Artificial multilayer and method of manufacturing the same

• US 5,534,355 A
• Filed: 04/19/1995
• Issued: 07/09/1996
• Est. Priority Date: 11/01/1990
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Hashimoto, Susumu, Inomata, Koichiro, Yusu, Keiichiro, Okuno, Shiho
• Primary Examiner(s): Resan, Stevan A.
• Application Number:
  US08/424,082
• Time in Patent Office: 447 Days
• Field of Search: 428/611, 428/635, 428/662, 428/667, 428/668, 428/672, 428/674, 428/680, 428/681, 428/692, 428/693, 428/694, 428/900, 428/928, 428/336, 428/212, 360/126, 360/113, 324/252, 427/131, 427/547, 427/598
• US Class Current: 428/811.3
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: G11B 5/3903 using magnetic thin film layers or their effects, the films being part of integrated structures
• CPC Class Codes: H01F 10/3281 only by use of asymmetry of the magnetic film pair itself, i.e. so-called pseudospin valve [PSV] structure, e.g. NiFe/Cu/Co
• CPC Class Codes: H01F 41/302 for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices spin-exchange-coupled multilayers H01F10/32
• CPC Class Codes: H10N 50/85 Magnetic active materials
• CPC Class Codes: Y10S 428/90 Magnetic feature
• CPC Class Codes: Y10S 428/928 Magnetic property
• CPC Class Codes: Y10T 428/1129 Super lattice [e.g., giant magneto resistance [GMR] or colossal magneto resistance [CMR], etc.]
• CPC Class Codes: Y10T 428/12632 Four or more distinct components with alternate recurrence of each type component
• CPC Class Codes: Y10T 428/12819 Group VB metal-base component
• CPC Class Codes: Y10T 428/12854 Next to Co-, Fe-, or Ni-base component
• CPC Class Codes: Y10T 428/12861 Group VIII or IB metal-base component
• CPC Class Codes: Y10T 428/12889 Au-base component
• CPC Class Codes: Y10T 428/12903 Cu-base component
• CPC Class Codes: Y10T 428/12944 Ni-base component
• CPC Class Codes: Y10T 428/12951 Fe-base component
• CPC Class Codes: Y10T 428/24942 including components having same physical characteristic in differing degree
• CPC Class Codes: Y10T 428/265 1 mil or less

Abstract

Disclosed is an artificial multilayer in which ferromagnetic layers and nonmagnetic layers are alternatively laminated, wherein a uniaxial magnetic anisotropy is introduced into the ferromagnetic layers in a predetermined direction, thereby controlling the gradient of the relative change of resistivity to the change of external magnetic field. The uniaxial magnetic anisotropy is introduced into the ferromagnetic layers by applying a magnetic field along the surface of ferromagnetic layers during the formation thereof.

Claims

1. A magnetoresistance device comprising:

ferromagnetic and non-magnetic layers which are laminated to form a multilayer structure, wherein said ferromagnetic layers have a uniaxial magnetic anisotropy along the surface of the said multilayer structure which is introduced by a magnetic field, each of said ferromagnetic layers having a thickness between 0.5 and 20 nm;

a substrate having a non-singlecrystalline surface, wherein said ferromagnetic and non-magnetic layers are laminated upon said substrate; and

means, coupled to said multilayer structure, for measuring resistivity of the multilayer structure along a direction that is parallel to the layers of the multilayer structure.

2. The device according to claim 1, wherein said ferromagnetic layers consist of at least one selected from a group consisting of Fe, Co, Ni, and their alloys and compounds, and said nonmagnetic layers consist of at least one selected from a group consisting of V, Cr, Cu, Au, and their alloys and compounds.

3. The device according to claim 1, wherein said ferromagnetic layers consist of a single material.

4. The device according to claim 1, wherein said ferromagnetic layers consist of different materials.

5. The artificial multilayer according to claim 4, wherein said materials forming the ferromagnetic layers differ from each other in the magnitude of the magnetic anisotropy.

6. The device according to claim 1, wherein the thickness of each of said nonmagnetic layers ranges between 0.5 to 20 nm, and the entire thickness of the laminated layers ranges between 30 to 500 nm.

