Negative voltage generator for flash EPROM design

• US 5,532,960 A
• Filed: 01/11/1995
• Issued: 07/02/1996
• Est. Priority Date: 08/31/1993
• Status: Expired due to Term

• Current Assignee: Macronix International Co., Ltd.
• Original Assignee: Macronix International Co., Ltd.
• Inventors: Chao, Liang, Lin, Tien-Ler
• Primary Examiner(s): NGUYEN, TAN
• Application Number:
  US08/371,361
• Time in Patent Office: 538 Days
• Field of Search: 365/185, 365/218, 365/900, 365/189.09, 365/185.16, 365/185.29, 327/434, 327/536, 327/589
• US Class Current: 365/185.29
• CPC Class Codes: G11C 16/30 Power supply circuits
• CPC Class Codes: G11C 5/145 Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor G11C5/141 takes precedence
• CPC Class Codes: H02M 3/07 using capacitors charged and discharged alternately by semiconductor devices with control electrode , e.g. charge pumps

Abstract

A circuit is provided for supplying a negative high voltage to an integrated circuit from a high positive voltage source V_PP. The negative voltage is applied to a plurality of FLASH electrically erasable programmable read only memory (EPROM) cells. The circuit includes an oscillator coupled to a voltage converter which provides a periodic signal. The periodic signal is coupled to a charge pump including three P-channel type transistors to produce the negative voltage. The source and drain of the first transistor is coupled to the periodic signal. The second transistor'"'"'s gate and drain is coupled to a reference ground potential with the source coupled to the first transistor'"'"'s gate. Finally, the third transistor'"'"'s drain and gate is coupled to the first transistor'"'"'s gate and the third transistor'"'"'s source outputs negative voltage to floating gates of the plurality of FLASH EPROM cells during an erase operation. Further, the negative voltage generated is relatively precise, so no regulation is required.

Claims

1. A FLASH EPROM integrated memory circuit receiving a supply voltage V_cc for read operations and a programming potential V_PP for programming operations, comprising:

an array of FLASH EPROM storage transistors, storage transistors in the array having respective floating gates, sources and drains;

addressing means, coupled to the array, for generating address signals to access selected storage transistors;

a plurality of wordlines, coupled to the floating gates of storage cells in respective rows;

a plurality of bitlines, coupled to drains of storage cells in respective columns;

a plurality of local virtual ground lines, each coupled to the sources of storage cells in respective columns;

means for connecting the local virtual ground lines in the array of storage cells with a virtual ground terminal;

means, coupled to the plurality of wordlines and the plurality of virtual ground lines, for supplying a negative gate erasing potential on wordlines and a positive voltage on virtual ground lines, to remove charge in the floating gates of selected storage transistors, said means for Supplying a negative gate erasing potential including a negative voltage generator, responsive to the programming potential V_PP, to generate the negative erasing potential on an output node, said negative voltage generator including,

a positive high voltage input to receive V_PP ;

a voltage converter, coupled to the positive high voltage input and the clock driver to convert the clock signal to a positive periodic signal having a particular amplitude different than V_CC ; and

a charge pump, coupled to voltage converter, for generating negative voltage on the output node in response to the positive periodic signal.

2. The circuit of claim 1, wherein the charge pump includes:

a first capacitor having a first terminal and a second terminal, the first terminal coupled to the voltage converter to receive the positive periodic signal;

a clamp circuit, coupled to the second terminal of the first capacitor, to clamp the second terminal to less than or equal to a maximum potential; and

a switch, coupled between the second terminal of the first capacitor and the output node, having a conductive state when voltage on the second terminal of the first capacitor falls below voltage on the output node.

3. The circuit of claim 2, wherein the first capacitor comprises:

a capacitor configured transistor having a source and drain coupled to the first terminal of the first capacitor and a gate coupled to the second terminal of the first capacitor.

4. The circuit of claim 3, wherein the capacitor configured transistor consists of a p-channel MOS transistor, including an n-well coupled to the first terminal of the first capacitor.

5. The circuit of claim 2, wherein the clamp circuit comprises:

a diode configured transistor, coupled between the second terminal of the first capacitor and ground.

6. The circuit of claim 2, wherein the switch comprises:

a diode configured transistor, coupled between the second terminal of the first capacitor and the output node.

7. A memory device circuit coupled to receive a supply voltage and coupled to receive a programming potential for programming operations, said memory device circuit comprising:

a plurality of storage transistors forming an array, a storage transistor in said plurality of storage transistors has a corresponding gate, source and drain, said array including a plurality of local virtual ground lines;

an addressing circuit, coupled to said plurality of storage transistors, having an address signal output, wherein an address signal selects a predetermined storage transistor of said plurality of storage transistors;

a plurality of wordlines, a wordline of said plurality of wordlines being coupled to at least a first gate in a first row of said array;

a plurality of bitlines, a bitline of said plurality of bitlines being coupled to at least a first drain in a first column of said array;

a circuit for selectively electrically coupling a virtual ground terminal and said plurality of local virtual ground lines, said circuit further for selectively electrically coupling said plurality of local virtual ground lines to a positive voltage; and

a negative voltage generator circuit having a negative gate erasing voltage output, said negative gate erasing voltage output being coupled to said plurality of wordlines, wherein a negative gate erasing voltage is generated in response to said programming potential, said negative voltage generator circuit including,

a clock driver having a clock signal output, a clock signal having an amplitude corresponding to said supply voltage, said clock signal being periodic,

a voltage converter, coupled to receive said programming potential and said clock signal, having a converted clock signal output, a converted clock signal having a different amplitude than said supply voltage, and

a charge pump, coupled to receive said converted clock signal, for generating said negative gate erasing voltage in response to said converted clock signal.

8. The memory device circuit of claim 7 wherein said charge pump includes:

a first capacitor having a first terminal and a second terminal, said first terminal coupled to receive said converted clock signal,

a clamp circuit, coupled to said second terminal, to clamp a potential at said second terminal to less than or equal to a maximum potential, and

a switch, coupled between said second terminal and an output node, being conductive when said potential at said second terminal differs from a potential at said output node by a predetermined amount.

9. The memory device circuit of claim 8 wherein said first capacitor includes a configured transistor having a first source and a first drain coupled to said first terminal and a first gate coupled to said second terminal.

10. The memory device of claim 8 wherein said clamp circuit includes a diode configured transistor coupled between said second terminal and a ground.

11. The memory device of claim 8 wherein said switch includes a diode configured transistor coupled between said second terminal and said output node.

12. The memory device of claim 7 wherein said memory device includes a FLASH EPROM circuit.

13. A method of using a first circuit in an memory device, said memory device being coupled to receive a supply voltage and a programming voltage, said memory device including,

an array of transistors, each transistor in said array of transistors having a source, a drain, and a gate,

an addressing circuit coupled to said array of transistors,

a plurality of wordlines being coupled to gates in said array,

a plurality of bitlines being coupled to drains in said array,

a plurality of local virtual ground lines coupled to sources in said array,

a circuit for electrically coupling a virtual ground terminal and said plurality of local virtual ground lines,

said first circuit including a negative voltage generator, said negative voltage generator including a charge pump, said first circuit coupled to said plurality of wordlines and said plurality of local virtual ground lines, and

said method comprising the steps of, in response to receiving a first programming potential, performing the following steps:

said negative voltage generator generating a negative erasing voltage on said plurality of wordlines using said charge pump;

said first circuit causing a positive voltage on said plurality of local virtual ground lines; and

discharging charge from at least a first transistor of said array of transistors.