Testing and exercising individual, unsingulated dies on a wafer

• US 5,539,325 A
• Filed: 02/08/1995
• Issued: 07/23/1996
• Est. Priority Date: 07/02/1992
• Status: Expired due to Term

• Current Assignee: LSI Logic Corporation (Broadcom, Inc.)
• Original Assignee: LSI Logic Corporation (Broadcom, Inc.)
• Inventors: Dangelo, Carlos, Rostoker, Michael D., Koford, James
• Primary Examiner(s): Nguyen, Vinh P.
• Application Number:
  US08/385,341
• Time in Patent Office: 531 Days
• Field of Search: 324/158.1, 324/73.1, 324/765, 324/754, 324/763, 371/15.1, 371/22.6, 371/25.1, 437/8
• US Class Current: 324/750.05
• CPC Class Codes: G01R 31/2831 Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates G01R31/318511 takes precedence; testing during manufacture H01L22/00
• CPC Class Codes: G01R 31/2856 Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
• CPC Class Codes: G01R 31/2884 using dedicated test connectors, test elements or test circuits on the IC under test G01R31/2855 takes precedence
• CPC Class Codes: G01R 31/2886 Features relating to contacting the IC under test, e.g. probe heads; chucks G01R31/2865 takes precedence, test connections, e.g. test sockets, or probes per se, G01R1/04 or G01R1/06
• CPC Class Codes: G01R 31/318505 Test of Modular systems, e.g. Wafers, MCM's
• CPC Class Codes: G01R 31/318511 Wafer Test
• CPC Class Codes: G11C 29/006 at wafer scale level, i.e. wafer scale integration [WSI]

Abstract

Signals (including probes) from an external system are selectively connected to a plurality of unsingulated dies on a semiconductor wafer with a minimum number of connections and an electronic selection mechanism resident on the wafer. The electronic selection mechanism is connected to the individual dies by conductive lines on the wafer. The electronic selection mechanism is capable of providing the external signals (or connecting the external probe) to a single die or groups of the dies, and electronically "walking through" the entire plurality of unsingulated dies. Redundant conductive lines may be provided. Diodes and/or fuses may be provided in conjunction with the conductive lines, to protect against various faults which may occur in the conductive lines. Redundant electronic selection mechanisms may also be provided to ensure the ability to selectively provide signals to the unsingulated dies.

Claims

1. A method of applying an electronic signal from an external source to individual, unsingulated dies on a semiconductor wafer, comprising the steps of:

(a) providing an electronic switching mechanism, on an area of the wafer external of the dies, for selectively switching said electronic signal to said dies;

(b) providing a plurality of conductive lines between the electronic switching mechanism and the dies respectively;

(c) applying said electronic signal to the electronic switching mechanism; and

(d) applying a selection signal to the electronic switching mechanism for switching said electronic signal to a selected die designated by said selection signal;

in which step (d) comprises applying said selection signal to the electronic switching mechanism using an e-beam probe.

2. A method according to claim 1, further comprising the steps of:

(e) providing a pad on an area of the wafer external of said dies;

(f) connecting said pad, with a second conductive line on the wafer, to an input of the electronic switching mechanism; and

(g) applying said electronic signal to said pad.

3. A method according to claim 1, further comprising the step of:

(e) providing redundant electronic mechanisms, on the wafer, for applying said electronic signal to said dies.

4. A method as in claim 1, in which:

step (a) comprises providing the electronic switching mechanism in an area of the wafer peripherally external of said dies; and

step (b) comprises providing said conductive lines in areas of the wafer between said dies.

5. A method as in claim 1, in which:

step (a) comprises providing the electronic switching mechanism in an unused die area of the wafer; and

step (b) comprises providing said conductive lines in areas of the wafer between said dies.

6. A method according to claim 1, in which:

step (a) comprises providing the electronic switching mechanism as including an address decoder for decoding addresses corresponding to said dies respectively; and

step (d) comprises applying said selection signal to the electronic switching mechanism as including an address of said selected die.

7. A method according to claim 1, in which:

step (a) comprises providing the electronic switching mechanism as including a counter, and an address decoder for decoding counts of the counter as addresses corresponding to said dies respectively; and

step (d) comprises applying said selection signal to the electronic switching mechanism as a count input to the counter for changing a count thereof to correspond to an address of said selected die.

8. A method of performing dynamic burn-in of individual, unsingulated dies on a semiconductor wafer, comprising the steps of:

(a) providing an electronic switching mechanism, on an area of the wafer external of the dies, for selectively switching an electronic burn-in signal to said dies;

(b) providing a plurality of conductive lines between the electronic switching mechanism and the dies respectively;

(c) applying said electronic burn-in signal to the electronic switching mechanism; and

(d) applying a selection signal to the electronic switching mechanism for switching said electronic burn-in signal to a selected die designated by said selection signal;

in which step (d) comprises applying said selection signal to the electronic switching mechanism using an e-beam probe.

