VLSIC semiconductor memory device with cross-coupled inverters with improved stability to errors

• US 5,536,960 A
• Filed: 12/22/1994
• Issued: 07/16/1996
• Est. Priority Date: 12/24/1993
• Status: Expired due to Fees

• Current Assignee: NEC Electronics Corporation (Renesas Electronics Corporation)
• Original Assignee: NEC Corporation
• Inventors: Hayashi, Fumihiko
• Primary Examiner(s): Limanek, Robert P.
• Assistant Examiner(s): Hardy, David B.
• Application Number:
  US08/362,156
• Time in Patent Office: 572 Days
• Field of Search: 257/369, 257/296, 257/297, 257/903, 257/904, 365/154, 365/155, 365/156, 365/190
• US Class Current: 257/369
• CPC Class Codes: G11C 11/4125 Cells incorporating circuit means for protecting against loss of information
• CPC Class Codes: H10B 10/125 the MOSFET being a thin film transistor [TFT]
• CPC Class Codes: Y10S 257/903 FET configuration adapted for use as static memory cell

Abstract

A static random access memory (SRAM) has a plurality of static memory cells each of which has a set of cross coupled inverters having first and second inverters. The first inverter has first and second transistors. The second inverter has primary and secondary transistors. Each of the first and the primary transistors may be, for example, a P-channel transistor. Each of the second and the secondary transistors may be, for example, an N-channel transistor. The static memory cell further has a first diode having a first forward direction and a second diode having a second forward direction. The first forward direction is directed from drains of the primary and secondary transistors to a gate of the first transistor. The second forward direction is directed from drains of the first and the second transistors to a gate of the primary transistor.

Claims

1. A semiconductor memory device comprising:

a set of cross-coupled inverters having first and second inverters, said first inverter comprising a first transistor of a first conductivity type and a second transistor of a second conductivity type, said second inverter comprising a primary transistor of said first conductivity type and a secondary transistor of said second conductivity type;

a first diode having a first forward direction which is directed from drains of said primary and said secondary transistors to a gate of said first transistor;

a second diode having a second forward direction which is directed from drains of said first and said second transistors to a gate of said primary transistor; and

an insulating member, wherein;

each of said first and said primary transistors is a thin-film transistor;

said first transistor is formed on said secondary transistor through said insulating member;

said primary transistor is formed on said second transistor through said insulating member;

said first diode is located in the gate of said first transistor; and

said second diode is located in the gate of said primary transistor.

2. A semiconductor memory device as claimed in claim 1, wherein said semiconductor memory device further comprises a capacitor through which the gate of said first transistor is connected to the gate of said primary transistor.

3. A semiconductor memory device as claimed in claim 1, wherein:

said first conductivity type is a P-type; and

said second conductivity type is an N-type.

4. A semiconductor memory device as claimed in claim 1, wherein semiconductor memory device further comprises a conductive barrier member formed on the gate of each of said second and said secondary transistors.

5. A semiconductor memory device as claimed in claim 1, wherein:

said first transistor has a first gate, a first drain, and a first source, said first source being connected to a reference voltage;

said primary transistor has a primary gate, a primary drain, and a primary source, said primary source being connected to said reference voltage;

said second transistor has a second gate, a second drain, and a second source, said second source being connected to ground, said second drain being connected to said first drain;

said secondary transistor has a secondary gate, a secondary drain, and secondary source, said secondary source being connected to said ground, said secondary drain being connected to said primary drain;

said first diode having a first cathode and a first anode, said first cathode being connected to said first gate, said first anode being connected to said second gate and said primary and said secondary drains;

said second diode having a second cathode and a second anode, said second cathode being connected to said primary gate, said second anode being connected to said secondary gate and said first and said second drains; and

wherein the semiconductor memory device further comprises;

a capacitor through which said first gate is connected to said primary gate.