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Image sensor having TFT gate electrode surrounding the photoelectric conversion element

  • US 5,525,813 A
  • Filed: 01/26/1995
  • Issued: 06/11/1996
  • Est. Priority Date: 04/19/1991
  • Status: Expired due to Fees
First Claim
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1. An image sensor comprising:

  • a substrate;

    a photoelectric conversion element formed on said substrate for converting luminous energy to electric signals, said photoelectric conversion element defining a first area on a surface of said substrate underlying and being coextensive with said photoelectric conversion element; and

    a thin-film switching transistor formed on said substrate, said thin-film switching transistor having a control electrode formed adjacent an edge portion of said photoelectric conversion element, the control electrode for at times conducting said electric signals from said photoelectric conversion element through a gate area underlying and coextensive with said control electrode, in response to application of a voltage applied thereto, said control electrode of said thin-film switching transistor having a U-shaped configuration, said control electrode defining a second area in said surface of said substrate underlying and coextensive with said control electrode, said second area substantially surrounding said first area.

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