Multi-wavelength gain-coupled distributed feedback laser array with fine tunability

• US 5,536,085 A
• Filed: 03/30/1995
• Issued: 07/16/1996
• Est. Priority Date: 03/30/1995
• Status: Expired due to Term

• Current Assignee: Oclaro Technology Ltd. (rep office-Hong Kong) (Lumentum Holdings Inc.)
• Original Assignee: Northern Telecom Limited (Nortel Networks Corporation)
• Inventors: Huang, Weiping, Sarangan, Andrew M., Makino, Toshihiko, Li, Guo P.
• Primary Examiner(s): Davie, James W.
• Application Number:
  US08/413,555
• Time in Patent Office: 474 Days
• Field of Search: 372/20, 372/23, 372/45, 372/46, 372/50, 372/96
• US Class Current: 372/50.12
• CPC Class Codes: H01S 5/0612 controlled by temperature
• CPC Class Codes: H01S 5/0622 Controlling the frequency of the radiation
• CPC Class Codes: H01S 5/1228 DFB lasers with a complex coupled grating, e.g. gain or loss coupling
• CPC Class Codes: H01S 5/32391 based on In(Ga)(As)P
• CPC Class Codes: H01S 5/4031 Edge-emitting structures
• CPC Class Codes: H01S 5/4087 emitting more than one wavelength

Abstract

A multi-wavelength laser array having a plurality of gain-coupled distributed feedback ridge waveguide lasers. The operational wavelength of each laser is established by selecting a width of the ridge waveguide in the range 1.6 μm to 5.2 μm. Fine tuning of each central wavelength is achieved by thermal power to selected waveguides via Titanium thin film resistors integrated into the laser array. A wavelength range of 9 nm is demonstrated utilizing a sixteen element array.

Claims

1. A multi-wavelength semiconductor laser array comprising:

a plurality of distributed feedback, gain coupled, ridge waveguide semiconductor laser diodes

longitudinally spaced on a common substrate, each of said laser diodes having active region capable of generating light and gain for lasing action in response to an injection current, a gain coupling grating in the active region, a buffer layer on said grating, a current confining ridge waveguide in said buffer layer, contacts on each ridge waveguide and substrate and resistive heater means associated with each laser, whereby the operational wavelength of the light generated by lasing action in each laser is a function of the width of each ridge waveguide, said operational wavelength being dynamically tunable by said resistive heater means associated with each laser.

2. A multi-wavelength laser array as defined in claim 1 said laser diodes being equally spaced on said common substrate.

3. A multi-wavelength laser array as defined in claim 2, the center to center spacing of respective lasers being 250 μ

m.

4. A multi-wavelength laser array as defined in claim 3 said resistive heater means being a thin film resistor.

5. A multi-wavelength laser array as defined in claim 4, said thin film resistor being titanium.

6. A multi-wavelength laser array as defined in claim 4, said thin film resistor being nichrome.

7. A multi-wavelength laser array as defined in claim 4, said thin film resistor being platinum.

8. A multi-wavelength array as defined in claim 4 said semiconductor being InGaAsP/InP.

9. A multi-wavelength laser array as defined in claim 8 the width of said ridge waveguides being in the range of 1.6 μ

m to 5.2 μ

m.

10. A multi-wavelength laser array as defined in claim 9, the operational wavelength differential being approximately 9 nm.