Deposited film forming apparatus

• US 5,527,396 A
• Filed: 03/03/1995
• Issued: 06/18/1996
• Est. Priority Date: 06/30/1992
• Status: Expired due to Fees

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Niwa, Mitsuyuki, Kouda, Yuzou, Hayashi, Ryou, Sano, Masafumi, Aoike, Tatsuyuki, Kariya, Toshimitsu, Matsuyama, Jinsho, Tonogaki, Masahiko, Saitoh, Keishi
• Primary Examiner(s): Breneman, R. Bruce
• Assistant Examiner(s): CHANG, JONI YUK YING
• Application Number:
  US08/398,071
• Time in Patent Office: 473 Days
• Field of Search: 118/718, 118/723 MP, 118/723 ME, 118/723 M, 118/723 E, 118/723 ER, 156/345, 204/298.38, 204/298.29, 315/111.21, 313/231.31
• US Class Current: 118/723.0MP
• CPC Class Codes: C23C 16/517 using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
• CPC Class Codes: G03G 5/08264 comprising seven or more silicon-based layers
• CPC Class Codes: G03G 5/08278 Depositing methods
• CPC Class Codes: H01L 29/458 for thin film silicon, e.g. source or drain electrode
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 31/056 the light-reflecting means being of the back surface reflector [BSR] type
• CPC Class Codes: H01L 31/076 Multiple junction or tandem solar cells
• CPC Class Codes: H01L 31/202 including only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/204 including AIVBIV alloys, e.g. SiGe, SiC
• CPC Class Codes: H01L 31/206 Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
• CPC Class Codes: Y02E 10/52 PV systems with concentrators
• CPC Class Codes: Y02E 10/548 Amorphous silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

A method of quickly depositing a non-single-crystal semiconductor film and forming a silicon-type non-single-crystal photovoltaic device, and a method of continuously manufacturing the photovoltaic devices. By this method the deposited film is formed by decomposing a raw material gas with microwave energy which is lower than the microwave energy required to completely decompose the raw material gas. RF energy is applied at the same time which is higher in energy than the microwave energy. The microwave energy acts on the raw material gas at an internal pressure level of 50 mTorr or lower to form a uniform non-single-crystal semiconductor film with excellent electrical characteristics and reduced light deterioration.

Claims

1. A deposited film forming apparatus comprising;

raw material gas introducing means for introducing a raw material gas to a deposition chamber;

exhausting means for exhausting said deposition chamber to have a pressure of 50 m Torr or less during its film-forming;

microwave energy introducing means for inducing microwave energy on a substrate arranged in said deposition chamber so that said energy be equal to or less than the amount of energy for keeping deposition speed constant, even if said microwave energy is applied to said raw material gas and said applied energy is changed; and

RF energy introducing means for introducing RF energy, which should be higher than said microwave energy, to said deposition chamber at the same time when said microwave energy is introduced.

2. A deposited film forming apparatus according to claim 1, wherein said substrate is an elongated substrate member.

3. A deposited film forming apparatus according to claim 1, further comprising DC voltage applying means for applying DC voltage to said RF energy introducing means.

4. A deposited film forming apparatus according to claim 1, further comprising;

a conductive mesh interposed between a space where said raw material gas is decomposed by said microwave energy and said substrate; and

potential adjusting means for adjusting said conductive mesh to have the same potential as that of said substrate.