9. A method according to claim 8, further comprising the steps of:

(e) providing a pad on an area of the wafer external of said dies;

(f) connecting said pad, with a second conductive line on the wafer, to an input of the electronic switching mechanism; and

(g) applying said electronic burn-in signal to said pad.

10. A method according to claim 8, further comprising the step of:

(e) providing redundant electronic mechanisms, on the wafer, for applying said electronic burn-in signal to said dies.

11. A method as in claim 8, in which:

step (a) comprises providing the electronic switching mechanism in an area of the wafer peripherally external of said dies; and

step (b) comprises providing said conductive lines in areas of the wafer between said dies.

12. A method as in claim 8, in which:

step (a) comprises providing the electronic switching mechanism in an unused die area of the wafer; and

step (b) comprises providing said conductive lines in areas of the wafer between said dies.

13. A method according to claim 8, in which:

step (a) comprises providing the electronic switching mechanism as including an address decoder for decoding addresses corresponding to said dies respectively; and

step (d) comprises applying said selection signal to the electronic switching mechanism as including an address of said selected die.

14. A method according to claim 8, in which:

step (a) comprises providing the electronic switching mechanism as including a counter, and an address decoder for decoding counts of the counter as addresses corresponding to said dies respectively; and

step (d) comprises applying said selection signal to the electronic switching mechanism as a count input to the counter for changing a count thereof to correspond to an address of said selected die.

15. A method of applying an electronic signal from an external source to individual, unsingulated dies on a semiconductor wafer, comprising the steps of:

(a) providing an electronic switching mechanism, on an area of the wafer external of the dies, for selectively switching said electronic signal to said dies;

(b) providing a plurality of conductive lines between the electronic switching mechanism and the dies respectively;

(c) applying said electronic signal to the electronic switching mechanism; and

(d) applying a selection signal to the electronic switching mechanism for switching said electronic signal to a selected die designated by said selection signal;

in which;

step (d) comprises applying said selection signal to the electronic switching mechanism using an e-beam probe;

step (a) comprises providing the electronic switching mechanism as including a flip-flop; and

the method further comprises the steps of;

(e) providing a touch pad on an area of the wafer external of said dies; and

(f) connecting said touch pad, with a second conductive line on the wafer, to a signal input of the flip-flop; and

step (d) comprises applying said selection signal to said touch pad using said e-beam probe.

16. A method according to claim 15, in which step (a) comprises providing said flip-flop such that said input is a toggle input.

17. A method according to claim 15, in which:

step (a) comprises providing the electronic switching mechanism as including a set-reset flip-flop;

the method further comprises the steps of;

(e) providing a set touch pad on an area of the wafer external of said dies;

(f) connecting said set touch pad, with a second conductive line on the wafer, to a set input of the flip-flop;

(g) providing a reset touch pad on an area of the wafer external of said dies;

(h) connecting said reset touch pad, with a third conductive line on the wafer, to a reset input of the flip-flop; and

step (d) comprises selectively applying said selection signal to said set touch pad and said reset touch pad using said e-beam probe.

18. A method of performing dynamic burn-in of individual, unsingulated dies on a semiconductor wafer, comprising the steps of:

(a) providing an electronic switching mechanism, on an area of the wafer external of the dies, for selectively switching an electronic burn-in signal to said dies;

(b) providing a plurality of conductive lines between the electronic switching mechanism and the dies respectively;

(c) applying said electronic burn-in signal to the electronic switching mechanism; and

(d) applying a selection signal to the electronic switching mechanism for switching said electronic burn-in signal to a selected die designated by said selection signal;

in which;

step (d) comprises applying said selection signal to the electronic switching mechanism using an e-beam probe;

step (a) comprises providing the electronic switching mechanism as including a flip-flop; and

the method further comprises the steps of;

(e) providing a touch pad on an area of the wafer external of said dies; and

(f) connecting said touch pad, with a second conductive line on the wafer, to a signal input of the flip-flop; and

step (d) comprises applying said selection signal to said touch pad using said e-beam probe.

19. A method according to claim 18, in which step (a) comprises providing said flip-flop such that said input is a toggle input.

20. A method according to claim 18, in which:

step (a) comprises providing the electronic switching mechanism as including a set-reset flip-flop;

the method further comprises the steps of;

(e) providing a set touch pad on an area of the wafer external of said dies;

(f) connecting said set touch pad, with a second conductive line on the wafer, to a set input of the flip-flop;

(g) providing a reset touch pad on an area of the wafer external of said dies;

(h) connecting said reset touch pad, with a third conductive line on the wafer, to a reset input of the flip-flop; and

step (d) comprises selectively applying said selection signal to said set touch pad and said reset touch pad using said e-beam probe.