High-density DRAM structure on soi

• US 5,528,062 A
• Filed: 06/17/1992
• Issued: 06/18/1996
• Est. Priority Date: 06/17/1992
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Hsu, Louis L. C., Ogura, Seiki, Hsieh, Chang-Ming
• Primary Examiner(s): Meier, Stephen D.
• Application Number:
  US07/900,041
• Time in Patent Office: 1,462 Days
• Field of Search: 257/298, 257/301, 257/300
• US Class Current: 257/298
• CPC Class Codes: H10B 12/34 the transistor being at least partially in a trench in the substrate
• CPC Class Codes: H10B 12/37 the capacitor being at least partially in a trench in the substrate

Abstract

A high density, DRAM cell array with a very short channel, vertical gate transfer transistor that can be manufactured using conventional photolithography process steps. The conventional four-by-four DRAM array shown schematically in FIG. 1a is rearranged to the shared-gate, double-bit array shown schematically in FIG. 1b. Trench storage capacitors and vertical FET transistors are arranged in pairs with a common vertical gate and a common substrate, allowing both bit and substrate contacts to be shared by adjacent cells.

Claims

1. An integrated circuit cell for dynamic random access memories, comprising in combination:

a silicon-on-oxide wafer comprised of an oxide layer on a surface of an underlying support wafer and a patterned silicon source layer on a surface of said oxide layer;

a capacitor trench extending through said silicon source layer and said oxide layer and into said underlying support wafer;

a first capacitor plate layer formed conformally on a wall of said capacitor trench, said first capacitor plate layer extending to and connected with said patterned silicon source layer;

a capacitor dielectric layer formed on said first capacitor plate layer;

a silicon channel layer formed conformally over said capacitor dielectric layer and overlying a region of said patterned silicon source layer, said silicon channel layer forming a second capacitor plate as well as a channel layer;

a polysilicon drain layer overlying said silicon channel layer in said region where said silicon channel layer overlays said silicon source layer;

a vertical opening extending through said silicon source layer, said silicon channel layer, and said polysilicon drain layer, said opening forming a wall surface in a region where the layers overlay one another, said wall surface comprising an edge surface of in each layer respectively aligned vertically along said wall surface;

a gate dielectric covering said wall surface; and

a vertical gate in said opening in contact with said gate dielectric.

2. An integrated circuit cell for dynamic random access memories as in claim 1, further including an isolation dielectric layer formed on the wall of said capacitor trench.

3. An integrated circuit cell for dynamic random access memories as in claim 1, wherein said capacitor dielectric layer is an oxide-nitride composite.

4. As integrated circuit cell for dynamic random access memories as in claim 1, wherein said capacitor dielectric layer is an oxide.

5. An integrated circuit cell for dynamic random access memories as in claim 1, wherein said gate dielectric is an oxide-nitride composite.

6. An integrated circuit cell for dynamic random access memories as in claim 1, wherein said gate dielectric is an oxide.

7. An integrated circuit cell for dynamic random access memories as in claim 1, further including:

a substrate contact region in said epitaxial silicon layer; and

a bit-line contact region in said polysilicon drain layer.

8. An integrated circuit cell for dynamic random access memories as in claim 1, wherein said silicon channel layer is a low temperature epitaxially grown layer.

9. An integrated circuit cell for dynamic random access memories as in claim 1, wherein said silicon channel is a solid-phase recrystallized amorphous silicon.

10. An integrated circuit cell for dynamic random access memories as in claim 1, wherein said first capacitor plate layer is a polysilicon layer.

11. An integrated circuit cell for dynamic random access memories as in claim 1, wherein said first capacitor plate layer is an amorphous silicon layer.

12. A pair of integrated circuit, shared gate, cells for dynamic random access memories, comprising in combination:

a silicon-on-oxide wafer comprised of an oxide layer on the upper surface of an underlying support wafer and a silicon source layer on the upper surface of said oxide layer;

a pair of capacitor trenches extending through said silicon source layer and said oxide layer and into said underlying support wafer;

a first capacitor plate layer formed conformally on the wall of each of said pair of said capacitor trenches over said isolation oxide, said capacitor plate layer extending to and connected with said silicon source layer;

a capacitor dielectric layer formed on said polysilicon capacitor plate layer;

a silicon channel layer formed conformally over said capacitor dielectric layer and overlying a region of said silicon source layer, said silicon layer forming a second capacitor plate and a channel layer;

a polysilicon drain layer overlying said silicon channel layer in said region where said silicon channel layer overlays said silicon source layer;

a vertical opening extending through silicon source layer, said silicon channel layer, and said polysilicon drain layer forming a pair of facing vertical wall surfaces in the region where the layers overlay one another with an edge in each layer respectively aligned vertically along said pair of facing vertical wall surfaces;

said silicon channel layer extending from one of said facing wall surfaces forming the channel layer and the second capacitor plate layer for one cell of said pair of integrated circuit cells and said silicon channel layer extending from the other of said facing wall surfaces forming the channel layer and the second capacitor plate layer for the other cell of said pair of integrated circuit cells;

a gate dielectric covering said pair of facing vertical wall surfaces; and

a vertical gate in said opening in contact with said gate dielectric.

13. A pair of integrated circuit, shared gate, cells for dynamic random access memories as in claim 12, further including:

a substrate contact region in said silicon channel layer common to said pair of integrated circuit cells; and

a bit-line contact region in said polysilicon drain layer extending from said one of said facing wall surfaces.

14. A pair of integrated circuit, shared gate, cells for dynamic random access memories as in claim 13, including:

a substrate contract region in said silicon substrate layer; and

a bit-line contact region in said polysilicon drain layer.

15. A pair of integrated circuit, shared gate, cells for dynamic random access memories as in claim 13, including an isolation dielectric on the wall of said capacitor trench.

16. A pair of integrated circuit, shared gate, cells for dynamic random access memories as in claim 13, wherein said silicon source layer is formed by low temperature epitaxial growth.

17. A pair of integrated circuit, shared gate, cells for dynamic random access memories as in claim 13, wherein said silicon source layer is formed by epitaxial lateral overgrowth.

18. A pair of integrated circuit, shared gate, cells for dynamic random access memories as in claim 13, wherein said silicon source layer is formed by solid-phase recrystallization of amorphous silicon.

19. A pair of integrated circuit, shared gate, cells for dynamic random access memories as in claim 12, wherein said silicon channel layer is a low temperature epitaxially grown layer.

20. A pair of integrated circuit, shared gate, cells for dynamic random access memories as in claim 12, wherein said silicon channel is a solid-phase recrystallized amorphous silicon.