Method of making a field effect trench transistor having lightly doped epitaxial region on the surface portion thereof

• US 5,532,179 A
• Filed: 05/23/1995
• Issued: 07/02/1996
• Est. Priority Date: 07/24/1992
• Status: Expired due to Term

• Current Assignee: Siliconix Incorporated (Vishay Intertechnology Incorporated)
• Original Assignee: Siliconix Incorporated (Vishay Intertechnology Incorporated)
• Inventors: Hshieh, Fwu-Iuan, Owyang, King, Chang, Mike F., Kwan, Sze-Hon
• Primary Examiner(s): QUACH, TUAN N
• Application Number:
  US08/447,484
• Time in Patent Office: 406 Days
• Field of Search: 437/40 DM, 437/41 DM, 437/40 R, 437/40 RG, 437/203, 437/154, 257/328, 257/330, 257/332, 257/335, 257/336
• US Class Current: 438/270
• CPC Class Codes: H01L 29/0878 Impurity concentration or distribution
• CPC Class Codes: H01L 29/4236 within a trench, e.g. trench gate electrode, groove gate electrode
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A DMOS field effect transistor having its gate electrode located in a trench includes a lightly doped epitaxial layer overlying the usual epitaxial layer. The trench penetrates only part way through the upper epitaxial layer which is more lightly doped than is the underlying lower epitaxial layer. The lightly doped upper epitaxial layer reduces the electric field at the bottom of the trench, thus protecting the gate oxide from breakdown during high voltage operation. Advantageously the upper portion of the lightly doped upper epitaxial layer has little adverse effect on the transistor'"'"'s on resistance.

Claims

1. A method of making a field effect transistor comprising the steps of:

providing a substrate of a first conductivity type and having a principal surface;

growing a first epitaxial layer of the first conductivity type on the principal surface, the first epitaxial layer having a doping level less than that of the substrate;

growing a second epitaxial layer of the first conductivity type on the first epitaxial layer, the second epitaxial layer having a doping level less than that of the first epitaxial layer;

forming a body region of a second conductivity type in the second epitaxial layer and extending to a principal surface thereof, the body region extending at least partly into the first epitaxial layer;

forming a source region of the second conductivity type in the body region and extending to the principal surface thereof;

forming a trench extending from the principal surface of the second epitaxial layer through the source region and the body region, but not extending into the first epitaxial layer; and

filling the trench at least partially with a conductive gate electrode material.

2. The method of claim 1, wherein the trench extends to within 0.5 microns of the first epitaxial layer, and the level of doping of the second epitaxial layer is about 50% that of the first epitaxial layer.