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Insulated gate semiconductor device and process for fabricating the same

DC
  • US 5,530,265 A
  • Filed: 08/05/1994
  • Issued: 06/25/1996
  • Est. Priority Date: 08/12/1993
  • Status: Expired due to Term
First Claim
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1. An insulated gate reverse staggered type MIS semiconductor device provided on an insulating substrate, said insulated gate semiconductor device comprising:

  • a channel forming region made substantially from an intrinsic amorphous semiconductor; and

    source and drain regions made of an N-type or P-type semiconductor having a structural degree of ordering higher than that of said amorphous semiconductor as observed by a peak in Raman scattering spectra;

    wherein an ultraviolet radiation, a visible light, or a near infrared radiation is irradiated to said N-type or P-type semiconductor.

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