×

Nonvolatile semiconductor memories with a cell structure suitable for a high speed operation and a low power supply voltage

  • US 5,528,537 A
  • Filed: 07/21/1995
  • Issued: 06/18/1996
  • Est. Priority Date: 03/31/1993
  • Status: Expired due to Term
First Claim
Patent Images

1. A NAND type nonvolatile semiconductor memory, comprising:

  • a plurality of bit lines;

    a plurality of NAND type unit memory cells for storing memory data, each said plurality of NAND type unit memory cells including at least one memory transistor for selectively accessing desired memory data, wherein;

    said plurality of NAND type unit memory cells being arranged in a plurality of strings, each of said plurality of strings including a subplurality of said plurality of NAND type unit memory cells,each of said plurality of bit lines being connected to at least two of said plurality of strings, andsaid plurality of bit lines beingarranged into a plurality of blocks;

    a plurality of string select transistors including at least one depletion mode transistor connected to each of said plurality of strings, said plurality of string select transistors selecting one of said at least two of said plurality of strings connected to each of said plurality of bit lines in response to a string select signal; and

    a plurality of block select transistors connected respectively to each of said plurality of strings for selecting a respective one of said plurality of blocks in response to a block select signal.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×