Method of making wide band gap field emitter

• US 5,536,193 A
• Filed: 06/23/1994
• Issued: 07/16/1996
• Est. Priority Date: 11/07/1991
• Status: Expired due to Term

• Current Assignee: SI Diamond Technology, Inc. (Nano Magic, Inc.)
• Original Assignee: Microelectronics and Computer Technology Corporation
• Inventors: Kumar, Nalin
• Primary Examiner(s): Ramsey, Kenneth J.
• Application Number:
  US08/264,386
• Time in Patent Office: 754 Days
• Field of Search: 445/24, 445/50, 445/58
• US Class Current: 445/50
• CPC Class Codes: H01J 1/304 Field-emissive cathodes
• CPC Class Codes: H01J 1/3042 microengineered, e.g. Spindt-type
• CPC Class Codes: H01J 2201/30403 characterised by the emitter shape
• CPC Class Codes: H01J 2201/30457 Diamond
• CPC Class Codes: H01J 9/025 of field emission cathodes

Abstract

A field emitter comprising an exposed wide band gap emission area in contact with and protruding from a planar surface of a conductive metal, and a method of making is disclosed. Suitable wide band gap materials (2.5-7.0 electron-volts) include diamond, aluminum-nitride and gallium-nitride; suitable conductive metals include titanium, tungsten, gold and graphite. The method includes disposing the wide band gap material on a substrate, disposing the conductive metal on the wide band gap material, and etching the conductive metal to expose wide band gap emission areas. The emission areas are well suited for large area flat panel displays.

Claims

1. A method of fabricating a field emitter, comprising the steps of:

disposing a wide band gap material on a substrate;

disposing a conductive metal on the wide band gap material; and

etching the conductive metal thereby exposing wide band gap emission areas which contact and protrude from a substantially planar surface of the conductive metal.

2. The method of claim 1 wherein the wide band gap material has a band gap in the range of approximately 2.5 to 7.0 electron-volts.

3. The method of claim 1 wherein the wide band gap material is an insulator.

4. The method of claim 1 wherein the wide band gap material is selected from the group consisting of diamond, aluminum-nitride and gallium-nitride.

5. The method of claim 1 further comprising the steps of depositing the wide band gap material on the substrate, then depositing the conductive metal on the wide band gap material.

6. The method of claim 5 wherein a continuous film of the wide band gap material is deposited on the substrate.

7. The method of claim 5 wherein separate particles of the wide band gap material are deposited on the substrate.

8. The method of claim 7 wherein substantially all the particles of the wide band gap material are in contact with other particles of the wide band gap material.

9. The method of claim 7 wherein substantially all particles of the wide band gap material are spaced from other particles of the wide band gap material.

10. The method of claim 7 further comprising the step of applying ultrasonic agitation to the substrate after depositing the particles of the wide band gap material on the substrate but before depositing the conductive metal on the particles of the wide band gap material thereby increasing the uniformity of an uneven top surface of the wide band gap material.

11. The method of claim 1 further comprising the steps of mixing particles of the wide band gap material and particles of the conductive metal in a liquid to form a colloidal solution, depositing the colloidal solution on the substrate, then removing the solution thereby embedding the wide band gap material in the conductive metal.

12. The method of claim 11 wherein the liquid is isopropyl alcohol.

13. The method of claim 11 wherein the particles of wide band gap material are mixed in an organometallic solution of the particles of the conductive metal and the liquid thereby forming the colloidal solution.

14. The method of claim 1 wherein the conductive metal is selected from the group consisting of titanium, tungsten, gold and graphite.

15. The method of claim 1 wherein the conductive metal is selected from the group consisting of titanium, tungsten and gold and the etching is performed by ion milling.

16. The method of claim 1 wherein the conductive metal is graphite and the etching is performed by plasma etching.

17. The method of claim 1 further comprising the step of annealing the wide band gap material with the conductive metal to form a low resistance electrical contact therebetween.

18. The method of claim 1 further comprising the steps of monitoring optical emission from the wide band gap material as etching occurs and discontinuing the etching in response to changes in the optical emission.

19. The method of claim 1 wherein the emission areas protrude a height above the conductive metal less than the mean free path of electrons in the wide band gap material.

20. The method of claim 19 wherein the height is in the range of approximately 10 to 100 angstroms.

21. The method of claim 1 further comprising the step of applying a voltage to the conductive metal to force electrons in the conductive metal to ballistically tunnel through the emission areas thereby causing field emission from the emission areas.

22. The method of claim 21 wherein the voltage is no greater than 5 volts.