Process for the production of partially reduced indium oxide-tin oxide targets
First Claim
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1. Process for the production of a partially reduced indium oxide-tin-oxide target comprisingpreparing a powder mixture comprising SnO and In2 O3, andsintering said mixture under an argon atmosphere in a hot press at an applied pressure above 10 MPa, up to a maximum of 18 MPa.
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Abstract
The tin-containing component of a powder mixture includes SnO and is subjected to a mixing treatment with the In2 O3 before compaction to adjust the degree of reduction of the sputtering target in a simple and reproducible manner.
13 Citations
5 Claims
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1. Process for the production of a partially reduced indium oxide-tin-oxide target comprising
preparing a powder mixture comprising SnO and In2 O3, and sintering said mixture under an argon atmosphere in a hot press at an applied pressure above 10 MPa, up to a maximum of 18 MPa.
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5. Partially reduced indium-tin-oxide sputtering target consisting of a homogenous sintered mixture comprising SnO and In2 O3.
Specification
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Current AssigneeLeybold Materials GmbH
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Original AssigneeLeybold Materials GmbH
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InventorsWeigert, Martin, Schlott, Martin, Gehman, Bruce, Dauth, Wolfgang, Kutzner, Martin
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Primary Examiner(s)Jordan, Charles T.
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Assistant Examiner(s)JENKINS, DANIEL J
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Application NumberUS08/384,181Time in Patent Office512 DaysField of Search419/6, 419/19, 419/48, 419/49, 257/449, 264/56, 264/61, 264/122, 264/65, 264/DIG. 25, 428/426, 501/134US Class Current264/122CPC Class CodesC04B 35/457 based on tin oxides or stan...C23C 14/3414 Metallurgical or chemical a...
