Burst EDO memory device
First Claim
1. A memory device having a plurality of memory elements, each of the elements having an associated address, the memory device further comprising:
- addressing circuitry adapted to receive at least a first portion of an address from a source external to the memory device in response to a transition of an address strobe signal, and further adapted to advance the address in a predetermined address sequence in response to a subsequent transition of the address strobe signal; and
output buffer circuitry adapted to drive data from the memory device only after a plurality of transitions of the address strobe signal in a burst read access.
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Accused Products
Abstract
An integrated circuit memory device is designed for high speed data access and for compatibility with existing memory systems. An address strobe signal is used to latch a first address. During a burst access cycle the address is incremented internal to the device with additional address strobe transitions. A new memory address is only required at the beginning of each burst access. Read/Write commands are issued once per burst access eliminating the need to toggle the Read/Write control line at the device cycle frequency. Transitions of the Read/Write control line during a burst access will terminate the burst access, reset the burst length counter and initialize the device for another burst access. The device is compatible with existing Extended Data Out DRAM device pinouts, Fast Page Mode and Extended Data Out Single In-Line Memory Module pinouts, and other memory circuit designs.
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Citations
49 Claims
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1. A memory device having a plurality of memory elements, each of the elements having an associated address, the memory device further comprising:
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addressing circuitry adapted to receive at least a first portion of an address from a source external to the memory device in response to a transition of an address strobe signal, and further adapted to advance the address in a predetermined address sequence in response to a subsequent transition of the address strobe signal; and output buffer circuitry adapted to drive data from the memory device only after a plurality of transitions of the address strobe signal in a burst read access. - View Dependent Claims (2, 3)
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4. A memory device having a plurality of memory elements, each of the elements having an associated address, the memory device further comprising:
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addressing circuitry adapted to provide a series of addresses in a burst mode of operation; and a write enable signal node for receiving a write enable signal which is adapted to select between read and write cycles of the memory device, wherein a burst access of the memory device is terminated in response to a transition of the write enable signal.
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5. A memory device having an address latch node for receiving an address strobe signal, an address latch for receiving at least a portion of a first memory address and an array of memory elements, the memory device comprising:
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an address generating circuit responsive to the address strobe signal and to an output of the address latch for generating a second memory address, wherein the second memory address is used to access the array; and an output circuit in electrical communication with the address latch node for driving data received from the array, out of the memory device after a plurality of transitions of the address strobe signal. - View Dependent Claims (6, 7, 8, 9, 10, 11)
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12. A memory device having an address strobe signal node for receiving an address strobe signal and an array of memory elements, the memory device comprising:
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an address latch responsive to a first transition of the address strobe signal to latch at least a portion of a first initial memory address into the memory device; an address generating circuit adapted to generate a series of burst addresses which are determinable from the first initial memory address, wherein each of the burst addresses is generated in response to a corresponding transition of the address strobe signal; and a control circuit in electrical communication with said address latch and the address strobe signal node for enabling said address latch to latch at least a portion of a second initial address into the memory device in response to the address strobe signal after a predetermined number of burst access cycles have occurred. - View Dependent Claims (13, 14)
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15. A memory device having a plurality of data nodes for receiving and driving a plurality of data signals, an array of memory elements, and a plurality of address nodes for receiving a row and a column address, the memory device comprising:
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a row address strobe node for receiving a row address strobe signal for latching the row address in the memory device; a write control signal node for receiving a write control signal for selecting between read and write accesses of the memory device; and first and second column address strobe nodes for receiving first and second column address strobe signals, wherein either of said first and second column address strobe signals latch the column address, and either of said first and second column address strobe signals being active during a read access of the memory device will enable data to be driven on each of the data nodes, and only a first plurality of the data signals will be stored in the array in response to said write control signal selecting a write access and said first column address strobe node being active and said second column address strobe node being inactive.
