Solid-state image pickup device

• US 5,532,743 A
• Filed: 11/17/1994
• Issued: 07/02/1996
• Est. Priority Date: 05/01/1991
• Status: Expired due to Fees

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Komobuchi, Hiroyoshi
• Primary Examiner(s): GARBER, WENDY RAE
• Application Number:
  US08/344,681
• Time in Patent Office: 593 Days
• Field of Search: 348/362, 348/363, 348/364, 348/294, 348/297, 359/53, 359/54, 359/55, 257/292, 257/294, 257/432, 257/435
• US Class Current: 348/297
• CPC Class Codes: G02F 1/1354 having a particular photoconducting structure or material
• CPC Class Codes: G02F 1/1357 Electrode structure

Abstract

An image pickup device capable of controlling the quantity of incident light. The device has a liquid crystal layer with upper and lower transparent electrodes disposed over a photosite. A fixed bias voltage is applied to the upper transparent electrode, while another voltage is applied to the lower transparent layer. The photosite converts incident light into electrons, and then stores a signal charge produced by the conversion of the incident light. A variation in the stored signal charge varies the voltage applied to the lower transparent layer. Thus, the liquid crystal layer modulates the incident light in response to a variation of the signal charge quantity.

Claims

1. A solid-state image pickup device comprising:

a photosite disposed on a substrate, for converting incident light to electrons and for storing a photo-electrically converted signal charge produced by said electrons, and

an incident light control layer disposed over a light incident side of said photosite, for modulating light transmitted through said incident light control layer in response to variation in quantity of a stored signal charge produced by

variation in quantity of incident light received by said photosite, and

a first transparent electrode located on a light incident Side of said incident light control layer and electrically connected to said photosite through said incident light control layer.

2. A solid-state image pickup device in accordance with claim 1, wherein

said light transmitted through said incident light control layer is modulated in response to variation in voltage applied across said incident light control layer by said first transparent electrode,

such variation in voltage applied across said incident light control layer being produced by variation in a stored signal charge.

3. A solid-state image pickup device in accordance with claim 1, further including

a second transparent electrode disposed at a photosite side of said incident light control layer,

light transmitted through said incident light control layer being modulated in response to variation in a voltage applied to said second transparent electrode,

said second transparent electrode being in a floating condition such that a voltage applied to said second transparent electrode varies in response to variation in quantity of a signal charge stored at said photosite.

4. A solid-state image pickup device in accordance with claim 3, wherein

said second transparent electrode is conductively connected to said photosite.

5. A solid-state image pickup device in accordance with claim 1, wherein

said incident light control layer includes an area of constant transmittance through which light is transmitted to said photosite, said area of constant transmittance being narrower than an area of said photosite.

6. A solid-state image pickup device in accordance with claim 1, wherein

said first transparent electrode has an aperture section narrower than said photosite.

7. A solid-state image pickup device in accordance with claim 3, wherein

said second transparent electrode has an aperture section narrower than said photosite.

8. A solid-state image pickup device in accordance with claim 5, wherein

said area of constant transmittance is formed by a transparent member, passing through said incident light control layer.

24. A solid-state image pickup device in accordance with claim 2, wherein

a bias voltage is applied to said first transparent electrode to produce a voltage across said incident light control layer, and

variation in a stored signal charge varies such voltage across said incident control layer.

25. A solid-state image pickup device in accordance with claim 3, wherein said second transparent electrode is capacitively connected to said photosite.

26. A solid-state image pickup device in accordance with claim 1, wherein said incident light control layer modulates light during a single frame/field period of operation of said pickup device in response to variation in quantity of a stored signal charge during said same frame/field period.

28. A solid-state image pickup device in accordance with claim 1, wherein said first transparent electrode is capacitively connected to said photosite.

29. A solid-state image pickup device in accordance with claim 1, wherein said first transparent electrode is conductively connected to said photosite.

9. A solid-state image pickup device, comprising:

a photosite disposed on a substrate, for converting incident light to electrons and for storing a photo-electrically converted signal charge produced by said electrons, and

an incident light control layer disposed over a light incident side of said photosite, for modulating light transmitted through said incident light control layer, such that variation in quantity of a photo-electrically converted signal charge produced by variation of incident light received by said photosite is applied directly to said incident light control layer through layers of material interposed between said incident light control layer and said photosite to operate said incident light control layer,

thereby controlling incident light received by said photosite to vary a quantity of said photo-electrically converted signal charge.

15. A solid-state image pickup device in accordance with claim 9, wherein

said incident light control layer has a first transparent electrode disposed at a light incident side of said incident light control layer and a second transparent electrode disposed at a photosite side of said incident light control layer,

said first transparent electrode is supplied with a bias first voltage, and

light transmitted through said incident light control layer is modulated in response to variation in a second voltage applied to said second transparent electrode,

said second transparent electrode being in a floating condition such that a second voltage applied to said second transparent electrode varies in response to variation in quantity of a stored signal charge produced by variation in quantity of light transmitted through said incident light control layer.

16. A solid-state image pickup device in accordance with claim 9, wherein

said incident light control layer has a first transparent electrode disposed at a light incident side of said incident light control layer and a second transparent electrode disposed at a photosite side of said incident light control layer,

said first transparent electrode is supplied with a bias first voltage, and

light transmitted through said incident light control layer is modulated by a second voltage applied to said second transparent electrode,

said second transparent electrode being conductively or capacitively connected to said photosite.

17. A solid-state image pickup device in accordance with claim 9, wherein

said incident light control layer includes an area of constant transmittance through which light is transmitted to a photosite said area of said incident light control layer being narrower than an area of said photosite.

