Multi-phase DC plasma processing system

• US 5,535,906 A
• Filed: 01/30/1995
• Issued: 07/16/1996
• Est. Priority Date: 01/30/1995
• Status: Expired due to Term

• Current Assignee: Advanced Energy Industries Incorporated
• Original Assignee: Advanced Energy Industries Incorporated
• Inventors: Drummond, Geoffrey N.
• Primary Examiner(s): POWELL, WILLIAM A
• Application Number:
  US08/380,621
• Time in Patent Office: 533 Days
• Field of Search: 216/67, 216/71, 156/643.1, 156/662.1, 156/345 P, 437/228 PE, 204/298.06, 204/298.34, 363/15, 363/17
• US Class Current: 216/67
• CPC Class Codes: H01J 2237/332 Coating
• CPC Class Codes: H01J 2237/334 Etching
• CPC Class Codes: H01J 2237/335 Cleaning
• CPC Class Codes: H01J 37/32009 Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources plasma generation in general H05H1/24
• CPC Class Codes: H01J 37/32018 Glow discharge
• CPC Class Codes: H01J 37/32027 DC powered
• CPC Class Codes: H01J 37/32045 Circuits specially adapted for controlling the glow discharge
• CPC Class Codes: H01J 37/3299 Feedback systems
• CPC Class Codes: H02M 1/007 Plural converter units in cascade push-pull DC/DC converters with pre-regulator H02M3/3374; DC-AC converters following a DC-DC stage including a high frequency transformer H02M7/4807; DC-AC converters following a DC-DC conversion stage generating periodically varying voltages H02M7/4826
• CPC Class Codes: H02M 3/015 with means for adaptation of resonance frequency, e.g. by modification of capacitance or inductance of resonance circuit
• CPC Class Codes: H02M 3/335 using semiconductor devices only
• CPC Class Codes: H02M 3/33573 Full-bridge at primary side of an isolation transformer
• CPC Class Codes: H02M 7/06 using discharge tubes without control electrode or semiconductor devices without control electrode

Abstract

A multiple phase switch mode plasma processing system generates alternating signals which may be coincidentally rectified or otherwise converted from AC to DC. The resulting DC signal has extremely reduced ripple and thus greatly reduced need for filtering of the generated DC output. Direct connection of the DC output is possible through a coupling having no substantially no reactive component. In situations where filtering is desirable the filtering can be reduced to about 1% of the energy supplied per cycle. This allows more accurate control of the power supply to the processing plasma. In addition, voltage regulation through frequency variation, resonance, circuit variation, and pulse width modulation can be utilized individually or in combination. The phase relationship of the multiple alternating signals may be determined so as to allow a regular phase relationship and thus minimize the small amount of ripple remaining.

Claims

1. A method of precisely processing a substrate by powering a DC processing plasma comprising the steps of:

a. supplying a DC input voltage;

b. generating multiple alternating signals from said DC input voltage;

c. converting said alternating signals to a single DC output;

d. applying said DC output to said processing plasma; and

e. processing said substrate through action of said processing plasma.

6. A method of precisely processing a substrate by powering a DC processing plasma as described in claim 1, 4, or 5 wherein said multiple square wave signals have a regular phase relationship.

7. A method of precisely processing a substrate by powering a DC processing plasma as described in claim 6 wherein said step of simultaneously driving multiple switches results in an odd number of multiple square wave signals and wherein said regular phase relationship of said multiple square wave signals is 360 degrees divided by said odd number.

8. A method of precisely processing a substrate by powering a DC processing plasma as described in claim 6 wherein said step of simultaneously driving multiple switches results in an even number of multiple square wave signals and wherein said regular phase relationship of said multiple square wave signals is 180 degrees divided by said even number.

9. A method of precisely processing a substrate by powering a DC processing plasma as described in claim 1, 4, or 5 wherein said step of generating multiple alternating signals from said DC input voltage comprises the step of generating three alternating signals sequenced 120 degrees apart.

10. A method of precisely processing a substrate by powering a DC processing plasma as described in claim 9 wherein said step of converting said alternating signals to a DC output comprises the step of coincidentally rectifying said multiple alternating signals.

11. A method of precisely processing a substrate by powering a DC processing plasma as described in claim 1, 4, or 5 wherein said step of supplying a DC input voltage comprises the steps of:

a. accepting at least one alternating input; and

b. producing a DC input voltage from said alternating input.

12. A method of precisely processing a substrate by powering a DC processing plasma as described in claim 11 wherein said alternating input has an input frequency and wherein said multiple alternating signals have a frequency which is substantially higher than said input frequency.

