Multi-mode power amplifier

• US 5,541,554 A
• Filed: 03/06/1995
• Issued: 07/30/1996
• Est. Priority Date: 03/06/1995
• Status: Expired due to Term

• Current Assignee: Motorola Solutions, Inc.
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Olson, Scott A., Stengel, Robert E.
• Primary Examiner(s): Mullins, James B.
• Application Number:
  US08/399,019
• Time in Patent Office: 512 Days
• Field of Search: 330/51, 330/124 R, 330/295, 455/93, 455/116, 455/127
• US Class Current: 330/51
• CPC Class Codes: H03F 1/0277 Selecting one or more amplifiers from a plurality of amplifiers
• CPC Class Codes: H03F 2200/111 the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
• CPC Class Codes: H03F 2203/7209 the gated amplifier being switched from a first band to a second band
• CPC Class Codes: H03F 3/72 Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal

Abstract

An amplifier (100) has first and second operation modes. The amplifier (100) includes an amplifier input portion (110) and an amplification gain stage. The amplification stage has two gain paths (120, 140) coupled in parallel to the amplifier input portion (110). At least one of the gain paths (120) has an amplification component (121) that in part forms a switch to select between the first and second operation modes.

Claims

1. An amplifier having a first operation mode and being responsive to a control signal to select a second operation mode, the amplifier comprising:

an amplifier input portion;

an amplification gain stage, comprising;

a first gain path coupled to the amplifier input portion;

a second gain path coupled in parallel with the first gain path to the amplifier input portion, the second gain path comprising an amplification component, the amplification component having a selectively enabled radio frequency (RF) low impedance termination to ground;

an impedance transformation network coupled to the amplification component; and

RF switch formed from the application component and the impedance transformation network, the RF switch being responsive to the control signal to enable the RF low impedance termination to ground at the amplification component such that the impedance transformation network presents a high impedance, thereby disabling the second gain path to select the second operation mode.

2. The amplifier of claim 1, wherein the amplification component comprises a power transistor.

3. The amplifier of claim 2, wherein the low impedance termination to ground comprises the power transistor.

4. The amplifier of claim 3, further comprising a pass transistor that provides a direct current bias to the power transistor in response to the control signal.

5. The amplifier of claim 1, wherein the transformation network comprises a quarter wavelength transmission line.

6. A multi-mode amplifier having an amplifier input portion for providing an input signal, and an amplification stage responsive to a control signal to select between first and second operation modes to provide an output signal, the amplification stage comprising:

a first gain path coupled to the amplifier input portion;

a second gain path coupled to the amplifier input portion in parallel with the first gain path, the second gain path including an applification component to amplify the input signal, the amplification component having a selectively enabled RF low impedance termination to ground;

a combiner coupled to the first and second gain paths, and having circuitry that combines the first and second gain paths to provide the output signal, the combiner comprising an impedance transformation network coupled to the power transistor, the impedance transformation network being responsive to a RF low impedance to present a high impedance; and

an RF switch comprising the amplification component and the impedance transformation network, the RF switch being responsive to the control signal to selectively enable and disable the second gain path, by disabling and enabling the RF low impedance termination to ground, respectively.

7. The multi-mode amplifier of claim 6, wherein the amplification component comprises a radio frequency power transistor coupled to the amplifier input portion.

8. The multi-mode amplifier of claim 7, further comprising a pass transistor coupled to the radio frequency power transistor.

9. The multi-mode amplifier of claim 7, wherein the impedance transformation network comprises a quarter wavelength transmission line.

10. A multi-mode power amplifier having an amplifier input portion for providing an input signal, and an amplification stage responsive to a control signal to select between first and second operation modes to provide an amplified output signal, the amplification stage comprising:

a first gain path coupled to the amplifier input portion;

a second gain path coupled to the amplifier input portion in parallel with the first gain path, the second gain path including a power transistor to amplify the input signal, the power transistor being coupled to the amplifier input portion;

a combiner coupled to the first and second gain paths, and having circuitry that combines signals from the first and second gain paths to provide the amplified output signal in the first operation mode, the combiner comprising an impedance transformation network coupled to the power transistor, the impedance transformation network being responsive to a RF low impedance to present a high impedance; and

a RF low impedance termination to electrical ground selectively coupled at the power transistor and responsive to the control signal to select the second operation mode.

11. A multi-mode power amplifier responsive to a control signal to select between first and second operation modes to provide an amplified output signal, comprising:

a first amplification stage providing an input signal;

a second amplification stage coupled to the first amplification stage, the second amplification stage comprising;

first and second gain paths coupled in parallel to the first amplification stage, each of the first and second gain paths comprising;

a power transistor to amplify the input signal, the power transistor being coupled to the first amplification stage; and

a impedance transformation network coupled to the power transistor;

a pass transistor coupled to the power transistors of the first and second gain paths to provide a direct current bias;

wherein the impedance transformation network of the first gain path and the second gain path are electrically coupled at a common node to form a combiner that combines the first and second gain paths; and

a RF low impedance termination to electrical ground selectively coupled to the impedance transformation network of the first gain path to present a high impedance at the common node;

wherein the RF low impedance termination to ground, and the power transistor of the first gain path together operate as an RF switch, responsive to the control signal, to disable the first gain path thereby selecting between first and second operation modes.

12. The multi-mode power amplifier of claim 11, wherein for each of the first and second gain paths, the impedance transformation network comprises a quarter wavelength transmission line.

13. The multi-mode power amplifier of claim 11, wherein the combiner combines outputs from the power transistors of the first and second gain paths to provide the amplified output signal when the control signal selects the first operation mode.

14. The multi-mode power amplifier of claim 13, wherein the combiner presents output from the power transistor of the second gain path, but not from the first gain path, when the control signal selects the second operation mode.