Plasma CVD process using a very-high-frequency and plasma CVD apparatus

• US 5,534,070 A
• Filed: 11/30/1994
• Issued: 07/09/1996
• Est. Priority Date: 03/31/1993
• Status: Expired due to Fees

• Current Assignee: Canon Ayutthaya Limited (Canon Inc.)
• Original Assignee: Canon Ayutthaya Limited (Canon Inc.)
• Inventors: Okamura, Nobuyuki, Takaki, Satoshi, Yamagami, Atsushi
• Primary Examiner(s): Breneman, R. Bruce
• Assistant Examiner(s): CHANG, JONI YUK YING
• Application Number:
  US08/343,560
• Time in Patent Office: 587 Days
• Field of Search: 118/723 MR, 118/723 E, 118/723 MA, 118/723 MP, 118/723 HC, 118/723 AN, 118/723 DC, 118/723 FE, 118/723 FI, 156/345, 204/298.37, 204/298.16, 204/298.21, 204/298.07, 315/111.81, 315/111.41, 315/111.31, 427/573, 427/588, 427/585
• US Class Current: 118/723.00E
• CPC Class Codes: C23C 16/509 using internal electrodes
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/32532 Electrodes

Abstract

A plasma CVD process comprises conducting film formation in a reaction chamber capable of being substantially vacuumed in which a plurality of cylindrical substrates are spacedly arranged on a concentric circle in said reaction chamber such that a desired discharge space is formed at the central position of the inside of said reaction chamber and a cathode electrode is disposed at the central position of said discharge space, by introducing a film-forming gas into said discharge space and applying a high frequency power from a high frequency power source to said cathode electrode to produce plasma between said plurality of cylindrical substrates and said cathode electrode, whereby forming a deposited film on the surface of each of said plurality of cylindrical substrates, characterized in that an earth shield comprising a non-magnetic material and a soft magnetic material or an insulating material being stacked is disposed at each of the opposite end portions of said cathode electrode, and a very-high-frequency energy of a frequency range of 60 MHz or more from said high frequency power source is applied to said cathode electrode to produce plasma in said reaction chamber whereby forming a deposited film on the surface of each of said plurality of cylindrical substrates. And a VHF plasma CVD apparatus suitable for practicing the plasma CVD process.

Claims

1. A plasma CVD process comprises conducting film formation in a reaction chamber capable of being substantially vacuumed in which a plurality of cylindrical substrates are spacedly arranged on a concentric circle in said reaction chamber such that a desired discharge space is formed at the central position of the inside of said reaction chamber and a cathode electrode is disposed at the central position of said discharge space, by introducing a film-forming raw material gas into said discharge space and applying a high frequency power from a high frequency power source to said cathode electrode to produce plasma between said plurality of cylindrical substrates and said cathode electrode, whereby forming a deposited film on the surface of each of said plurality of cylindrical substrates, characterized in that an earth shield comprising a non-magnetic material and a soft magnetic material or an insulating material being stacked is disposed at each of the opposite end portions of said cathode electrode, and a very-high-frequency energy of a frequency range of 60 MHz or more from said high frequency power source is applied to said cathode electrode to produce plasma in said reaction chamber whereby forming a deposited film on the surface of each of said plurality of cylindrical substrates.

2. A plasma CVD process according to claim 1, wherein the non-magnetic material of the earth shield is positioned on the side of the propagation path for the high frequency power applied to the cathode electrode, and the soft magnetic material of the earth shield is positioned on the side to be exposed to the plasma.

3. A plasma CVD process according to claim 1, wherein the very-high-frequency energy is of a frequency range of 60 MHz to 300 MHz.

4. A plasma CVD process according to claim 3, wherein the very-high-frequency energy is of a frequency range of 100 MHz to 250 MHz.

5. A plasma CVD process according to claim 3, wherein the cathode electrode is of an impedance of 150 Ω

or less at the frequency range.

6. A plasma CVD process according to claim 1, wherein the very-high-frequency is applied in a quantity of 0.001 W/cm² to 10 W/cm² per a unit area of the cathode electrode.

7. A plasma CVD process according to claim 1, wherein the inside of the reaction chamber is maintained at a pressure of 5 Torr or less upon forming the deposited film.

8. A plasma CVD process according to claim 1, wherein each of the cylindrical substrates is maintained at a temperature of 20°

C. to 500°

C.

9. A plasma CVD process according to claim 1, wherein the deposited film is a silicon-containing deposited film.

10. A plasma CVD process according to claim 9, wherein the deposited film is for an electrophotographic photosensitive member.

11. A plasma CVD process according to claim 1, wherein the cathode electrode is arranged at a position which is equally distant from each of the cylindrical substrates in the range of 20 mm to 200 mm.

12. A plasma CVD apparatus comprising a reaction chamber capable of being substantially vacuumed, a gas feed means for introducing a film-forming raw material gas into said reaction chamber, a plurality of rotatable substrate holders spacedly arranged on a concentric circle in said reaction chamber so as to form a discharge space at the central position of the inside of said reaction chamber, a cathode electrode disposed at the central position of said discharge space, and a high frequency power source, wherein a high frequency power from said high frequency power source is applied to said cathode electrode to produce plasma between a plurality of cylindrical substrates each being positioned on one of said plurality of substrate holders and said cathode electrode to thereby form a deposited film on the surface of each of said plurality of cylindrical substrates, characterized in that an earth shield comprising a non-magnetic material and a soft magnetic material or an insulating material being stacked is disposed at each of the opposite end portions of said cathode electrode, and said reaction chamber is designed to allow a very-high-frequency energy of a frequency range of 60 MHz or more from said high frequency power source to be applied to said cathode electrode.

13. A plasma CVD apparatus according to claim 12, wherein the non-magnetic material of the earth shield is positioned on the side of the propagation path for the high frequency power applied to the cathode electrode, and the soft magnetic material of the earth shield is positioned on the side to be exposed to the plasma.

14. A plasma CVD apparatus according to claim 12, wherein the cathode electrode is in a cylindrical form.

15. A plasma CVD apparatus according to claim 12, wherein the frequency of a frequency range of 60 MHz to 300 MHz.

16. A plasma CVD apparatus according to claim 15, wherein the frequency energy is of a frequency range of 100 MHz to 250 MHz.

17. A plasma CVD apparatus according to claim 12, wherein the cathode electrode is arranged at a position which is equally distant from each of the cylindrical substrates in the range of 20 mm to 200 mm.