Truing apparatus for wafer polishing pad

• US 5,531,635 A
• Filed: 03/20/1995
• Issued: 07/02/1996
• Est. Priority Date: 03/23/1994
• Status: Expired due to Term

• Current Assignee: Ebara Corporation
• Original Assignee: Mitsubishi Materials Corporation
• Inventors: Mogi, Katsumi, Endo, Osamu
• Primary Examiner(s): Rose, Robert A.
• Application Number:
  US08/406,527
• Time in Patent Office: 470 Days
• Field of Search: 451/72, 451/443, 451/444, 451/56
• US Class Current: 451/72
• CPC Class Codes: B24B 53/017 Devices or means for dressing, cleaning or otherwise conditioning lapping tools

Abstract

A truing apparatus for a wafer polishing pad is provided which is capable of obtaining a sufficient truing effect while keeping the polishing amount of a polishing pad to a maximum. The truing apparatus includes a truing grinding wheel having an abrasive grain layer having ultra-abrasive grains electrodeposited thereon, a support arm for rotatably supporting the truing grinding wheel by bringing the polishing surface of an electrodeposition abrasive grain layer into abutment with the polishing pad, a grinding wheel rotary motor for rotating the grinding wheel, a self-aligning bearing disposed between a grinding wheel support plate and a grinding wheel rotation shaft, and pure water supply means for supplying pure water from the inside of the truing grinding wheel. The outer diameter of the grinding wheel is greater than the outer diameter of the wafers W, and the polishing surface of the grinding wheel is brought into abutment with the polishing pad over the overall width of one circumferential portion of a wafer polishing area. The grain size of the ultra-abrasive grains is preferably set at #60 to #230.

Claims

1. A truing apparatus for truing a wafer polishing pad, which apparatus is attached to a wafer polishing apparatus for polishing a plurality of wafers while the wafers are rotated on a polishing pad attached to a platen and which apparatus trues the surface of said polishing pad, said truing apparatus comprising:

a truing grinding wheel having an annular abrasive grain layer including ultra-abrasive grains electrodeposited therein in a metallic plating bath;

a grinding wheel support means for rotatably supporting said truing grinding wheel in a state in which the polishing surface of said abrasive grain layer is brought into abutment with the surface of the polishing pad;

a grinding wheel rotation means for rotating said truing grinding wheel about its axis;

a self-aligning bearing means, disposed between said truing grinding wheel and said grinding wheel rotation means, for allowing the tilted movement of the truing grinding wheel; and

pure water supply means for supplying pure water from the interior of said truing grinding wheel to a region between the polishing surface and the polishing pad, wherein the outer diameter of said truing polishing surface is greater than the outer diameter of a wafer to be polished by said polishing pad, and said grinding wheel support means brings the polishing surface of said truing grinding wheel into abutment with the polishing pad over the overall width of one circumferential portion of an annular wafer polishing area on the surface of said polishing pad.

2. A truing apparatus according to claim 1, wherein the grain size of said ultra-abrasive grains is set at #60 to #230.

4. A truing apparatus according to any one of claims 1 to 3, wherein said grinding wheel support means is arranged to bring said truing grinding wheel into abutment with said polishing pad at 0.1 to 1 kgf/cm².

5. A truing apparatus according to any one of claims 1 to 3, wherein said grinding wheel support means comprises:

a base;

a grinding wheel hoisting and lowering means for moving said truing grinding wheel up and down with respect to the base; and

a grinding wheel advance/retreat means for making a truing grinding wheel move forward or backward between a position at which truing grinding wheel is retracted from the wafer polishing apparatus and a truing position.

6. A truing apparatus according to any one of claims 1 to 3, wherein the abrasive grain layer of said truing grinding wheel is formed by bonding an ultra-abrasive cloth to a grinding wheel base wherein ultra-abrasive grains are electrodeposited on a surface of said cloth.

7. A truing apparatus according to any one of claims 1 to 3, wherein said grinding wheel rotation means is connected to a control means, wherein said control means is programmed so as to operate said grinding wheel rotation mechanism in order to perform truing continuously for 0.5 to 5 minutes in one truing step.

8. A truing apparatus according to any one of claims 1 to 3, wherein a plurality of grooves are formed in said abrasive grain layer.

3. A truing apparatus for a wafer polishing pad, for truing the surface of a polishing pad which is attached onto a platen of a wafer polishing apparatus and which is used for mechanical-chemical polishing of a wafer, said truing apparatus comprising:

a truing grinding wheel having an annular abrasive grain layer including ultra-abrasive grains electrodeposited therein in a metallic plating bath;

a grinding wheel support means for rotatably supporting said truing grinding wheel in a state in which the polishing surface of said abrasive grain layer is brought into abutment with the surface of the polishing pad;

a grinding wheel rotation means for rotating said truing grinding wheel about its axis;

a self-aligning bearing means, disposed between said truing grinding wheel and said grinding wheel rotation means, for allowing the tilted movement of the truing grinding wheel; and

pure water supply means for supplying pure water from the interior of said truing grinding wheel to a region between the polishing surface and the polishing pad, wherein the grain size of said ultra-abrasive grains is set at #60 to #230.