Power semiconductor packaging

• US 5,537,074 A
• Filed: 05/10/1994
• Issued: 07/16/1996
• Est. Priority Date: 08/24/1993
• Status: Expired due to Term

• Current Assignee: Arthur H. Iversen, George Gabor
• Original Assignee: Arthur H. Iversen, George Gabor
• Inventors: Iversen, Arthur H., Gabor, George
• Primary Examiner(s): Nelms, David C.
• Assistant Examiner(s): PHAN, TRONG Q
• Application Number:
  US08/211,880
• Time in Patent Office: 798 Days
• Field of Search: 327/566, 327/530, 327/535, 327/537, 327/538, 327/541, 327/108, 257/337, 257/341, 257/368, 257/712
• US Class Current: 327/564
• CPC Class Codes: G05F 1/70 Regulating power factor; Regulating reactive current or power
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49111 the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/13034 Silicon Controlled Rectifier [SCR]
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/19041 being a capacitor
• CPC Class Codes: H01L 2924/30111 matching
• CPC Class Codes: H02M 1/4208 Arrangements for improving power factor of AC input
• CPC Class Codes: Y02B 70/10 Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Abstract

Power output switching circuit (215) for use in high current and high frequency applications. The output circuit provides a series of geometrically symmetric parallel spaced semiconductor converters (214A, 214B, 216A, 216B) arranged such that the voltage for each semiconductor output device is substantially equal and minimal for each device. In this way, each device exhibits substantially the same impedance, such that circuit performance is largely a function of intrinsic device characteristics, and substantially independent of cross coupling and another external influences.

Claims

1. A power control unit having first and second power connections, said unit comprising at least one cluster of semiconductor devices wherein the intrinsic characteristics of such semiconductor devices dominate the impedance of the unit, said cluster comprising:

first and second cluster power terminals;

first and second cluster control terminals;

a plurality of like semiconductor devices each having first and second power ports defining a controlled current path therebetween, and first and second control ports defining a control path for controlling the current flow through said controlled current path; and

first and second electrically conductive interconnects;

the first interconnect being connected, at a predetermined first juncture, to the first cluster power terminal;

said plurality of devices being disposed relative to said first interconnect such that the current flow paths between the first juncture and the first power ports of each of the plurality of devices are each of substantially equal impedance;

the second interconnect connecting a second power port of each of the plurality of devices in common and being connected, at a predetermined second juncture, to the second cluster power terminal;

the plurality of devices being disposed relative to said second interconnect such that current flow paths between said device second power ports and the second juncture are each of substantially equal impedance;

the first control ports of each of the plurality of devices being electrically connected to the first cluster control terminal such that the current paths between the first cluster control terminal and the first control port of each of the plurality of devices are of substantially equal impedance; and

the second control ports of each of the plurality of devices being electrically connected to the second cluster control terminal such that the current paths between the second cluster control terminal and the second control port of each of the plurality of devices are of substantially equal impedance.

2. The power control unit of claim 1 wherein said cluster further includes:

an electrically and thermally conductive substrate having a first surface to which a power port of each of the plurality of devices is electrically and thermally connected in predetermined relative disposition, the substrate operating as a heat sink for the plurality of devices;

said substrate being electrically connected to one of the interconnects.

3. The power control unit of claim 2 wherein:

the substrate first surface includes a first edge, the plurality of devices being disposed on the substrate first surface such that a nominal line joining the centers of the devices is substantially parallel to said edge; and

the substrate includes a second surface at which heat is dissipated, the second surface including cooling fins extending in planes generally orthogonal to said nominal line joining the centers of the devices.

4. The power control unit of claim 1 wherein the second control port of each of the plurality of devices comprises one of the power ports of the device.

5. The power control unit of claim 2 wherein the second control port of each of the plurality of devices comprises one of the power ports of the device.

6. The power control unit of claim 4 wherein the device power ports comprise conductive elements, such that the control path includes a portion of the controlled current path and a portion of the device power port conductive element, and the electrical connection to the second cluster control terminal is disposed to minimize the impedance of the portion of the controlled current path and device power port conductive element included in the control path.

7. The power control unit of claim 2 wherein the plurality of clusters are relatively disposed in a generally circular configuration.

8. The power control unit of claim 1 wherein at least one of the interconnects comprises a conductive sheet tapered to an apex.

9. The power control unit of claim 2 wherein at least one of the interconnects comprises a conductive sheet tapered to an apex.

10. The power control unit of claim 8 wherein the tapered conductive sheet includes apertures to provide plural current paths to the apex of substantially equal impedance.

11. The power control unit of claim 1 including a plurality of semiconductor device clusters.

12. The power control unit of claim 2 including a plurality of semiconductor device clusters.

13. The power control unit of claim 11 wherein;

the unit further includes a first power unit interconnect, electrically connecting the first power terminal of each cluster to the unit first power connection, such that the impedance of the current flow paths between the first juncture of each cluster to the unit first power connection is substantially the same;

a second power unit interconnect electrically connecting the second power terminal of each cluster to the unit second power connection, such that the impedance of the current flow paths between the second juncture of each cluster to the unit second power connection are substantially the same;

the first interconnects of each of the clusters are of substantially the same impedance;

the second interconnects of each of the clusters are of substantially the same impedance;

the first cluster control terminal of each of the clusters is electrically isolated from the first cluster control terminal of the other clusters; and

the second cluster control terminal of each of the clusters is electrically isolated from the second cluster control terminal of the other clusters.

14. The power control unit of claim 11 wherein the clusters are disposed in a generally circular configuration.

15. The power control unit of claim 11 wherein the clusters are connected in series between the unit power connections.

16. The power control unit of claim 11 including a plurality of parallel groups of series connected clusters wherein:

each group of series connected clusters is electrically connected to the unit first power connection through substantially the same impedance;

each group of series connected clusters is electrically connected to the unit second power connection through substantially the same impedance.

17. The power control unit of claim 1 wherein the first interconnect provides substantial uniform current sharing between the respective devices.

18. The power control unit of claim 17 wherein the second interconnect provides substantially uniform current sharing between the respective devices.

19. The power control unit of claim 1 wherein the impedance of the current flow paths between the first juncture and first power ports of the devices is minimized.

20. The power control unit of claim 2 wherein the impedance of the current flow paths between the first juncture and first power ports of the devices is minimized.

21. The power control unit of claim 1 wherein the impedance of the current flow paths between the second juncture and second power ports of the devices is minimized.

22. The power control unit of claim 2 wherein the impedance of the current flow paths between the second juncture and second power ports of the devices is minimized.