13. A method of precisely processing a substrate by powering a DC processing plasma as described in claim 6 wherein said step of supplying a DC input voltage comprises the steps of:

a. accepting at least one alternating input; and

b. producing a DC input voltage from said alternating input.

14. A method of precisely processing a substrate by powering a DC processing plasma as described in claim 13 wherein said alternating input has an input frequency and wherein multiple alternating signals have a frequency which is substantially higher than said input frequency.

15. A method of precisely processing a substrate by powering a DC processing plasma as described in claim 9 wherein said step of supplying a DC input voltage comprises the steps of:

a. accepting at least one alternating input; and

b. producing a DC input voltage from said alternating input.

16. A method of precisely processing a substrate by powering a DC processing plasma as described in claim 15 wherein said alternating input has an input frequency and wherein multiple alternating signals have a frequency which is a substantially higher than said input frequency.

20. A method of precisely processing a substrate by powering a DC processing plasma as described in claim 1 wherein said step of applying said DC output to said processing plasma comprises the step of applying said DC output directly to said processing plasma.

21. A method of precisely processing a substrate by powering a DC processing plasma as described in claim 6 wherein said step of applying said DC output to said processing plasma comprises the step of applying said DC output directly to said processing plasma.

22. A method of precisely processing a substrate by powering a DC processing plasma as described in claim 10 wherein said step of applying said DC output to said processing plasma comprises the step of applying said DC output directly to said processing plasma.

27. A method of precisely processing a substrate by powering a DC processing plasma as described in claim 1 wherein said step of applying said DC output to said processing plasma consists essentially of the step of transmitting said DC output to said processing plasma through a connection having substantially no reactive component.

28. A method of precisely processing a substrate by powering a DC processing plasma as described in claim 6 wherein said step of applying said DC output to said processing plasma consists essentially of the step of transmitting said DC output to said processing plasma through a connection having substantially no reactive component.

29. A method of precisely processing a substrate by powering a DC processing plasma as described in claim 10 wherein said step of applying said DC output to said processing plasma consists essentially of the step of transmitting said DC output to said processing plasma through a connection having substantially no reactive component.

31. A method of precisely processing a substrate by powering a DC processing plasma as described in claim 1 or 5 wherein said step of generating multiple alternating signals comprises the step of establishing a variable drive frequency and further comprising the step of varying said variable drive frequency while accomplishing said step of processing said substrate through action of said processing plasma.

32. A method of precisely processing a substrate by powering a DC processing plasma as described in claim 29 wherein said step of generating multiple alternating signals comprises the step of establishing a variable drive frequency and further comprising the step of varying said variable drive frequency while accomplishing said step of processing said substrate through action of said processing plasma.

33. A method of precisely processing a substrate by powering a DC processing plasma as described in claim 31 wherein said DC output applied to said processing plasma has a processing voltage and further comprising the step of sensing said processing voltage applied to said plasma and wherein said step of varying said variable drive frequency is accomplished in response to said step of sensing said processing voltage applied to said plasma.

2. A method of precisely processing a substrate by powering a DC processing plasma as described in claim I wherein said step of converting said alternating signals to a DC output comprises the step of coincidentally rectifying said multiple alternating signals.

3. A method of precisely processing a substrate by powering a DC processing plasma as described in claim I wherein said step of generating multiple alternating signals from said DC input voltage comprises the step of switching said DC input voltage.

4. A method of precisely processing a substrate by powering a DC processing plasma as described in claim 3 wherein said step of switching said DC input voltage comprises the step of simultaneously driving multiple switch circuits,

5. A method of precisely processing a substrate by powering a DC processing plasma as described in claim 4 wherein said step of simultaneously driving multiple switches results in multiple square wave signals each having a switching frequency and further comprising the step of applying each of said multiple square wave signals to a circuit which is oscillatory at said switching frequency.

23. A method of precisely processing a substrate by powering a DC processing plasma as described in claim 5 and further comprising the step of storing energy after accomplishing said step of converting said alternating signals to a single DC output.

24. A method of precisely processing a substrate by powering a DC processing plasma as described in claim 23 wherein said multiple alternating signals supply energy over one period of said switching frequency and wherein said step of storing energy comprises the step of storing no more than about 1% of said energy supplied by said multiple alternating signals over one period of said switching frequency.

34. A method of precisely processing a substrate by powering a DC processing plasma as described in claim 5 wherein said multiple square wave signals have a pulse width, wherein said step of generating multiple alternating signals further comprises the step of establishing a variable drive frequency and further comprising the steps of:

a. varying said variable drive frequency while accomplishing said step of processing said substrate through action of said processing plasma; and

b. modulating said pulse width while accomplishing said step of processing said substrate through action of said processing plasma.

