Method for making a silicon field emission emitter
First Claim
1. A method for making a silicon filed emission emitter comprising the steps of:
- forming a thermal oxide mask on a surface of a doped silicon substrate by photo etching after oxidation of the substrate;
etching the silicon substrate to form a cone-shaped emitter having a planar tip by using said thermal oxide mask;
sharpening the planar tip of said emitter by forming a thin thermal oxide film on the silicon substrate serving as an insulating layer;
depositing a gate metal onto an upper surface of the mask and onto the upper surface of said insulating layer, wherein the gate metal extends along the upper surface to a wall portion of said emitter to form a gate electrode, and wherein the mask and the emitter are not completely encapsulated by the gate metal; and
wet etching the insulating layer to expose the tip of the cone-shaped emitter.
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Abstract
There is disclosed a silicon field emission emitter and a method for making a silicon field emission emitter which has a good electronic characteristic and a simplified making process. The silicon field emission emitter in accordance with the embodiment of the present invention includes a silicon substrate of high density, an insulating layer on the silicon substrate of high density, a cavity formed in the insulating layer, an emitter formed with the silicon substrate of high density in a body in the cavity, and a gate electrode formed on the insulating layer. The insulating layer is made of the thermal oxide film having the thickness of 4000 angstroms and the gate electrode coats the emitter tip.
27 Citations
3 Claims
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1. A method for making a silicon filed emission emitter comprising the steps of:
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forming a thermal oxide mask on a surface of a doped silicon substrate by photo etching after oxidation of the substrate; etching the silicon substrate to form a cone-shaped emitter having a planar tip by using said thermal oxide mask; sharpening the planar tip of said emitter by forming a thin thermal oxide film on the silicon substrate serving as an insulating layer; depositing a gate metal onto an upper surface of the mask and onto the upper surface of said insulating layer, wherein the gate metal extends along the upper surface to a wall portion of said emitter to form a gate electrode, and wherein the mask and the emitter are not completely encapsulated by the gate metal; and wet etching the insulating layer to expose the tip of the cone-shaped emitter. - View Dependent Claims (2, 3)
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Specification
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- Resources
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Current AssigneeSamsung Display Devices Co., Ltd. (Samsung SDI Company Limited)
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Original AssigneeSamsung Display Devices Co., Ltd. (Samsung SDI Company Limited)
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InventorsLee, Kang-ok, Lee, Cheon-kyu
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Primary Examiner(s)Breneman, R. Bruce
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Assistant Examiner(s)WHIPPLE, MATTHEW LAVERNE
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Application NumberUS08/163,818Time in Patent Office923 DaysField of Search437/225, 437/228, 156/643, 445/50, 445/58US Class Current438/20CPC Class CodesH01J 1/3042 microengineered, e.g. Spind...H01J 9/025 of field emission cathodes