7. The device according to claim 1, wherein the direction of the uniaxial magnetic anisotropy in a first ferromagnetic layer differs from that in a second ferromagnetic layer adjacent to said first ferromagnetic layer.

8. The device according to claim 7, wherein the directions of the uniaxial magnetic anisotropies of the two adjacent ferromagnetic layers form an angle of 30°

to 90°

.

9. The device according to claim 1, wherein said substrate is a glass substrate.

10. A magnetoresistance device according to claim 1, wherein:

said means for measuring resistivity comprises a source of electrical current and a voltage meter.

11. A device according to claim 1, wherein said ferromagnetic layers are non-singlecrystalline layers.

12. A device according to claim 1, wherein said substrate is non-singlecrystalline.

13. A magnetoresistance device comprising:

ferromagnetic and non-magnetic layers which are alternately laminated to form a multilayer structure, wherein said ferromagnetic layers have a uniaxial magnetic anisotropy along the surface of said multilayer structure which is introduced by a magnetic field, each of said ferromagnetic layers having a thickness between 0.5 and 20 nm;

a substrate having a non-singlecrystalline wherein said ferromagnetic and non-magnetic layers are laminated upon said substrate; and

means, coupled to said multilayer structure, for measuring resistivity of said multilayer structure along a direction that is parallel to the layers of the multilayer structure.

14. A magnetoresistance device according to claim 13, wherein:

said means for measuring resistivity comprises a source of electrical current and a voltage meter.

15. A device according to claim 13, wherein said ferromagnetic layers are non-singlecrystalline layers.

16. A device according to claim 13, wherein said substrate is non-singlecrystalline.

18. A device according to claim 15, wherein said ferromagnetic layers are non-singlecrystalline layers.

17. A magnetoresistance device, comprising:

a multilayer structure having a major surface, said multilayer structure formed from a lamination of ferromagnetic and non-magnetic layers upon a substrate having a non-singlecrystalline surface, wherein said ferromagnetic layers have uniaxial magnetic anisotropy in a direction that is parallel to the major surface of the multilayer structure Which is introduced by a magnetic field; and

means, coupled to said multilayer structure, for measuring resistivity of the multilayer structure.

19. A device according to claim 17, wherein said substrate is non-singlecrystalline.

20. A magnetoresistance device, comprising:

a multilayer structure having a major surface, said multilayer structure formed from ferromagnetic and nonmagnetic layers that are alternately laminated upon a substrate having a non-singlecrystalline surface, wherein said ferromagnetic layers have a uniaxial magnetic anisotropy that is parallel to the major surface of the multilayer structure which is introduced by a magnetic field; and

means, coupled to said multilayer structure, for measuring resistivity of the multilayer structure.

21. A device according to claim 20, wherein said ferromagnetic layers are non-singlecrystalline layers.

22. A device according to claim 20, wherein said substrate is non-singlecrystalline.

23. A magnetoresistance device for measuring a change in resistivity due to the presence of a magnetic field where the device is located, comprising:

a substrate having a non-singlecrystalline surface;

a multilayer structure formed from a lamination of ferromagnetic and non-magnetic layers upon said substrate, said lamination having a major surface; and

wherein

said ferromagnetic layers have a uniaxial magnetic anisotropy that is parallel to the major surface of the lamination which is introduced by a magnetic field.

24. A device according to claim 23, further comprising:

a means for measuring a change in resistivity that functions in the presence of a magnetic field of between zero and 1500 Oersted., of up to about ten percent of the resistivity of the multilayer structure.

25. A device according to claim 23, wherein said ferromagnetic layers are non-singlecrystalline layers.

26. A device according to claim 23, wherein said substrate is non-singlecrystalline.

27. A magnetoresistance device for measuring a change in resistivity due to the presence of a magnetic field where the device is located, comprising:

a substrate having a non-singlecrystalline surface;

a multilayer structure formed from ferromagnetic and non-magnetic layers which are alternately laminated upon said substrate to form a lamination that has a major surface; and

wherein

said ferromagnetic layers have a uniaxial magnetic anisotropy that is parallel to the major surface of the lamination which is introduced by a magnetic field.

28. A device according to claim 27, further comprising:

a means for measuring a change in resistivity that functions in the presence of a magnetic field of between zero and 500 Oersted., of up to about ten percent of the resistivity of the multilayer structure.

