Plasma processing apparatus
First Claim
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1. A plasma processing apparatus comprising:
- a chamber having a gas inlet port and a gas discharge port;
supporting means, disposed in said chamber, for supporting an object to be processed which has a surface to be processed;
a flat coil provided to oppose the surface to be processed of the object which is supported by said supporting means, with a gap therebetween;
RF power supply means for supplying an RF current to said coil, thereby generating a plasma in said chamber between said coil and said supporting means; and
directing means, provided to said supporting means to surround the object to be processed, and having a projecting portion projecting toward said coil past the surface to be processed of the object to be processed, and including an electrical insulator or a high resistance, for focussing the plasma in a direction substantially parallel to the surface of the object to be processed;
wherein said directing means has an outer annular member consisting of an electrical insulator or a high ohmic resistance, and an inner annular member arranged between said outer annular member and the object to be processed and consisting of a conductor.
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Abstract
A plasma processing apparatus includes a chamber provided with a susceptor therein for supporting a wafer. A flat coil antenna is mounted on an outer surface of an insulating wall of the chamber to face the wafer. An RF current is supplied to the coil, thereby generating a plasma in the chamber between the coil and the wafer. A focus ring is provided on the susceptor to surround the wafer, which has a projecting portion projecting toward the coil past the surface of the wafer, and consists of an electrical insulator or a high resistor, for directing the plasma generated between the projecting portion and the coil in a direction substantially parallel to the surface of the wafer.
297 Citations
15 Claims
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1. A plasma processing apparatus comprising:
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a chamber having a gas inlet port and a gas discharge port; supporting means, disposed in said chamber, for supporting an object to be processed which has a surface to be processed; a flat coil provided to oppose the surface to be processed of the object which is supported by said supporting means, with a gap therebetween; RF power supply means for supplying an RF current to said coil, thereby generating a plasma in said chamber between said coil and said supporting means; and directing means, provided to said supporting means to surround the object to be processed, and having a projecting portion projecting toward said coil past the surface to be processed of the object to be processed, and including an electrical insulator or a high resistance, for focussing the plasma in a direction substantially parallel to the surface of the object to be processed; wherein said directing means has an outer annular member consisting of an electrical insulator or a high ohmic resistance, and an inner annular member arranged between said outer annular member and the object to be processed and consisting of a conductor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A plasma processing apparatus comprising:
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a chamber having a gas inlet port and a gas discharge port; supporting means, disposed in said chamber, for supporting an object to be processed which has a surface to be processed; a flat coil provided to oppose the surface to be processed of the object which is supported by said supporting means, with a gap therebetween; RF power supply means for supplying an RF current to said coil, thereby generating a plasma in said chamber between said coil and said supporting means; and directing means, provided to said supporting means to surround the object to be processed, and having a projecting portion projecting toward said coil past the surface to be processed of the object to be processed for focussing the plasma in a direction substantially parallel to the surface of the object to be processed; wherein said directing means has an annular plasma focus ring consisting of an electrical insulator or a high ohmic resistance; wherein said focus ring has a projecting surface which forms a step farther from said coil as it is closer to the object to be processed. - View Dependent Claims (13)
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14. A plasma processing apparatus comprising:
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a chamber having a gas inlet port and a gas discharge port; supporting means, disposed in said chamber, for supporting an object to be processed which has a surface to be processed; a flat coil provided to oppose the surface to be processed of the object which is supported by said supporting means, with a gap therebetween; RF power supply means for supplying an RF current to said coil, thereby generating a plasma in said chamber between said coil and said supporting means; and directing means, provided to said supporting means to surround the object to be processed, and having a protecting portion projecting toward said coil past the surface to be processed of the object to be processed for focussing the plasma in a direction substantially parallel to the surface of the object to be processed; wherein said directing means has an annular plasma focus ring consisting of an electrical insulator or a high ohmic resistance; wherein said focus ring has a projecting surface which forms a curved contour; wherein said curved contour of said projecting surface of said focus ring has a lower surface which is farther away from said coil as it is closer to the object to be processed, and an upper surface extending from said lower surface toward said coil.
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15. A plasma processing apparatus comprising:
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a chamber having a gas inlet port and a gas discharge port; supporting means, disposed in said chamber, for supporting an object to be processed which has a surface to be processed; an electrode provided to oppose the surface to be processed of the object which is supported by said supporting means, with a gap therebetween; RF power supply means for supplying an RF current to said electrode, thereby generating a plasma in said chamber between said electrode and said supporting means; and directing means, provided to said supporting means to surround the object to be processed, and having a projecting portion projecting toward said electrode past the surface to be processed of the object to be processed for focussing the plasma in a direction substantially parallel to the surface of the object to be processed; wherein said directing means has an outer annular member consisting of an electrical insulator or a high ohmic resistance, and an inner annular member arranged between said outer annular member and the object to be processed and consisting of a conductor.
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Specification