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Semiconductor sensor manufactured through anodic-bonding process

  • US 5,528,070 A
  • Filed: 10/06/1994
  • Issued: 06/18/1996
  • Est. Priority Date: 10/26/1993
  • Status: Expired due to Fees
First Claim
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1. A semiconductor sensor comprising:

  • a semiconductor substrate including;

    a support member having an opening centrally defined therein;

    a diaphragm positioned in the opening of the support member;

    a flexible supporting means for supporting and coupling the diaphragm with the support member, wherein said flexible supporting means is more flexible than said diaphragm;

    a glass substrate having a portion facing said diaphragm and said flexible supporting means and at least one recess defined in said portion in such a manner that said at least one recess faces the entirety of said flexible supporting means, the glass substrate having a through hole and including;

    a metal layer deposited on a surface of the glass substrate;

    a dielectric layer deposited on the metal layer, the dielectric layer facing the diaphragm, wherein said recess and said dielectric layer prevent said diaphragm and said flexible supporting means from bonding to said glass substrate during an anodic-bonding process.

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