Semiconductor device

• US 5,534,727 A
• Filed: 09/23/1994
• Issued: 07/09/1996
• Est. Priority Date: 07/21/1992
• Status: Expired due to Fees

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation), Mitsubishi Electric Corporation
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Inoue, Akira
• Primary Examiner(s): Hille, Rolf
• Assistant Examiner(s): OSTROWSKI, DAVID M
• Application Number:
  US08/312,275
• Time in Patent Office: 655 Days
• Field of Search: 257/630, 257/662, 257/664, 257/666, 257/659, 257/691, 257/508, 257/668, 257/686, 361/748, 361/749, 361/750, 361/751
• US Class Current: 257/659
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 23/3135 Double encapsulation or coating and encapsulation
• CPC Class Codes: H01L 23/49838 Geometry or layout
• CPC Class Codes: H01L 23/4985 Flexible insulating substrates H01L23/49572 and H01L23/49855 take precedence
• CPC Class Codes: H01L 23/552 Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 23/645 Inductive arrangements H01L23/647, H01L23/66 take precedence
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01023 Vanadium [V]
• CPC Class Codes: H01L 2924/01068 Erbium [Er]
• CPC Class Codes: H01L 2924/01072 : Hafnium [Hf]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/07802 : not being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/30111 : matching
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H05K 1/0393 : Flexible materials H05K1/038 takes precedence; specific organic compositions are classified in H05K1/0313 and subgroups
• CPC Class Codes: H05K 2203/1327 : Moulding over PCB locally or completely applying non-metallic protective coatings for encapsulating mounted components H05K3/284

Abstract

A semiconductor device including an insulating film substrate having a surface, a high frequency semiconductor chip disposed on the surface, and circuit elements disposed on the surface and connected to the semiconductor chip wherein the insulating film substrate is bent into a U-shape, laminated, and encapsulated with a resin. The package of the device is miniaturized.

Claims

1. A semiconductor device comprising:

a first insulating film substrate having a front surface and a rear surface;

a high frequency semiconductor chip and circuit elements connected to said semiconductor chip and disposed on one of said front and rear surfaces of said first insulating film substrate;

a second insulating film substrate having a front surface and a rear surface;

a circuit element on said rear surface of said second insulating film substrate wherein said first film substrate and said second film substrate are laminated, connected to each other, and encapsulated in a resin; and

an electromagnetic shielding layer disposed on said second film substrate for electromagnetically separating said second film substrate from said first film substrate wherein said rear surface of said first film substrate is opposite one of said front and rear surfaces of said second film substrate and said high frequency semiconductor chip and circuit elements on said first and second film substrates are electrically connected to each other via through holes.

2. A semiconductor device comprising:

a first insulating film substrate having a front surface and a rear surface;

a high frequency semiconductor chip and circuit elements connected to said semiconductor chip and disposed on one of said front and rear surfaces of said first insulating film substrate;

a second insulating film substrate having a front surface and a rear surface; and

a circuit element on said rear surface of said second insulating film substrate wherein said first film substrate and said second film substrate are laminated, connected to each other, and encapsulated in a resin wherein said first film substrate has a first hardness and said second film substrate has a second hardness and the first hardness is larger than the second hardness.

3. The semiconductor device of claim 2 wherein said semiconductor chip is covered with a material having a dielectric constant lower than the dielectric constant of said resin.