Diamond film structure with high thermal conductivity
First Claim
1. A continuous free-standing diamond film having an uninterrupted columnar structure of diamond crystals deposited by chemical vapor deposition having at least two thermal conductivity diamond layers, said diamond film comprising:
- a thermal conducting diamond layer A having thermal conductivity in a direction perpendicular to a diamond film plane greater than thermal conductivity in a direction parallel to the diamond film plane, and a thermal conducting diamond layer B having thermal conductivity in the direction perpendicular to the diamond film plane equal to thermal conductivity in the direction parallel to the diamond film plane, with thermal conductivity in diamond layer A and diamond layer B respectively controlled by a different diamond growth rate and a different chemical vapor deposition substrate temperature, where diamond layer A is deposited at the diamond growth rate and substrate temperature greater than the diamond growth rate and substrate temperature used to deposit diamond layer B, wherein the substrate temperature for depositing diamond layer A is between 900°
-1000°
C. and the substrate temperature for depositing diamond layer B is between 700°
-850°
C., said substrate temperature being a temperature of a substrate in a chemical vapor deposition chamber used as a surface for depositing the diamond film, and said diamond film plane being the same plane as a surface of the substrate that said diamond film is deposited on in the chemical vapor deposition chamber, and diamond layer A being up to fifty times as thick as diamond layer B and diamond layer B being up to twenty percent as thick as diamond layer A.
3 Assignments
0 Petitions
Accused Products
Abstract
A continuous diamond structure deposited by chemical vapor deposition is disclosed having at least two thermal conductivity diamond layers controlled by the diamond growth rate where one thermal conductivity diamond layer is grown at a high growth rate of at least one micron per hour for hot filament chemical vapor deposition and at least 2-3 microns per hour for microwave plasma assisted chemical vapor deposition, on a substrate such as molybdenum in a chemical vapor deposition chamber and at a substrate temperature that promotes the high growth rate, and the other thermal conductivity diamond layer is grown at a growth rate and substrate temperature lower than the high growth rate diamond layer. High growth rate and low growth rate diamond layers can be deposited in any sequence to obtain a continuous diamond structure that does not show distinguishable, separate, crystalline columnar layers, having improved thermal conductivity.
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Citations
5 Claims
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1. A continuous free-standing diamond film having an uninterrupted columnar structure of diamond crystals deposited by chemical vapor deposition having at least two thermal conductivity diamond layers, said diamond film comprising:
- a thermal conducting diamond layer A having thermal conductivity in a direction perpendicular to a diamond film plane greater than thermal conductivity in a direction parallel to the diamond film plane, and a thermal conducting diamond layer B having thermal conductivity in the direction perpendicular to the diamond film plane equal to thermal conductivity in the direction parallel to the diamond film plane, with thermal conductivity in diamond layer A and diamond layer B respectively controlled by a different diamond growth rate and a different chemical vapor deposition substrate temperature, where diamond layer A is deposited at the diamond growth rate and substrate temperature greater than the diamond growth rate and substrate temperature used to deposit diamond layer B, wherein the substrate temperature for depositing diamond layer A is between 900°
-1000°
C. and the substrate temperature for depositing diamond layer B is between 700°
-850°
C., said substrate temperature being a temperature of a substrate in a chemical vapor deposition chamber used as a surface for depositing the diamond film, and said diamond film plane being the same plane as a surface of the substrate that said diamond film is deposited on in the chemical vapor deposition chamber, and diamond layer A being up to fifty times as thick as diamond layer B and diamond layer B being up to twenty percent as thick as diamond layer A. - View Dependent Claims (2, 3, 4, 5)
- a thermal conducting diamond layer A having thermal conductivity in a direction perpendicular to a diamond film plane greater than thermal conductivity in a direction parallel to the diamond film plane, and a thermal conducting diamond layer B having thermal conductivity in the direction perpendicular to the diamond film plane equal to thermal conductivity in the direction parallel to the diamond film plane, with thermal conductivity in diamond layer A and diamond layer B respectively controlled by a different diamond growth rate and a different chemical vapor deposition substrate temperature, where diamond layer A is deposited at the diamond growth rate and substrate temperature greater than the diamond growth rate and substrate temperature used to deposit diamond layer B, wherein the substrate temperature for depositing diamond layer A is between 900°
Specification