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Method of etching a lens for a semiconductor solid state image sensor

  • US 5,529,936 A
  • Filed: 10/21/1994
  • Issued: 06/25/1996
  • Est. Priority Date: 09/30/1992
  • Status: Expired due to Term
First Claim
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1. A method of making a solid state image sensor, comprising:

  • providing a semiconductor substrate;

    forming an array of photosensitive elements over a surface of the substrate;

    providing an optically-transmissive layer over the substrate, on the same side of the substrate as the photosensitive elements, the optically-transmissive layer overlying the photosensitive elements;

    shaping the optically-transmissive layer so that is has an optical property of focussing light impinging onto the substrate onto the underlying photosensitive elements;

    wherein the optically-transmissive layer is formed to have a plurality of lenslets;

    each lenslet covers, and is associated with, three of the photosensitive elements; and

    each lenslet is formed to diffract light of a first wavelength impinging on the substrate to a first of the three photosensitive elements associated therewith, to diffract light of a second wavelength impinging on the substrate to a second of the three photosensitive elements associated therewith, and to diffract light of a third wavelength impinging on the substrate to a third of the three photosensitive elements associated therewith.

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