17. A method of precisely processing a substrate by powering a DC processing plasma comprising the steps of:

a. supplying a DC input voltage;

b. switching said DC input voltage to generate at least one alternating signal from said DC input voltage;

c. converting said alternating signal to a DC output;

d. applying said DC output directly to said processing plasma; and

e. processing said substrate through action of said processing plasma.

18. A method of precisely processing a substrate by powering a DC processing plasma as described in claim 17 wherein said step of converting said alternating signal to a DC output comprises the step of coincidentally rectifying said multiple alternating signals.

19. A method of precisely processing a substrate by powering a DC processing plasma as described in claim 17 wherein said alternating signal has a switching frequency, wherein said step of switching said DC input voltage results in a square wave signal, and further comprising the step of applying said square wave signal to a circuit which is oscillatory at said switching frequency.

25. A method of precisely processing a substrate by powering a DC processing plasma comprising the steps of:

a. supplying a DC input voltage;

b. switching said DC input voltage to generate at least one alternating signal;

c. converting said alternating signal to a DC output;

e. applying said DC output to said processing plasma wherein said step of applying said DC output to said processing plasma consists essentially of the step of transmitting said DC output to said processing plasma through a connection having substantially no reactive component; and

f. processing said substrate through action of said processing plasma.

26. A method of precisely processing a substrate by powering a DC processing plasma as described in claim 25 wherein said step of converting said alternating signal to a DC output comprises the step of coincidentally rectifying said multiple alternating signals.

30. A method of precisely processing a substrate by powering a DC processing plasma as described in claim 25 wherein said alternating signal has a switching frequency, wherein said step of switching said DC input voltage results in a square wave signal, and further comprising the step of applying said square wave signal to a circuit which is oscillatory at said switching frequency.

35. A method of precisely processing a substrate by powering a DC processing plasma as described in claim 5 or 30 wherein said circuit which is oscillatory at said switching frequency has a resonance frequency and further comprising the step of varying said resonance frequency while accomplishing said step of processing said substrate through action of said processing plasma.

36. A method of precisely processing a substrate by powering a DC processing plasma as described in claim 35 wherein said DC output applied to said processing plasma has a processing voltage and further comprising the step of sensing said processing voltage applied to said plasma and wherein said step of varying said resonance frequency is accomplished in response to said step of sensing said processing voltage applied to said plasma.

37. A method of precisely processing a substrate by powering a DC processing plasma as described in claim 35 wherein said square wave signal has a pulse width and further comprising the step of modulating said pulse width while accomplishing said step of processing said substrate through action of said processing plasma.

38. A plasma processing system comprising:

a. DC power source which supplies a DC input voltage;

b. a multiple AC generator responsive to said DC power source and which outputs multiple alternating signals;

c. an AC to DC converter responsive to said multiple alternating signals and which has a single DC output;

d. a coupling connected to said DC output;

e. a plasma processing chamber connected to said coupling and which comprises;

1) an anode responsive to said coupling; and

2) a cathode responsive to said coupling.

39. A plasma processing system as described in claim 38 wherein said AC to DC converter comprises a rectifier responsive to each of said multiple alternating signals.

40. A plasma processing system as described in claim 38 wherein said multiple AC generator comprises:

a. a plurality of switch circuits responsive to said DC power source wherein each switch circuit acts upon said DC input voltage to create an alternating signal; and

b. at least one switch drive connected to said plurality of switch circuits and having a switching frequency.

41. A plasma processing system as described in claim 40 wherein said multiple AC generator further comprises at least one circuit which is oscillatory at the switching frequency and which is responsive to said alternating signal created by said switch circuit.

42. A plasma processing system as described in claim 41 wherein said plurality of switch circuits comprises a plurality of full bridge circuits.

43. A plasma processing system as described in claim 41 wherein said plurality of switch circuits comprises a plurality of half bridge circuits.

44. A plasma processing system as described in claim 40 or 43 wherein said multiple alternating signals have a regular phase relationship.

45. A plasma processing system as described in claim 44 wherein there are an odd number of multiple alternating signals and wherein the regular phase relationship of said multiple alternating signals is 360 degrees divided by the number of said multiple alternating signals.

46. A plasma processing system as described in claim 44 wherein there are an even number of multiple alternating signals and wherein the regular phase relationship of said multiple alternating signals is 180 degrees divided by the number of said multiple alternating signals.

