Method of manufacturing a capacitor having metal electrodes
First Claim
1. A method of manufacturing a semiconductor device comprising the steps of:
- forming an insulation layer, a first metal layer, a dielectric film, and a second metal layer on a substrate having circuit elements formed thereon;
dry etching said second metal layer and said dielectric film to form a top electrode and a capacitance insulation film, wherein at least this dry etching step is performed using mixed gas containing hydrogen halide and oxygen; and
dry etching said first metal layer to form a bottom electrode after dry etching said second metal layer and said dielectric film.
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Accused Products
Abstract
On a silicon substrate, a silicon oxide layer, a first platinum layer, a dielectric film and a second platinum layer are formed, and then the second platinum layer and the dielectric film are dry etched, via a resist layer, in a 1-5 Pa low pressure region with a mixed gas of HBr and O2 as the etching gas. As soon as the first platinum layer is exposed, the unetched portion of dielectric film is etched off in a 5-50 Pa high pressure region, and then the first platinum layer is dry etched again in the low pressure region to form a capacitor consisting of a top electrode, a capacitance insulation layer and a bottom electrode in a semiconductor integrated circuit chip. Using this manufacturing method prevents the deterioration in definition caused by the use of a thick resist and the operation failure of circuit elements such as transistors due to over etching on the insulation layer.
26 Citations
3 Claims
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1. A method of manufacturing a semiconductor device comprising the steps of:
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forming an insulation layer, a first metal layer, a dielectric film, and a second metal layer on a substrate having circuit elements formed thereon; dry etching said second metal layer and said dielectric film to form a top electrode and a capacitance insulation film, wherein at least this dry etching step is performed using mixed gas containing hydrogen halide and oxygen; and dry etching said first metal layer to form a bottom electrode after dry etching said second metal layer and said dielectric film. - View Dependent Claims (2, 3)
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Specification
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- Resources
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Current AssigneeRPX Corporation
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Original AssigneeMatsushita Electric Corporation (Panasonic Holdings Corporation)
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InventorsIzutsu, Yasufumi, Matsumoto, Shoji, Nagano, Yoshihisa, Shimada, Yasuhiro
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Primary Examiner(s)Chaudhuri, Olik
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Assistant Examiner(s)TSAI, H JEY
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Application NumberUS08/412,563Time in Patent Office447 DaysField of Search437/47, 437/52, 437/48, 437/60, 437/919, 437/245, 156/652.1, 156/650.1, 156/643.1, 365/145, 148/DIG. 14US Class Current438/396CPC Class CodesH01L 28/40 Capacitors
