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Method for non-destructive, non-contact measurement of dielectric constant of thin films

  • US 5,528,153 A
  • Filed: 11/07/1994
  • Issued: 06/18/1996
  • Est. Priority Date: 11/07/1994
  • Status: Expired due to Term
First Claim
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1. A method for non-contact, non-destructive measuring of the dielectric constant of a thin film on a semiconductor wafer comprising the steps of:

  • (a) measuring a first characteristic of said wafer using a capacitance measuring tool;

    (b) depositing a thin film of a dielectric material on said wafer;

    (c) measuring said first characteristic of said wafer with said thin film deposited thereon using a capacitance measuring tool;

    (d) measuring the true thickness of said thin film; and

    (e) forming a ratio of said measurement in step c minus the measurement in step a divided by the measurement in step d and deriving the dielectric constant for said deposited thin film from a calibrated table as a function of said ratio.

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