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Artificial multilayer and method of manufacturing the same

  • US 5,534,355 A
  • Filed: 04/19/1995
  • Issued: 07/09/1996
  • Est. Priority Date: 11/01/1990
  • Status: Expired due to Term
First Claim
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1. A magnetoresistance device comprising:

  • ferromagnetic and non-magnetic layers which are laminated to form a multilayer structure, wherein said ferromagnetic layers have a uniaxial magnetic anisotropy along the surface of the said multilayer structure which is introduced by a magnetic field, each of said ferromagnetic layers having a thickness between 0.5 and 20 nm;

    a substrate having a non-singlecrystalline surface, wherein said ferromagnetic and non-magnetic layers are laminated upon said substrate; and

    means, coupled to said multilayer structure, for measuring resistivity of the multilayer structure along a direction that is parallel to the layers of the multilayer structure.

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