47. A plasma processing system as described in claim 40 wherein said switching frequency has a switching time period and wherein said multiple AC generator comprises:

a. a first bridge switching circuit having a first bridge input attached to said DC input voltage, having at least two first bridge switches which are responsive to said switch drive so as to be sequentially activated at times which differ by one half of said switching time period, and having a first bridge output;

b. a second bridge switching circuit having a second bridge input attached to said DC input voltage, having at least two second bridge switches which are responsive to said switch drive so as to be sequentially activated at times which differ by one half of said switching time period, and having a second bridge output;

c. a third bridge switching circuit having a third bridge input attached to said DC input voltage, having at least two third bridge switches which are responsive to said switch drive so as to be sequentially activated at times which differ by one half of said switching time period, and having a third bridge output, and wherein said first, second, and third bridge switching circuits are sequenced 120 degrees apart; and

d. a rectifier which is responsive to said first, second, and third bridge outputs.

48. A plasma processing system as described in claim 47 and further comprising a transformer device having three transformer outputs which correspond to said first, second, and third bridge outputs and to which said rectifier is responsive.

49. A plasma processing system as described in claim 47 wherein each said bridge switching circuit comprises:

a. a circuit which is oscillatory at the switching frequency; and

b. a half bridge circuit.

50. A plasma processing system as described in claim 47 wherein each said bridge switching circuit comprises:

a. a circuit which is oscillatory at the switching frequency; and

b. a full bridge circuit.

51. A plasma processing system as described in claim 38 or 40 wherein said DC power source comprises:

a. at least one alternating inputs; and

b. at least one rectifier responsive to said alternating input.

52. A plasma processing system as described in claim 49 or 50 wherein said DC power source comprises:

a. at least one alternating input having an input frequency; and

b. at least one rectifier responsive to said alternating input;

and wherein said switching frequency is a substantially higher frequency than said input frequency.

53. A plasma processing system as described in claim 40 and further comprising a filter connected to said single DC output.

54. A plasma processing system as described in claim 53 wherein said filter is capable of storing energy, wherein said multiple alternating signals supply energy over one period of said switching frequency, and wherein the energy capable of being stored by said filter is no more than about 1% of the energy supplied by said multiple alternating signals over one period of said switching frequency.

56. A plasma processing system as described in claim 38 or 40 wherein said coupling consists essentially of a connection having substantially no reactive component.

57. A plasma processing system as described in claim 44 wherein said coupling consists essentially of a connection having substantially no reactive component.

58. A plasma processing system as described in claim 52 wherein said coupling consists essentially of a connection having substantially no reactive component.

60. A plasma processing system as described in claim 40, 41, or 55 wherein said DC output has a processing voltage and further comprising:

a. a frequency controller; and

b. a variable frequency switch drive responsive to said frequency controller.

61. A plasma processing system as described in claim 58 wherein said DC output has a processing voltage and further comprising:

a. a frequency controller; and

b. a variable frequency switch drive responsive to said frequency controller.

62. A plasma processing system as described in claim 60 and further comprising a voltage sensor responsive to said processing voltage and to which said frequency controller is responsive.

63. A plasma processing system as described in claim 60 wherein said switch circuit creates a square wave signal having a pulse width and further comprising a pulse width controller to which said switch circuit is responsive.

64. A plasma processing system as described in claim 41 or 59 and further comprising a variable resonance circuit controller, wherein said circuit which is oscillatory at the switching frequency comprises a variable resonance circuit which is responsive to said variable resonance circuit controller.

65. A plasma processing system as described in claim 64 wherein said DC output has a processing voltage and further comprising a voltage sensor responsive to said processing voltage and to which said variable resonance circuit controller is responsive.

66. A plasma processing system as described in claim 65 wherein said switch circuit creates a square wave signal having a pulse width and further comprising a pulse width controller to which said switch circuit is responsive.

55. A plasma processing system comprising:

a. DC power source which supplies a DC input voltage;

b. at least one switch circuit responsive to said DC power source wherein said switch circuit acts upon said DC input voltage to create an alternating signal;

c. at least one switch drive connected to said switch circuit and having a switching frequency;

d. an AC to DC converter responsive to said alternating signal and which has a DC output;

e. a coupling connected to said DC output and which consists essentially of a connection having substantially no reactive component;

f. a plasma processing chamber connected to said coupling and which comprises;

1) an anode responsive to said coupling; and

2) a cathode responsive to said coupling.

59. A plasma processing system as described in claim 55 wherein said switch circuit comprises a circuit which is oscillatory at the switching frequency.