Preconditioner for a polishing pad and method for using the same

• US 5,527,424 A
• Filed: 01/30/1995
• Issued: 06/18/1996
• Est. Priority Date: 01/30/1995
• Status: Expired due to Term

• Current Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Mullins, James M.
• Primary Examiner(s): Breneman, R. Bruce
• Assistant Examiner(s): ALANKO, ANITA KAREN
• Application Number:
  US08/380,770
• Time in Patent Office: 505 Days
• Field of Search: 216/90, 216/91, 156/345, 156/636.1, 156/645.1, 451/56, 451/72, 451/443, 451/444
• US Class Current: 438/692
• CPC Class Codes: B24B 53/017 Devices or means for dressing, cleaning or otherwise conditioning lapping tools
• CPC Class Codes: Y10S 438/959 Mechanical polishing of wafer

Abstract

A preconditioning plate (10) prepares the surface of a polishing pad (24) to prepare the pad'"'"'s surface for subsequent metal polishing of semiconductor wafers (27). The preconditioning plate has at least three intersecting radial ridges (14) on its surface and is made from a rigid plastic material. The preconditioning plate is rotated relative to the surface of the polishing pad prior to actual polishing to provide a uniform and stable polishing surface. The preconditioning plate does not abrade or wear away the polishing pad, nor does it form grooves in the polishing pad. Additionally, the preconditioning plate is reusable.

Claims

1. A preconditioner for a mechanical polishing pad on a polishing system comprising:

a plate having at least three intersecting ridges on a surface of the plate, wherein the at least three intersecting ridges extend radially outward from a center of the plate, the plate being composed of a rigid and chemically neutral polymer.

2. The preconditioner of claim 1, wherein the plate is composed of a material selected from a group consisting of polyvinylidine fluoride and polymethyl methacrylate.

3. The preconditioner of claim 1, wherein the plate has a thickness approximately in a range of 3 to 12 millimeters.

4. The preconditioner of claim 1, wherein the ridges are triangular shaped and each has a chamfered ridge top such that it is flattened to prevent breakage by eliminating sharp edges.

5. The preconditioner of claim 1, wherein the ridges have a height approximately in a range of 1.5 to 5 millimeters.

6. The preconditioner of claim 1, wherein the ridges are formed by intersecting planes having a slope angle approximately in a range of 30°

to 60°

.

7. A method for polishing a semiconductor wafer, comprising the steps of:

providing a preconditioner having at least three intersecting ridges on a face of the preconditioner, wherein the at least three intersecting ridges extend radially outward from a center of the preconditioner, the preconditioner being composed of a rigid and chemically neutral polymer;

aligning the preconditioner, face down, over a polishing pad;

rotating the preconditioner, relative to the polishing pad, over a surface of the polishing pad to form a preconditioned polishing pad;

positioning a semiconductor wafer having a metal layer on its face, face down, overlying the preconditioned polishing pad; and

rotating the semiconductor wafer, relative to the preconditioned polishing pad to planarize the face of the semiconductor wafer.

8. The method of claim 7, wherein the step of providing the preconditioner is performed by providing a preconditioning disk composed of polyvinylidine fluoride.

9. The method of claim 7, wherein the step of providing the preconditioner is performed by providing a preconditioning disk composed of polymethyl methacrylate.

10. The method of claim 7, wherein the step of rotating the preconditioner is performed for approximately five minutes.

11. The method of claim 7, wherein the step of positioning the semiconductor wafer comprises positioning a wafer having a tungsten layer on its face.

12. The method of claim 7, wherein the step of providing the preconditioner is performed by providing a plastic disk having ridges which are triangular shaped, wherein each ridge has a chamfered ridge top such that it is flattened to prevent breakage by eliminating sharp edges.

13. The method of claim 7, wherein step of providing the preconditioner is performed by providing a plastic disk having triangular ridges having sidewall slope angles approximately in a range of 30°

to 60°

.

14. A method for polishing a semiconductor wafer, comprising the steps of:

providing a preconditioner having at least three intersecting radial ridges on a face of the preconditioner, wherein the at least three intersecting radial ridges symmetrically divide the face of the preconditioner into a plurality of sectors, the preconditioner being composed of a rigid and chemically neutral polymer;

aligning the preconditioner, face down, over a polishing pad;

rotating the preconditioner, relative to the polishing pad, over a surface of the polishing pad to form a preconditioned polishing pad;

positioning a semiconductor wafer having a metal layer on its face, face down, overlying the preconditioned polishing pad; and

rotating the semiconductor ,safer, relative to the preconditioned polishing pad to planarize the face of the semiconductor wafer.

15. The method of claim 14, wherein the step of providing the preconditioner is performed by providing a preconditioning disk composed of polymethyl methacrylate.

16. The method of claim 14, wherein the step of providing the preconditioner is performed by providing a preconditioning disk composed of polyvinylidine fluoride.

17. The method of claim 16, wherein the step of rotating the preconditioner is performed for approximately five minutes.

18. The method of claim 16, wherein the step of providing the preconditioning disk provides said disk having triangular ridges, wherein each triangular ridge has a chamfered ridge top such that it is flattened to eliminate sharp edges.

19. The method of claim 18, wherein step of providing the preconditioning disk having triangular ridges provides said disk having ridge sidewalls which are sloped at approximately 30°

to 60°

.

20. The method of claim 19, wherein the step of providing the preconditioning disk provides said disk having a thickness approximately 3 to 12 millimeters and wherein said ridges on the face of the disk have a height measuring approximately 1.5 to 5 millimeters.