Three dimensional amorphous silicon/microcrystalline silicon solar cells
First Claim
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1. In a process for fabricating solar cells, the improvement comprising:
- forming high aspect ratio contacts in a carrier collection material by repetitive pulsed laser doping to create p and n contacts having a depth substantially greater than the width thereof, resulting in very high current collection, thus providing an efficient solar cell.
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Abstract
Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/μc-Si) solar cells which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell.
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Citations
26 Claims
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1. In a process for fabricating solar cells, the improvement comprising:
forming high aspect ratio contacts in a carrier collection material by repetitive pulsed laser doping to create p and n contacts having a depth substantially greater than the width thereof, resulting in very high current collection, thus providing an efficient solar cell. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. In a solar cell having a carrier collection material, the improvement comprising:
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said carrier collection material containing only a plurality of high aspect ratio p and n contacts therein; said plurality of high aspect ratio p and n contacts having a depth substantially greater than the width thereof which penetrate the electric field at least half-way into the carrier collection material where the high strength of the electric field can collect the carriers, said p and n contacts being composed of doped carrier collection material. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A process for fabricating three dimensional deep contact a-Si/μ
- c-Si solar cells, comprising;
depositing a layer of a transparent thermal barrier material on a uv radiation transparent substrate; depositing a layer of active material on the transparent thermal barrier material; forming by pulsed energy processing a plurality of doped high aspect ratio contacts in said active material which extend deep into said active material; depositing a layer of protective material on the layer of active material; forming doped electrical connectors in said layer of protective material which align with the contacts formed in the active material; and providing a conductive grid means in contact with said doped electrical connectors. - View Dependent Claims (21, 22, 23, 24, 25, 26)
- c-Si solar cells, comprising;
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