Isolation structure formation for semiconductor circuit fabrication

• US 5,536,675 A
• Filed: 08/07/1995
• Issued: 07/16/1996
• Est. Priority Date: 12/30/1993
• Status: Expired due to Term

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Bohr, Mark T.
• Primary Examiner(s): DANG, TRUNG Q
• Application Number:
  US08/512,078
• Time in Patent Office: 344 Days
• Field of Search: 437/67, 437/63, 437/69, 148/DIG. 50
• US Class Current: 438/427
• CPC Class Codes: H01L 21/76229 Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
• CPC Class Codes: Y10S 148/05 Etch and refill

Abstract

The deposition of oxide over a semiconductor substrate to fill trenches provides for simpler isolation processing for semiconductor circuit fabrication. Both shallow and deep trenches are etched in a semiconductor substrate for the formation of both device isolation structures and well isolation structures. Oxide is then deposited using chemical vapor deposition over the substrate, filling both the shallow and deep trenches. The resulting oxide layer over the substrate is then planarized, thus forming shallow and deep trench isolation structures in the substrate.

Claims

1. A method for forming a trench isolation structure in a semiconductor substrate, comprising the steps of:

(a) forming in said semiconductor substrate a first portion of a trench having a first width;

(b) applying a photoresist layer to said semiconductor substrate;

(c) masking said photoresist layer to define a region for a second portion of said trench within said first portion, said second portion having a second width less than said first width;

(d) forming in said region said second portion of said trench deeper than said first portion; and

(e) after forming said first and second portions of said trench, filling both said first portion and said second portion of said trench with material in a single processing step.

2. The method of claim 1, further comprising the step of growing an oxide layer in said trench prior to said filling step (e).

3. The method of claim 1, wherein said material comprises an oxide and wherein said filling step comprises the step of depositing said material over said semiconductor substrate using chemical vapor deposition to fill said trench with said material.

12. The method of claim 1, comprising the steps of:

forming a first layer over the semiconductor substrate prior to the forming step (a);

patterning the first layer prior to the filling step (e) to form a patterned first layer; and

polishing over said semiconductor substrate to planarize said material after the filling step (e) using the patterned first layer as a polish stop.

13. The method of claim 12, wherein the patterned first layer comprises silicon nitride.

14. The method of claim 12, wherein the forming step (a) and the step of patterning the first layer comprise the steps of:

(i) forming an imaging layer over the first layer,

(ii) patterning the imaging layer to form a patterned imaging layer,

(iii) etching the first layer in accordance with the patterned imaging layer to form the patterned first layer, and

(iv) etching the semiconductor substrate to form the first portion of the trench.

4. A method for forming isolation structures in a semiconductor substrate comprising the steps of:

(a) forming a first trench and a first portion of a second trench in said semiconductor substrate, said first trench and said first portion of said second trench having a first depth;

(b) applying a photoresist layer to said semiconductor substrate;

(c) masking said photoresist layer to define a region for a second portion of said second trench within said first portion while protecting said first portion and said first trench;

(d) forming a second portion of said second trench in said region, said second trench having a second depth greater than said first depth; and

(e) simultaneously filling said first trench and said second trench with material.

5. The method of claim 4, further comprising the step of growing an oxide layer in said first trench and in said second trench prior to said filling step (e).

6. The method of claim 4, wherein said second trench is a T-shaped trench.

7. The method of claim 4, wherein said semiconductor substrate has a surface, wherein said first trench has a first width at the surface of said semiconductor substrate, and wherein said second trench has a second width at the surface of said semiconductor substrate which is greater than or less than said first width.

8. The method of claim 4, wherein said semiconductor substrate has a surface, wherein said first trench has a first width at the surface of said semiconductor substrate, and wherein said second trench has a second width at the surface of said semiconductor substrate which is approximately equal to said first width.

9. The method of claim 4, wherein said material comprises an oxide and wherein said filling step comprises the step of depositing said oxide over said semiconductor substrate using chemical vapor deposition to simultaneously fill said first trench and said second trench with said oxide.

10. The method of claim 4, wherein said forming steps (a) and (b) comprise the steps of:

forming said first trench while simultaneously forming a first portion of said second trench in said semiconductor substrate; and

forming a second portion of said second trench after said first portion of said second trench has been formed.

11. The method of claim 4, wherein said step of forming said first trench and said step of forming said second trench comprise the steps of:

forming a first portion of said second trench in said semiconductor substrate; and

after said first portion of said second trench has been formed, forming said first trench while simultaneously forming a second portion of said second trench in said semiconductor substrate.

15. The method of claim 4, comprising the steps of:

forming a first layer over the semiconductor substrate prior to the forming step (a);

patterning the first layer prior to the filling step (e) to form a patterned first layer; and

polishing over said semiconductor substrate to planarize said material after the filling step (e) using the patterned first layer as a polish stop.

16. The method of claim 15, wherein the patterned first layer comprises silicon nitride.

17. The method of claim 15, wherein the forming step (a) and the step of patterning the first layer comprise the steps of:

(i) forming an imaging layer over the first layer,

(ii) patterning the imaging layer to form a patterned imaging layer,

(iii) etching the first layer in accordance with the patterned imaging layer to form the patterned first layer, and

(iv) etching the semiconductor substrate to form the first trench.

18. A method for forming isolation structures in a semiconductor substrate comprising the steps of:

(a) forming over the semiconductor substrate a first layer having a first material;

patterning the first layer to form a patterned first layer having at least a first opening for a first trench and a second opening for a second trench;

(c) forming in the semiconductor substrate said first trench having a first depth while simultaneously forming in the semiconductor substrate an upper portion of said second trench;

(d) applying a photoresist layer to said semiconductor substrate;

(e) masking said photoresist layer to define a region for a lower portion of said second trench within said upper portion;

(f) forming in said region said lower portion of the second trench, the second trench having a second depth greater than the first depth;

(g) forming over the semiconductor substrate a second layer having a second material to simultaneously fill the first trench and the second trench with the second material; and

(h) polishing the second layer using the patterned first layer as a polish stop to form the isolation structures.

19. The method of claim 18, further comprising the step of growing an oxide layer in the first trench and in the second trench prior to the forming step (g).

20. The method of claim 18, wherein the semiconductor substrate has a surface, wherein the first trench has a first width at the surface of the semiconductor substrate, and wherein the second trench has a second width at the surface of the semiconductor substrate which is greater than or less than the first width.

21. The method of claim 18, wherein the semiconductor substrate has a surface, wherein the first trench has a first width at the surface of the semiconductor substrate, and wherein the second trench has a second width at the surface of the semiconductor substrate which is approximately equal to the first width.

22. The method of claim 18, wherein the second material comprises an oxide and wherein the forming step (g) comprises the step of depositing the oxide over the semiconductor substrate using chemical vapor deposition to simultaneously fill the first trench and the second trench with the oxide.

23. The method of claim 18, wherein the forming step (c) is performed prior to the forming step (f).

24. The method of claim 18, wherein the first material comprises silicon nitride.

25. The method of claim 18, wherein the patterning step (b) and the forming step (c) comprise the steps of:

(i) forming an imaging layer over the first layer,

(ii) patterning the imaging layer to form a patterned imaging layer,

(iii) etching the first layer in accordance with the patterned imaging layer to form the first patterned layer, and

(iv) etching the semiconductor substrate to form the first trench and to form the upper portion of the second trench.