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16. A memory device having an array of memory elements, in which a row address has been selected, comprising:
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a means of selecting a first column address and accessing an element of the array of memory elements at the row and first column address, in response to a transition of a column address strobe signal; and a means for modifying the first column address within the memory device to provide a second column address and for accessing a further element of the array, in response to the column address strobe signal; an output buffer to provide output data from the memory device only after a plurality of transitions of the column address strobe signal in a burst read access; and a control circuit responsive to a write enable signal to terminate a burst access of the memory device. - View Dependent Claims (17, 18, 19, 20)
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21. A memory device having external nodes for receiving a plurality of signals consisting essentially of a column address strobe signal a cycle of which defines an access cycle period, a row address strobe signal, a write enable signal, an output enable signal, address signals, data signals and power supply signals, the memory device comprising:
means for performing a burst write access of a first plurality of memory elements in response to a first address and a first plurality of transitions of the column address strobe signal, and for performing a burst read access of a second plurality of memory elements in response to a second address and a second plurality of transitions of the column address strobe signal, wherein a transition of the write enable signal will terminate a burst access of the memory device. - View Dependent Claims (22)
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23. A method of reading data from a memory device having an address latch, an address counter, an address strobe node for receiving a column address strobe, an output data driver and an array of memory elements, the method comprising:
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applying a first column address strobe to the address strobe node for latching a first column address; accessing a first memory element of the array of memory elements at the first column address; applying a second column address strobe to the address strobe node for advancing the column address within the memory device to specify a second column address; accessing a second memory element of the array of memory elements at the second column address; switching data driven to an external data node from a logic low level to a logic high level in response to a single transition of the column address strobe; and maintaining a high impedance state on the output data driver at least until said step of applying the second column address strobe. - View Dependent Claims (24, 25)
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26. A method of terminating a burst access of a memory device having an array of memory elements, an address generation circuit for providing a plurality of addresses for accessing the array, and a read and write cycle input node for receiving a write enable signal, the method comprising:
toggling the write enable signal during the burst access. - View Dependent Claims (27)
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28. A Single In Line Memory Module comprising:
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a memory device having an array of memory elements, each of the memory elements having an associated address; a plurality of address lines coupled to said memory device; and an address strobe signal line electrically coupled to said memory device, wherein said memory device is responsive to an address strobe signal received on said address strobe signal line to latch an address within said memory device from said plurality of address lines, and said memory device is responsive to a transition of the address strobe signal received on said address strobe signal line to advance the address within said memory device in a predetermined sequence. - View Dependent Claims (29, 30, 31, 32, 33)
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34. A Memory Module comprising:
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a memory device; a plurality of address signal lines coupled to said memory device to provide an address to said memory device; an address strobe signal line coupled to said memory device; and an address generation circuit within said memory device, coupled to said address strobe signal line, for receiving and advancing the address, to provide multiple data accesses of said memory device in synchronization with multiple transitions of an address strobe signal on said address strobe signal line after only one address is received. - View Dependent Claims (35, 36, 37)
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38. A computer system which is capable of rapid storage and retrieval of data, comprising:
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a microprocessor; and a memory circuit adapted to store and retrieve data in a burst access in response to a memory address received from said microprocessor and in response to an address strobe signal, wherein said memory circuit is adapted to latch the memory address and perform a first memory access in response to a first transition of the address strobe signal within the burst access and is further adapted to generate an additional memory address and perform a memory access cycle in response to each of a plurality of additional transitions of the address strobe signal within a burst access. - View Dependent Claims (39, 40, 41)
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42. A computer system comprising:
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a microprocessor that provides an address; and a memory device containing data at a location corresponding to the address, said memory providing burst access in response to the address, wherein burst access comprises; a plurality of periods, a column address strobe signal being received by said memory each period; a column address portion, of the address, being received by said memory device only in a first period of the plurality of periods in response to the column address strobe signal; and the data at the location corresponding to the address is provided at an output of said memory device after at least two periods. - View Dependent Claims (43, 44)
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45. A computer system which is capable of rapid storage and retrieval of data, comprising:
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a microprocessor; and a burst extended data out memory device to store and retrieve data in a burst access in response to a memory address received from said microprocessor and in response to an address strobe signal, whereby said burst extended data out memory device is operative to latch the memory address and perform a first memory access in response to a first transition of the address strobe signal within the burst access and is further operative to generate an additional memory address and perform a memory access cycle in response to each of a plurality of additional transitions of the address strobe signal within the burst access. - View Dependent Claims (46)
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47. A burst access memory device comprising:
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an array of memory elements; a column addressing circuit coupled to said array of memory elements, responsive to a column address strobe signal to generate a series of column addresses in a burst access of the memory device;
wherein the burst access memory device is responsive to a transition of a write cycle control signal to terminate the burst access. - View Dependent Claims (48, 49)
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Specification