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Solid state imaging device having a plurality of signal lines for shift-register section extending over photoelectric conversion section

  • US 5,537,146 A
  • Filed: 12/20/1994
  • Issued: 07/16/1996
  • Est. Priority Date: 10/21/1991
  • Status: Expired due to Fees
First Claim
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1. A solid-state imaging device comprising:

  • .a semiconductor substrate having a back side for receiving radiation and a front side opposite to said back side;

    a radiation sensor section formed on said front side, said radiation sensor section including a plurality of photoelectric conversion regions arranged to accumulate signal charges generated by radiation;

    a shift-register section formed on said front side adjacent and parallel to said radiation sensor section and including a channel formed in said front side of said substrate for receiving said signal charges from said photoelectric conversion regions of said radiation sensor section and for shifting said signal charges through said shift-register section;

    an insulating layer formed on said front side to cover said radiation sensor section and said shift-register section, said insulating layer having a plurality of contact holes formed therein;

    a plurality of transfer gates formed in said insulating layer for transferring said signal charges accumulated by said photoelectric conversion regions to said shift-register section;

    a plurality of gate electrodes formed in said insulating layer, a selected one of said gate electrodes being arranged adjacent to each of said transfer gates for controlling said transferring of said signal charges from said photoelectric conversion regions to said shift-register section; and

    a plurality of signal lines formed on said insulating layer, extending in front of and isolated from said photoelectric conversion regions, each of said signal lines being connected to an associated one of said gate electrodes through an associated one of said contact holes.

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