Plasma treatment method in electronic device manufacture
First Claim
1. A method of manufacturing an electronic device in which a plasma treatment is carried out on a device substrate which is mounted on a supporting electrode facing a perforated gas-feeding electrode, a reactive plasma being generated in a space between the electrodes from a mixture of reaction gases which is fed into the space through at least the perforated electrode, wherein a primary mixture of gases flows in a direction across the substrate from a first area of the space to which it is supplied by a first supply line, and a second supply line feeds a secondary mixture of gases to a second area of the space through the perforated electrode, the second area being excluded from the first area and the second area being along the flow direction from the first area, the primary mixture of gases comprising a first reaction gas which is depleted at a faster rate in the plasma treatment than a second reaction gas in the primary mixture, and the second supply line supplying a secondary mixture which is richer in the first reaction gas than the primary mixture supplied by the first supply line, whereby the plasma treatment is carried out more uniformly over the area of the supporting electrode.
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Accused Products
Abstract
In the manufacture of a large-area electronic device such as a large-area liquid-crystal display device with thin-film address and drive circuitry, a plasma treatment is carried out on a device substrate (4) which is mounted on a supporting electrode (11) facing a perforated gas-feeding electrode (12). A reactive plasma (5) is generated in a space between the electrodes (11, 12) from a mixture of reaction gases which is fed into the space through at least the perforated electrode (12). The mixture of gases comprises a first reaction gas (e.g. SiH4) which is depleted at a faster rate in the plasma treatment than a second reaction gas (e.g N2). Through an area (12b) of the perforated electrode, one or more second supply lines (22) feeds a secondary mixture which is richer in the first reaction gas than a primary mixture supplied by a first supply line (21). This arrangement permits the plasma treatment to be carried out more uniformly over the area of the supporting electrode (11), by fine tuning the gas composition in depleted areas after the main aspects of the process performance (e.g temperature, pressure, reactant gases, composition of the primary mixture) have been determined in accordance with the desired plasma treatment properties.
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Citations
9 Claims
- 1. A method of manufacturing an electronic device in which a plasma treatment is carried out on a device substrate which is mounted on a supporting electrode facing a perforated gas-feeding electrode, a reactive plasma being generated in a space between the electrodes from a mixture of reaction gases which is fed into the space through at least the perforated electrode, wherein a primary mixture of gases flows in a direction across the substrate from a first area of the space to which it is supplied by a first supply line, and a second supply line feeds a secondary mixture of gases to a second area of the space through the perforated electrode, the second area being excluded from the first area and the second area being along the flow direction from the first area, the primary mixture of gases comprising a first reaction gas which is depleted at a faster rate in the plasma treatment than a second reaction gas in the primary mixture, and the second supply line supplying a secondary mixture which is richer in the first reaction gas than the primary mixture supplied by the first supply line, whereby the plasma treatment is carried out more uniformly over the area of the supporting electrode.
Specification