over the sensitive structure prior to encasing the sensitive structure within the protective layer.

4. The method for making an electronics module according to claim 3, wherein the primer layer is silicon nitride

5. The method for making an electronics module according to claim 2, wherein the protective layer is a plasma-deposited, amorphous and hydrogenated carbon layer.

6. The method for making an electronics module according to claim 5, wherein the protective layer is a simple hydrocarbon having 1 to 5 carbons.

7. The method for making an electronics module according to claim 6, wherein the simple hydrocarbon has a boiling point below about 100°

C.

8. The method for making an electronics module according to claim 6, wherein the simple hydrocarbon is 2-butanone.

9. The method of claim 2, wherein the step of removing the protective layer leaves the sensitive structure essentially free of processing contamination.

10. The method of claim 1, wherein the high density interconnect structure is removed from over the sensitive structure by large area ablation and the protective layer is removed from over the sensitive structure.

11. The module formed by the method of claim 1, wherein the area under the sensitive structure is substantially devoid of the protective layer.