Method of depositing conductors in high aspect ratio apertures under high temperature conditions

• US 5,529,670 A
• Filed: 12/22/1993
• Issued: 06/25/1996
• Est. Priority Date: 04/19/1991
• Status: Expired due to Term

• Current Assignee: Qimonda AG (Infineon Technologies AG)
• Original Assignee: International Business Machines Corporation, Siemens AG
• Inventors: Ryan, James G., Strippe, David C., Vollmer, Bernd M.
• Primary Examiner(s): NGUYEN, NAM X
• Application Number:
  US08/172,017
• Time in Patent Office: 916 Days
• Field of Search: 204/192.12, 204/192.17, 204/192.15, 204/192.3, 204/298.06, 204/298.11, 204/298.14
• US Class Current: 204/192.15
• CPC Class Codes: C23C 14/04 Coating on selected surface areas, e.g. using masks
• CPC Class Codes: H01J 37/34 operating with cathodic sputtering H01J37/36 takes precedence ; methods of cathodic sputtering C23C14/34
• CPC Class Codes: H01J 37/3447 Collimators, shutters, apertures
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H05K 3/4076 by thin-film techniques

Abstract

A sputtering deposition wherein high aspect ratio apertures are coated with conductive films exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator is used having an aspect ratio that approximates the aspect ratio of the apertures. The resulting film thickness at the bottom of the aperture is at least 2× what can be achieved using conventional sputtering methods. The amount of material deposited at the bottom of the apertures can be further enhanced by elevating the temperature of the substrate (e.g. 450° C.) during the deposition process.

Claims

1. In a process for depositing a titanium or titanium alloy from a deposition source onto an integrated circuit substrate, the substrate having a surface topography that includes at least one depression having an aspect ratio of approximately 1:

1 or greater, the improvement comprising interposing a collimator and heating the substrate to at least approximately 450°

to 500°

C. during the deposition to enhance the thickness of said titanium or titanium alloy film as deposited at the bottom of said depression.

2. The process as recited in claim 1, wherein said alloy of titanium comprises titanium nitride.

3. The process as recited in claim 1, wherein the temperature of the substrate during the deposition is approximately 500°

C.

4. The process as recited in claim 1, wherein apertures in said collimator have an aspect ratio of 2:

1.

5. A process for depositing a layer of titanium or titanium alloy on a substrate having a surface topography that includes at least one horizontal surface and at least one depression having an aspect ratio of approximately 1:

1 or greater, comprising;

causing atoms of said titanium or titanium alloy to pass through a collimator having apertures there-through with an aspect ratio of approximately 1;

1 or greater before being deposited on the substrate,

the substrate being at a temperature of at least 450°

to 500°

C. during said deposition, whereby the thickness of the deposited layer at the bottom of the depression is enhanced relative to the thickness of the deposited layer at the horizontal surface of the substrate.

6. The process as recited in claim 5, wherein said alloy of titanium comprises titanium nitride.

7. The process as recited in claim 5, wherein the temperature of the substrate is at least 500°

C. during the deposition.

8. A process for sputtering a titanium or titanium alloy barrier layer onto a substrate having high aspect ratio apertures formed therein, comprising:

passing atoms of said titanium or titanium alloy from a sputtering source through a collimator having apertures therethrough with aspect ratios of approximately 1;

1 or greater prior to deposition on the substrate,

the substrate being at a temperature of approximately 450°

to 500°

C., to enhance the relative thickness of the titanium or titanium alloy deposited at the bottom of said apertures while maintaining substantially uniform sidewall thickness.

9. The process recited in claim 8, wherein the substrate temperature is approximately 500°

C. during said deposition.

10. In a process of sputtering titanium into a contact hole in a passivation layer disposed on a substrate, the contact hole having an aspect ratio of at least 1:

1, the improvement comprising heating the substrate to approximately 450°

-500°

C. while depositing said titanium through a collimator having an aspect ratio of at least 1;

1 disposed between a titanium sputter source and the substrate.