Method for filing substrate recesses using elevated temperature and pressure

• US 5,527,561 A
• Filed: 08/16/1994
• Issued: 06/18/1996
• Est. Priority Date: 05/28/1991
• Status: Expired due to Term

• Current Assignee: Aviza Technology Limted (KLA Corporation)
• Original Assignee: Electrotech Limited (Plasma & Materials Technologies, Inc.)
• Inventors: Dobson, Christopher D.
• Primary Examiner(s): Lusignan, Michael
• Assistant Examiner(s): MAIORANA, DAVID MICHAEL
• Application Number:
  US08/291,575
• Time in Patent Office: 672 Days
• Field of Search: 427/97, 427/123, 427/124, 427/376.7, 427/383.3, 427/397.7, 427/419.7
• US Class Current: 427/383.3
• CPC Class Codes: H01L 21/3105 After-treatment
• CPC Class Codes: H01L 21/32115 Planarisation
• CPC Class Codes: H01L 21/67167 surrounding a central transfer chamber
• CPC Class Codes: H01L 21/67207 comprising a chamber adapted to a particular process
• CPC Class Codes: H01L 21/76819 Smoothing of the dielectric planarisation of insulating materials per se H01L21/31051
• CPC Class Codes: H01L 21/76841 Barrier, adhesion or liner layers
• CPC Class Codes: H01L 21/76882 Reflowing or applying of pressure to better fill the contact hole
• CPC Class Codes: H05K 2201/0355 Metal foils
• CPC Class Codes: H05K 2203/0278 Flat pressure, e.g. for connecting terminals with anisotropic conductive adhesive
• CPC Class Codes: H05K 2203/1105 Heating or thermal processing not related to soldering, firing, curing or laminating, e.g. for shaping the substrate or during finish plating
• CPC Class Codes: H05K 3/4084 by deforming at least one of the conductive layers

Abstract

To fill a hole or trench structure in an article, such as a semiconductor wafer, a layer is formed on the article. The layer extends over the structure so as to seal the mouth thereof. Then, the wafer and layer are subject to elevated pressure and elevated temperature such as to cause material of the layer to flow into the structure.

Claims

1. A method of processing a semiconductor wafer having a surface layer having an exposed surface and at least a part of said surface layer having a multiplicity of recesses therein, the method comprising:

depositing a further layer on the exposed surface of at least said part of said surface layer without any melting of said further layer, the depositing of said further layer continuing at least until said further layer extends over all the recesses to close completely the openings of all of said recesses in the exposed surface;

halting the depositing of said further layer; and

subsequently subjecting said wafer and said further layer to elevated pressure and an elevated temperature sufficient to cause parts of said further layer to deform, without melting, to fill respective recesses;

wherein the elevated temperature to which said further layer is subjected is significantly below the melting point of said further layer and is sufficient to decrease the yield strength of the material of said further layer to allow filling deformation.

2. A method as claimed in claim 1, wherein said further layer is one of an aluminum and an aluminum alloy.

3. A method as claimed in claim 2, wherein the elevated temperature to which said further layer is subjected is less than 500°

C.

4. A method as claimed in claim 3, wherein the elevated temperature to which said further layer is subjected is in excess of 400°

C.