Insulated gate semiconductor device and process for fabricating the same
DCFirst Claim
1. An insulated gate reverse staggered type MIS semiconductor device provided on an insulating substrate, said insulated gate semiconductor device comprising:
- a channel forming region made substantially from an intrinsic amorphous semiconductor; and
source and drain regions made of an N-type or P-type semiconductor having a structural degree of ordering higher than that of said amorphous semiconductor as observed by a peak in Raman scattering spectra;
wherein an ultraviolet radiation, a visible light, or a near infrared radiation is irradiated to said N-type or P-type semiconductor.
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Abstract
A thin film transistor of reversed stagger type having improved characteristics and yet obtained by a simple process, which is fabricated by selectively doping the semiconductor region on the gate dielectric to form the source, drain, and channel forming regions by using ion implantation, ion doping, or doping a plasma of ions; and then effecting rapid thermal annealing by irradiating a ultraviolet radiation, a visible light, or a near-infrared radiation for a short period of time. The source, drain, and channel forming regions are formed substantially within a single plane.
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Citations
23 Claims
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1. An insulated gate reverse staggered type MIS semiconductor device provided on an insulating substrate, said insulated gate semiconductor device comprising:
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a channel forming region made substantially from an intrinsic amorphous semiconductor; and source and drain regions made of an N-type or P-type semiconductor having a structural degree of ordering higher than that of said amorphous semiconductor as observed by a peak in Raman scattering spectra; wherein an ultraviolet radiation, a visible light, or a near infrared radiation is irradiated to said N-type or P-type semiconductor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A process for fabricating an insulated gate semiconductor device comprising the steps of:
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forming a gate electrode on a substrate; forming a gate insulating film on said gate electrode; forming an amorphous or a polycrystalline semiconductor film on said gate insulating film; providing a masking material on said semiconductor film; introducing an impurity into said semiconductor film using said masking material as a mask; and imparting structural ordering to said semiconductor film by irradiating thereto an ultraviolet radiation, a visible light, or a near infrared radiation. - View Dependent Claims (12, 13, 14, 15)
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16. A process for fabricating an insulated gate semiconductor device comprising the steps of:
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forming a gate electrode on a substrate; forming a gate insulating film on said gate electrode; forming an amorphous or a polycrystalline semiconductor film on said gate insulating film; providing a masking material on said semiconductor film; introducing an impurity into said semiconductor film using said masking material as a mask; and rendering at least a portion of said semiconductor film either P-type or N-type conductive by irradiating an ultraviolet radiation, a visible light, or a near infrared radiation thereto according to said introduced impurity. - View Dependent Claims (17, 18, 19, 20)
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21. A method for manufacturing a semiconductor device comprising the steps of:
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forming a gate electrode on a substrate; forming a gate insulating layer on said gate electrode; forming a semiconductor film over said gate electrode, with said gate insulating layer interposed therebetween; forming source and drain regions in said semiconductor film by introducing an impurity into a portion of said semiconductor film; and irradiating an ultraviolet radiation, a visible light, or a near infrared radiation to activate said introduced impurity.
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22. An insulated gate reverse staggered type MIS semiconductor device provided on an insulating substrate, said insulated gate semiconductor device comprising:
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a channel forming region made substantially from an intrinsic amorphous semiconductor; and source and drain regions made of an N-type or P-type semiconductor having a structural degree of ordering higher than that of said amorphous semiconductor as observed by a peak in Raman scattering spectra, wherein said channel forming region and said source and drain regions are provided in one semiconductor film, and an ultraviolet radiation, a visible light or a near infrared radiation is irradiated to said N-type or P-type semiconductor.
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23. An insulated gate reverse staggered type MIS semiconductor device provided on an insulating substrate, said insulated gate semiconductor device comprising:
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a channel forming region made substantially from an intrinsic amorphous semiconductor; and source and drain regions made of an N-type or P-type semiconductor having a structural degree of ordering higher than that of said amorphous semiconductor as observed by a peak in Raman scattering spectra, wherein light having a wavelength of 4 to 0.5 μ
m is irradiated to said N-type or P-type semiconductor.
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Specification