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Selective formation of low-density, low-dielectric-constant insulators in narrow gaps for line-to-line capacitance reduction

  • US 5,527,737 A
  • Filed: 05/27/1994
  • Issued: 06/18/1996
  • Est. Priority Date: 05/27/1994
  • Status: Expired due to Term
First Claim
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1. A method of making an interconnect layer in a semiconductor device with a reduction in line-to-line capacitance, comprising:

  • a. forming interconnect lines on a semiconductor body with a first and a second of said lines being spaced at less than one and one-half line width and with a third line being spaced from said second line by at least three line widths;

    b. coating a dielectric layer over the semiconductor body and the plurality of interconnect lines;

    c. baking said dielectric layer; and

    d. curing said dielectric layer at an elevated temperature to form a dielectric between said first and second lines which is less dense than said dielectric between said second and third line and in which said dielectric between said first and said second lines has a dielectric constant of less than 3.7.

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