Two-wavelength antireflection film

• US 5,532,871 A
• Filed: 11/24/1993
• Issued: 07/02/1996
• Est. Priority Date: 11/25/1992
• Status: Expired due to Term

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Hashimoto, Shigeru, Yokoyama, Akihiko
• Primary Examiner(s): Epps, Georgia Y.
• Assistant Examiner(s): Lester, Evelyn A.
• Application Number:
  US08/156,694
• Time in Patent Office: 951 Days
• Field of Search: 359/359, 359/589, 359/653, 359/722
• US Class Current: 359/359
• CPC Class Codes: G02B 1/115 Multilayers
• CPC Class Codes: G03F 7/70308 Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
• CPC Class Codes: G03F 7/70575 Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength

Abstract

A two-wavelength antireflection film includes a substrate and an alternate film. The alternate film consists of alternately laminated layers of a low refractive index material and an intermediate refractive index material, in order from a light entrance side to the surface of the substrate. The low refractive index material is at least a member selected from the group consisting of MgF₂, SiO₂, BaF₂, LiF, SrF₂, AlF₃, NaF, a mixture thereof and a compound thereof. The intermediate refractive index material is at least a member selected from the group consisting of Al₂ O₃, LaF₃, NdF₃, YF₃, a mixture thereof and a compound thereof.

Claims

1. A two-wavelength antireflection film comprising:

a substrate; and

an alternate film consisting of alternately laminated layers of a low refractive index material and an intermediate refractive index material, in an order from a light entrance side to a surface of said substrate;

wherein said low refractive index material and said intermediate refractive index material are alternately laminated in four layers with optical thicknesses, having a design wavelength λ

₀, in an order from a light entrance side, of 0.2λ

₀ to 0.4λ

₀ for the 1st layer, 0.05λ

₀ to 0.2λ

₀ for the 2nd layer, 0.2λ

₀ to 0.4λ

₀ for the 3rd layer, and 0.4λ

₀ to 0.6λ

₀ for the 4th layer.

2. A two-wavelength antireflection film according to claim 1, wherein said low refractive index material is at least a member selected from a group consisting of MgF₂, SiO₂, BaF₂, LiF, SrF₂, AlF₃, NaF, a mixture thereof and a compound thereof, and said intermediate refractive index material is at least a member selected from a group consisting of Al₂ O₃, LaF₃, NdF₃, YF₃, a mixture thereof and a compound thereof.

3. A two-wavelength antireflection film according to claim 1, further comprising, next to said 4th layer, an undercoat layer of the low refractive index material, with an optical thickness of an integral multiple of about 0.5λ

₀.

4. A two-wavelength antireflection film comprising:

a substrate; and

an alternate film consisting of alternately laminated layers of a low refractive index material and an intermediate refractive index material, in an order from a light entrance side to a surface of said substrate;

wherein said low refractive index material and said intermediate refractive index material are alternately laminated in six layers with optical thicknesses, having a design wavelength λ

₀, in an order from a light entrance side, of 0.2λ

₀ to 0.4λ

₀ for the 1st layer, 0.05λ

₀ to 0.2λ

₀ for the 2nd layer, 0.2λ

₀ to 0.4λ

₀ for the 3rd layer, 0.9λ

₀ to 1.1λ

₀ for the 4th layer, 0.2λ

₀ to 0.4λ

₀ for the 5th layer, and 0.4λ

⁰ to 0.6λ

⁰ for the 6th layer.

5. A two-wavelength antireflection film according to claim 4, further comprising, next to said 6th layer, an undercoat layer of the low refractive index material, with an optical thickness of an integral multiple of about 0.5λ

₀.

13. A two-wavelength antireflection film according to claim 4, wherein said low refractive index material is at least a member selected from a group consisting of MgF₂, SiO₂, BaF₂, LiF, SrF₂, AlF₃, NaF, a mixture thereof and a compound thereof, and said intermediate refractive index material is at least a member selected from a group consisting of Al₂ O₃, LaF₃, NdF₃, YF₃, a mixture thereof and a compound thereof.

6. A two-wavelength antireflection film comprising:

a substrate; and

a four-layered film laminated on said substrate and consisting, in an order from a farthest side from a surface of said substrate, of a 1st layer of a low refractive index material, a 2nd layer of a high refractive index material, a 3rd layer of a low refractive index material, and a 4th layer of an intermediate refractive index material, wherein optical thicknesses D₁, D₂, D₃ and D4 layers are in ranges of;

0.2λ

₀ ≦

D₁ ≦

0.4λ

₀,

0.4λ

₀ ≦

D₂ ≦

0.15λ

₀,

0.4λ

₀ ≦

D₃ ≦

0.6λ

₀,

0.4λ

₀ ≦

D₄ ≦

0.6λ

₀,

wherein λ

₀ is a design wavelength.

7. A two-wavelength antireflection film according to claim 6, wherein said low refractive index material is MgF₂ or SiO₂, said high refractive index material is Y₂ O₃ or HfO₂, and said intermediate refractive index material is Al₂ O₃.

8. A two-wavelength antireflection film according to claim 6, further comprising, between said multi-layered film and said substrate, an undercoat layer of the low refractive index material with an optical thickness of an integral multiple of 0.5λ

₀.

9. A two-wavelength antireflection film according to claim 6, wherein the layer of said high refractive index material is formed in a presence of an electric field generated by radio-frequency excitation.

10. A two-wavelength antireflection film according to claim 6, wherein the layer of said high refractive index material is formed by ion assisted evaporation employing oxygen ions.

11. A two-wavelength antireflection film according to claim 6, wherein the layers of said low refractive index material are formed without oxygen gas introduction.

12. A two-wavelength antireflection film according to claim 6, wherein the layers of said intermediate and high refractive index materials are formed with film forming speeds not exceeding 1 nm/sec.