Method of depositing conductors in high aspect ratio apertures under high temperature conditions
First Claim
1. In a process for depositing a titanium or titanium alloy from a deposition source onto an integrated circuit substrate, the substrate having a surface topography that includes at least one depression having an aspect ratio of approximately 1:
- 1 or greater, the improvement comprising interposing a collimator and heating the substrate to at least approximately 450°
to 500°
C. during the deposition to enhance the thickness of said titanium or titanium alloy film as deposited at the bottom of said depression.
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Accused Products
Abstract
A sputtering deposition wherein high aspect ratio apertures are coated with conductive films exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator is used having an aspect ratio that approximates the aspect ratio of the apertures. The resulting film thickness at the bottom of the aperture is at least 2× what can be achieved using conventional sputtering methods. The amount of material deposited at the bottom of the apertures can be further enhanced by elevating the temperature of the substrate (e.g. 450° C.) during the deposition process.
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Citations
10 Claims
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1. In a process for depositing a titanium or titanium alloy from a deposition source onto an integrated circuit substrate, the substrate having a surface topography that includes at least one depression having an aspect ratio of approximately 1:
- 1 or greater, the improvement comprising interposing a collimator and heating the substrate to at least approximately 450°
to 500°
C. during the deposition to enhance the thickness of said titanium or titanium alloy film as deposited at the bottom of said depression. - View Dependent Claims (2, 3, 4)
- 1 or greater, the improvement comprising interposing a collimator and heating the substrate to at least approximately 450°
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5. A process for depositing a layer of titanium or titanium alloy on a substrate having a surface topography that includes at least one horizontal surface and at least one depression having an aspect ratio of approximately 1:
- 1 or greater, comprising;
causing atoms of said titanium or titanium alloy to pass through a collimator having apertures there-through with an aspect ratio of approximately 1;
1 or greater before being deposited on the substrate,the substrate being at a temperature of at least 450°
to 500°
C. during said deposition, whereby the thickness of the deposited layer at the bottom of the depression is enhanced relative to the thickness of the deposited layer at the horizontal surface of the substrate. - View Dependent Claims (6, 7)
- 1 or greater, comprising;
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8. A process for sputtering a titanium or titanium alloy barrier layer onto a substrate having high aspect ratio apertures formed therein, comprising:
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passing atoms of said titanium or titanium alloy from a sputtering source through a collimator having apertures therethrough with aspect ratios of approximately 1;
1 or greater prior to deposition on the substrate,the substrate being at a temperature of approximately 450°
to 500°
C., to enhance the relative thickness of the titanium or titanium alloy deposited at the bottom of said apertures while maintaining substantially uniform sidewall thickness. - View Dependent Claims (9)
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10. In a process of sputtering titanium into a contact hole in a passivation layer disposed on a substrate, the contact hole having an aspect ratio of at least 1:
- 1, the improvement comprising heating the substrate to approximately 450°
-500°
C. while depositing said titanium through a collimator having an aspect ratio of at least 1;
1 disposed between a titanium sputter source and the substrate.
- 1, the improvement comprising heating the substrate to approximately 450°
Specification