Semiconductor sensor manufactured through anodic-bonding process

• US 5,528,070 A
• Filed: 10/06/1994
• Issued: 06/18/1996
• Est. Priority Date: 10/26/1993
• Status: Expired due to Fees

• Current Assignee: Yazaki Meter Company Limited (Yazaki Corporation)
• Original Assignee: Yazaki Meter Company Limited (Yazaki Corporation)
• Inventors: Cahill, Sean S.
• Primary Examiner(s): Jackson, Jerome
• Assistant Examiner(s): CLARK, JASMINE JHIHAN B
• Application Number:
  US08/321,829
• Time in Patent Office: 621 Days
• Field of Search: 257/419, 257/418, 257/417, 257/619, 257/632, 73/724, 73/723
• US Class Current: 257/419
• CPC Class Codes: G01L 9/0042 Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively
• CPC Class Codes: G01L 9/0073 using a semiconductive diaphragm

Abstract

A semiconductor sensor comprising a semiconductor substrate and a glass substrate. The semiconductor substrate includes a support member having an opening centrally defined therein, a diaphragm positioned in the opening of the support member, and a flexible supporting means for supporting and coupling the diaphragm and the support member. The glass substrate includes a portion facing the diaphragm and the supporting means and at least one recess defined in this portion which faces the entirety of the supporting means. The glass substrate also includes a metal layer deposited on a surface of the glass substrate and a dielectric layer deposited on the metal layer such that the dielectric layer faces the diaphragm.

Claims

1. A semiconductor sensor comprising:

a semiconductor substrate including;

a support member having an opening centrally defined therein;

a diaphragm positioned in the opening of the support member;

a flexible supporting means for supporting and coupling the diaphragm with the support member, wherein said flexible supporting means is more flexible than said diaphragm;

a glass substrate having a portion facing said diaphragm and said flexible supporting means and at least one recess defined in said portion in such a manner that said at least one recess faces the entirety of said flexible supporting means, the glass substrate having a through hole and including;

a metal layer deposited on a surface of the glass substrate;

a dielectric layer deposited on the metal layer, the dielectric layer facing the diaphragm, wherein said recess and said dielectric layer prevent said diaphragm and said flexible supporting means from bonding to said glass substrate during an anodic-bonding process.

2. A semiconductor sensor as claimed in claim 1, wherein the flexible supporting means includes a corrugation member.

3. A semiconductor sensor as claimed in claim 1, wherein said recess is annular.

4. A semiconductor sensor as claimed in claim 1, further comprising a plurality of holes formed in the glass substrate, wherein said metal layer is further deposited on inner surfaces of the holes.

5. A semiconductor sensor as claimed in claim 2, wherein said corrugation member is annular.