Plasma treatment method in electronic device manufacture

• US 5,532,190 A
• Filed: 05/15/1995
• Issued: 07/02/1996
• Est. Priority Date: 05/26/1994
• Status: Expired due to Fees

• Current Assignee: US Philips Corporation (Koninklijke Philips N.V.)
• Original Assignee: US Philips Corporation (Koninklijke Philips N.V.)
• Inventors: Goodyear, Andrew L., French, Ian D.
• Primary Examiner(s): Breneman, R. Bruce
• Assistant Examiner(s): Paladugu, Ramamohan Rao
• Application Number:
  US08/442,579
• Time in Patent Office: 414 Days
• Field of Search: 118/715, 118/723 R, 118/723 E, 156/345 V, 156/345 P, 437/225, 437/228
• US Class Current: 438/710
• CPC Class Codes: C23C 16/45512 Premixing before introduction in the reaction chamber
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/45574 Nozzles for more than one gas
• CPC Class Codes: C23C 16/5096 Flat-bed apparatus
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: Y10S 438/935 Gas flow control

Abstract

In the manufacture of a large-area electronic device such as a large-area liquid-crystal display device with thin-film address and drive circuitry, a plasma treatment is carried out on a device substrate (4) which is mounted on a supporting electrode (11) facing a perforated gas-feeding electrode (12). A reactive plasma (5) is generated in a space between the electrodes (11, 12) from a mixture of reaction gases which is fed into the space through at least the perforated electrode (12). The mixture of gases comprises a first reaction gas (e.g. SiH₄) which is depleted at a faster rate in the plasma treatment than a second reaction gas (e.g N₂). Through an area (12b) of the perforated electrode, one or more second supply lines (22) feeds a secondary mixture which is richer in the first reaction gas than a primary mixture supplied by a first supply line (21). This arrangement permits the plasma treatment to be carried out more uniformly over the area of the supporting electrode (11), by fine tuning the gas composition in depleted areas after the main aspects of the process performance (e.g temperature, pressure, reactant gases, composition of the primary mixture) have been determined in accordance with the desired plasma treatment properties.

Claims

1. A method of manufacturing an electronic device in which a plasma treatment is carried out on a device substrate which is mounted on a supporting electrode facing a perforated gas-feeding electrode, a reactive plasma being generated in a space between the electrodes from a mixture of reaction gases which is fed into the space through at least the perforated electrode, wherein a primary mixture of gases flows in a direction across the substrate from a first area of the space to which it is supplied by a first supply line, and a second supply line feeds a secondary mixture of gases to a second area of the space through the perforated electrode, the second area being excluded from the first area and the second area being along the flow direction from the first area, the primary mixture of gases comprising a first reaction gas which is depleted at a faster rate in the plasma treatment than a second reaction gas in the primary mixture, and the second supply line supplying a secondary mixture which is richer in the first reaction gas than the primary mixture supplied by the first supply line, whereby the plasma treatment is carried out more uniformly over the area of the supporting electrode.

2. A method as claimed in claim 1, further characterised in that the plasma treatment involves depositing material on a surface of the substrate.

3. A method as claimed in claim 2, further characterised in that the first reaction gas is silane (SiH₄).

4. A method as claimed in claim 3, further characterised in that the second reaction gas comprises nitrogen (N₂), and the deposited material is silicon nitride.

5. A method as claimed in claim 4, further characterised in that the second reaction gas is ammonia (NH₃).

6. A method as claimed in claim 1, further characterised in that the plasma treatment involves etching away material from a surface of the substrate.

7. A method as claimed in claim 1, further characterised in that the first supply line feeds the primary mixture through a central area of the perforated electrode, and the second supply line feeds the secondary mixture through a peripheral area of the perforated electrode, the direction of gas flow over the supporting electrode being radially outward from the first area of the space.

8. A method as claimed in claim 1, further characterised in that the first supply line feeds a first peripheral area of the space through an inlet separate from the perforated electrode, the direction of gas flow over the supporting electrode being longitudinally across the supporting electrode, from the first peripheral area to an opposite peripheral area of the space.

9. The method of claim 1, wherein the first supply line feed the primary mixture through a central area of the perforated electrode, and the second supply line feeds the secondary mixture through a peripheral area of the perforated electrode, the direction of gas flow over the supporting electrode being radially inward toward the first area of the space.