Method for making multichip circuits using active semiconductor substrates

• US 5,534,465 A
• Filed: 01/10/1995
• Issued: 07/09/1996
• Est. Priority Date: 01/10/1995
• Status: Expired due to Term

• Current Assignee: Bell Semiconductor, LLC (Hilco Inc. (d/b/a Hilco Global))
• Original Assignee: AT&T Corporation (AT&T, Inc.)
• Inventors: Frye, Robert C., Tai, King L.
• Primary Examiner(s): Thomas, Tom
• Assistant Examiner(s): Picardat, Kevin M.
• Application Number:
  US08/370,902
• Time in Patent Office: 546 Days
• Field of Search: 437/209, 437/211, 437/214, 437/215, 437/217, 437/218, 437/219, 437/220, 257/778, 361/761, 361/762, 361/763, 361/764, 361/765, 361/766
• US Class Current: 438/108
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2225/06527 Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
• CPC Class Codes: H01L 2225/06586 Housing with external bump or bump-like connectors
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]

Abstract

In accordance with the invention, a multichip circuit is fabricated by providing an active semiconductor substrate comprising a set of isolated components including active components such as transistors, forming on a surface of the substrate a plurality of paths incorporating components from the substrate for interconnecting a plurality integrated circuit devices, and mounting the ICs on the surface in contact with their respectively appropriate paths. The preferred active substrate is similar in structure to a silicon integrated circuit except that the circuit components are interconnected only by the paths interconnecting the ICs. Advantageously the ICs are surface mounted on the substrate.

Claims

1. A method for making a circuit comprising a plurality of integrated circuit chips comprising the steps of:

providing a semiconductor substrate having formed therein a set of isolated and unconnected electrical components for interconnecting said circuit chips, said components including at least one bipolar transistor;

forming a plurality of electrical paths for interconnecting said circuit chips, said electrical paths including electrical components in said semiconductor substrate; and

mounting said chips on said substrate in electrical contact with said electrical paths to form a circuit comprising said interconnected plurality of chips.

3. The method of claim 1 wherein said chips are mounted on said substrate by flip-chip surface mounting.

4. The method of claim 1 wherein said bipolar transistor is an npn transistor.

2. The method of claim I wherein said semiconductor substrate is a silicon substrate and said set of electrical components further comprises resistors and capacitors.

5. The method of claim 2 wherein said resistors are TaSi resistors.