29. A device according to claim 27, wherein said ferromagnetic layers are non-singlecrystalline layers.

30. A method of manufacturing a magnetoresistance device comprising ferromagnetic and non-magnetic layers on a substrate, having a non-singlecrystalline surface said ferromagnetic and non-magnetic layers being alternately laminated one upon the other, said method comprising the steps of:

depositing said ferromagnetic layers and non-magnetic layers upon said substrate, each of said ferromagnetic layers having a thickness between 0.5 and 20 nm; and

introducing a uniaxial magnetic anisotropy into said ferromagnetic layers by applying a magnetic filed along the surface of said ferromagnetic layers.

31. The method according to claim 30, wherein a magnetic field is applied along the surface of said ferromagnetic layers during the formation thereof.

32. The method according to claim 30, wherein a magnetic field is applied along the surface of said ferromagnetic layer while heat treating after the formation of said multilayer.

33. The method according to claim 30, wherein said ferromagnetic layers consist of at least one selected from a group consisting of Fe, Co, Ni, and their alloys and compounds, and said nonmagnetic layers consist of at least one selected from a group consisting of V, Cr, Cu, Au, and their alloys and compounds.

34. The method according to claim 30, wherein said ferromagnetic layers consist of a single material.

35. The method according to claim 30, wherein said ferromagnetic layers consist of different materials.

36. The method according to claim 35, wherein said ferromagnetic layers differ from each other in the magnitude Of the magnetic anisotropy.

37. The method according to claim 30, wherein the thickness of each of said nonmagnetic layers ranges between 0.5 to 20 nm, and the entire thickness of the laminated layers ranges between 30 to 500 nm.

38. The method according to claim 30, wherein the direction of the uniaxial magnetic anisotropy in a first ferromagnetic layer differs from that in a second ferromagnetic layer adjacent to said first ferromagnetic layer.

39. The method according to claim 38, wherein the directions of the uniaxial magnetic anisotropies of the two adjacent ferromagnetic layers form an angle of 30°

to 90°

.

40. The method according to claim 30, wherein said non-singlecrystalline substrate is a glass substrate.

41. A method according to claim 30, wherein the means for measuring resistivity comprises a source of electrical current and a voltage meter.

42. A method according to claim 30, wherein said ferromagnetic layers are non-singlecrystalline layers.

43. A method according to claim 30, wherein said substrate is non-singlecrystalline.

44. A method of manufacturing a magnetoresistance device comprising ferromagnetic and non-magnetic layers, said ferromagnetic and non-magnetic layers being alternately laminated one upon the other to form a lamination having a major surface, said method comprising the steps of:

depositing said ferromagnetic and non-magnetic layers on a substrate having a non-singlecrystalline surface;

introducing uniaxial magnetic anisotropy into said ferromagnetic layers by applying a magnetic field that is parallel to the major surface of the lamination; and

connecting a means for measuring resistivity to at least one of the non-magnetic layers.

45. A method according to claim 44, wherein said ferromagnetic layers are non-singlecrystalline layers.

46. A method according to claim 44, wherein said substrate is non-singlecrystalline.

47. A method of measuring a magnetic field with a magnetoresistance device, comprising the steps of:

forming a magnetoresistance device comprising a multilayer structure comprising a substrate having a non-single crystalline surface and a lamination of ferromagnetic and non-magnetic layers on said substrate, said lamination having a major surface, and said ferromagnetic layers having uniaxial magnetic anisotropy introduced by deposition in a magnetic field or annealing in a magnetic field along said major surface;

disposing the multilayer structure in a first magnetic field; and

measuring a resistivity of the multilayer structure while the multilayer structure is in the first magnetic field.

48. A method according to claim 47, wherein the ferromagnetic and non-magnetic layers are alternately laminated.

49. A device according to claim 48, wherein said substrate is non-singlecrystalline.

50. A method according to claim 47, wherein the resistivity is measured along a direction that is parallel to the layers of the multilayer structure.

51. A method according to claim 47, wherein said ferromagnetic layers are non-singlecrystalline layers.

52. A method according to claim 47, wherein said substrate is non-singlecrystalline.