18. A solid-state image pickup device in accordance with claim 15, wherein said first transparent electrode has an aperture section narrower than said photosite.

19. A solid-state image pickup device in accordance with claim 15, wherein

said second transparent electrode has an aperture section narrower than said photosite.

20. A solid-state image pickup device in accordance with claim 9, wherein

said incident light control layer is disposed above a partial section of said photosite.

21. A solid-state image pickup device in accordance with claim 20, wherein

a transparent member, passing through said incident light control layer, is disposed above another partial section of said photosite.

22. A solid-state image pickup device in accordance with claim 16, wherein

said first transparent electrode has an aperture section narrower than a section of said photosite.

23. A solid-state image pickup device in accordance with claim 16, wherein

said second transparent electrode has an aperture section narrower than a section of said photosite.

27. A solid-state image pickup device in accordance with claim 9, wherein said incident light control layer modulates light during a single frame/field period of operation of said pickup device in response to variation in quantity of a stored signal charge during said same frame/field period.

10. A solid-state image pickup device comprising:

a plurality of photosites, disposed on a substrate in a matrix arrangement, for converting incident light to electrons and for storing a photo-electrically converted signal charge produced by said electrons, and

a plurality of incident light control layer areas, each of said incident light control layer areas being disposed over a light incident side of at least one of said plurality of photosites, for modulating light transmitted therethrough in response to variation in quantity of a stored signal charge quantity produced by variation in an amount of light incident on said photosite, wherein

at least one of said incident light control layer areas has a first transparent electrode disposed at a light incident side of said incident light control layer area and a second transparent electrode disposed at a photosite side of said incident light control layer area,

said first transparent electrode is supplied with a bias first voltage and has an aperture section narrower than an aperture section of said photosite,

light transmitted through said at least one incident light control layer area is modulated in response to variation in a second voltage applied to said second transparent electrode, and

said second transparent electrode is in a floating condition such that a second voltage applied to said second transparent electrode varies in response to variation in quantity of a stored signal charge produced by variation in quantity of light transmitted through said at least one incident light control layer area.

11. A solid-state image pickup device comprising:

a plurality of photosites, disposed on a substrate in a matrix arrangement, for converting incident light to electrons and for storing a photo-electrically converted signal charge produced by said electrons, and

a plurality of incident light control layer areas, each of said incident light control areas being disposed over a light incident side of at least one of said plurality of photosites, for modulating light transmitted therethrough in response to variation in quantity of a stored signal charge produced by variation in an amount of light incident on said photosite, wherein

at least one of said incident light control layer areas has a first transparent electrode disposed at a light incident side of said at least one incident light control layer area and a second transparent electrode disposed at a photosite side of said at least one incident light control layer area,

said first transparent electrode is supplied with a bias first voltage,

light transmitted through said at least one incident light control layer area is modulated in response to variation in a second voltage applied to said second transparent electrode,

said second transparent electrode has an aperture section narrower than an aperture section of said photosite and is in a floating condition such that a second voltage applied to said second transparent electrode varies in response to variation of a quantity of a stored signal charge produced by variation of a quantity of light transmitted through said at least one incident light control layer area.

12. A solid-state image pickup device comprising:

a plurality of photosites, disposed on a substrate in a matrix arrangement, for converting incident light to electrons and for storing a photo-electrically converted signal charge produced by said electrons,

a plurality of incident light control layer areas, each of said incident light control layer areas being disposed over a light incident side of at least one of said plurality of photosites, for modulating light transmitted therethrough in response to variation in quantity of a stored signal charge produced by variation in an amount of said light incident on each said photosite, wherein

at least one of said incident light control layer areas has a transparent member which passes therethrough and which is disposed above said photosite, so as to form a permanent window in said incident light control layer.

13. A solid-state image pickup device comprising:

a plurality of photosites, disposed on a substrate in a matrix arrangement, for converting incident light to electrons and for storing a photo-electrically converted signal charge produced by said electrons, and

plurality of incident light control layer areas, each of said incident light control layer areas being disposed over a light incident side of at least one of said plurality of photosites, for modulating light transmitted therethrough in response to variation in quantity of a stored signal charge produced by variation in an amount of light incident on said photosite, at least one of said it incident light control layer areas having a first transparent electrode disposed at a light incident side of said incident light control layer area and a second transparent electrode disposed at a photosite side of said incident light control layer area, wherein

said first transparent electrode is supplied with a bias first voltage and has an aperture section narrower than a section of said photosite,

light transmitted through said at least one incident light control layer area is modulated by a second voltage applied to said second transparent electrode, and

said second transparent electrode is connected to a depletion impurity diffusion part of said photosite.

14. A solid-state image pickup device comprising:

a plurality of photosites, disposed on a substrate in a matrix arrangement, for converting incident light to electrons and for storing a photo-electrically converted signal charge produced by said electrons, and

a plurality of incident light control layer areas, each of said incident light control layer areas being disposed over a light incident side of at least one of said plurality of photosites, for modulating light transmitted therethrough in response to variation in quantity of a stored signal charge produced by variation in an amount of light incident on said photosite, at least one of said incident light control layer areas having a first transparent electrode disposed at a light incident side of said at least one incident light control layer area and a second transparent electrode disposed at a photosite side of said at least one incident light control layer area, wherein

said first transparent electrode is supplied with a bias first voltage,

light transmitted through said at least one incident light control layer area is modulated by a second voltage applied to said second transparent electrode, and

said second transparent electrode has an aperture section narrower than a section of said photosite.