Semiconductor sensor for detecting physical amount without thermal hypsteresis where output wiring is disposed in a stress insensitive direction
First Claim
Patent Images
1. A sensor for detecting a physical amount comprising:
- at least one resistor formed on a semiconductor substrate; and
an output wiring connected to said at least one resistor and disposed in a stress insensitive direction of said semiconductor substrate whereby a resistance state of said at least one resistor is ascertainable via said output wiring.
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Accused Products
Abstract
A sensor for detecting physical amount in which a gauge resistance value is made not to change even when a wiring material presents a yield phenomenon by wiring a wiring material Such as aluminum presenting a yield phenomenon by thermal stress in a stress insensitive direction of a piezogauge.
43 Citations
18 Claims
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1. A sensor for detecting a physical amount comprising:
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at least one resistor formed on a semiconductor substrate; and an output wiring connected to said at least one resistor and disposed in a stress insensitive direction of said semiconductor substrate whereby a resistance state of said at least one resistor is ascertainable via said output wiring. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A sensor for detecting a physical amount comprising:
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at least one resistor formed on a semiconductor substrate; and an output wiring connected to said at least one resistor and disposed in a stress insensitive direction of said semiconductor substrate whereby a resistance state of said at least one resistor is ascertainable via said output wiring; and wherein said semiconductor substrate comprises a {011} plane silicon substrate, said at least one resistor comprises a piezogauge resistance arranged in a <
110>
direction on said semiconductor substrate, and said output wiring is provided in a <
100>
direction.
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10. A sensor for detecting a physical amount comprising:
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at least one resistor formed on a semiconductor substrate; and an output wiring connected to said at least one resistor and disposed in a stress insensitive direction of said semiconductor substrate whereby a resistance state of said at least one resistor is ascertainable via said output wiring; and wherein said semiconductor substrate comprises a {011} plane silicon substrate, said at least one resistor comprises a piezogauge resistance arranged in a <
110>
direction on said semiconductor substrate, and said output wiring is provided in a <
100>
direction.
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11. A sensor for detecting a physical amount comprising:
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a piezogauge resistor formed on a semiconductor substrate; a shielding low resistance member composed of aluminum 5 to 30 nm in thickness provided so as to cover said piezogauge resistor; and a resistance state output coupled to said piezogauge resistor. - View Dependent Claims (12, 13, 14, 15)
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16. A sensor for detecting a physical amount comprising:
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a semiconductor substrate in which a direction of dicing the semiconductor substrate is set to a stress insensitive direction of said semiconductor substrate; a resistor formed on said semiconductor substrate; and an output wiring provided in a stress insensitive direction of said semiconductor substrate outputting a resistance state of said resistor; wherein said semiconductor substrate comprises a {001} plane silicon substrate, said resistor comprises a piezogauge resistance arranged in a <
110>
direction on said semiconductor substrate, a wiring for outputting a resistance state of said piezogauge resistance is provided in a <
100>
direction, and said dicing direction is set to the <
100>
direction.
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17. A sensor for detecting physical amount comprising:
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a piezogauge resistor formed on a semiconductor substrate; and means for outputting a resistance state of said piezogauge resistor;
wherein;a low resistance material that satisfies the following expression;
space="preserve" listing-type="equation">σ
.sub.y ≧
|E.sub.m (α
.sub.m -α
.sub.SiO2)Δ
t|when it is assumed that σ
y represents yield stress of a wiring material for outputting a resistance state of said resistor or a shield material for shielding the resistance, α
m the coefficient of thermal expansion thereof, α
SiO2 the coefficient of thermal expansion of the foundation SiO2 of the wiring material and the shield material, Δ
t a difference between the upper limit and the lower limit of the temperature applied to the sensor, and Em Young'"'"'s moduli of the wiring material and the shield material, is used for said wiring material and said shield material. - View Dependent Claims (18)
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Specification