Image sensor having TFT gate electrode surrounding the photoelectric conversion element

• US 5,525,813 A
• Filed: 01/26/1995
• Issued: 06/11/1996
• Est. Priority Date: 04/19/1991
• Status: Expired due to Fees

• Current Assignee: Fuji Xerox Company Limited (Fujifilm Holdings Corporation)
• Original Assignee: Fuji Xerox Company Limited (Fujifilm Holdings Corporation)
• Inventors: Miyake, Hiroyuki, Sakai, Kazuhiro
• Primary Examiner(s): Jackson, Jr., Jerome
• Assistant Examiner(s): GUAY, JOHN FRANCIS
• Application Number:
  US08/378,940
• Time in Patent Office: 502 Days
• Field of Search: 257/292, 257/53, 257/59, 257/347, 257/448, 257/444, 257/294, 257/72, 257/443, 257/293, 257/440, 250/208.1
• US Class Current: 257/59
• CPC Class Codes: H01L 27/14665 Imagers using a photoconductor layer
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

An image sensor is reduced in size by combining a photoelectric conversion element with a transfer element thin film transistor (TFT). The photoelectric conversion element comprises a lamination including a metal electrode, a photoconductive layer and a transparent electrode. The TFT transfer element comprises a gate electrode, a drain electrode and a source electrode. In the image sensor, the metal electrode of the photoelectric conversion element also serves as the drain electrode of the TFT. In addition, the gate electrode is formed around the photoelectric conversion element, and the source electrode is formed around the gate electrode.

Claims

1. An image sensor comprising:

a substrate;

a photoelectric conversion element formed on said substrate for converting luminous energy to electric signals, said photoelectric conversion element defining a first area on a surface of said substrate underlying and being coextensive with said photoelectric conversion element; and

a thin-film switching transistor formed on said substrate, said thin-film switching transistor having a control electrode formed adjacent an edge portion of said photoelectric conversion element, the control electrode for at times conducting said electric signals from said photoelectric conversion element through a gate area underlying and coextensive with said control electrode, in response to application of a voltage applied thereto, said control electrode of said thin-film switching transistor having a U-shaped configuration, said control electrode defining a second area in said surface of said substrate underlying and coextensive with said control electrode, said second area substantially surrounding said first area.

2. An image sensor according to claim 1, wherein said photoelectric conversion element includes:

a metal electrode;

a photoconductive layer overlaying said metal electrode; and

a transparent electrode overlaying said photoconductive layer.

3. An image sensor according to claim 2, wherein said photoconductive layer includes amorphous silicon.

4. An image sensor according to claim 1 further comprising resetting means for resetting said photoelectric conversion element.

5. An image sensor according to claim 4 wherein said resetting means includes another thin-film transistor having a control electrode for performing said resetting in response to application of a voltage to said control electrode, said control electrode surrounding said photoelectric conversion element.

6. An image sensor according to claim 1 further comprising a gate pulse generating means connected to a gate of said thin-film switching transistor for applying a gate pulse to said thin-film switching transistor to render it conductive.