Controlled recrystallization of buried strap in a semiconductor memory device

• US 5,543,348 A
• Filed: 03/29/1995
• Issued: 08/06/1996
• Est. Priority Date: 03/29/1995
• Status: Expired due to Term

• Current Assignee: GlobalFoundries, Inc., Infineon Technologies AG, Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: International Business Machines Corporation, Siemens AG, Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Stengl, Reinhard J., Hammerl, Erwin, Mandelman, Jack A., Ho, Herbert L., Shiozawa, Junichi
• Primary Examiner(s): CHAUDHARI, CHANDRA P
• Application Number:
  US08/412,442
• Time in Patent Office: 496 Days
• Field of Search: 437/47, 437/60, 437/78, 437/79, 437/190, 437/919, 148/DIG. 14
• US Class Current: 438/249
• CPC Class Codes: H10B 12/038 the capacitor being in a trench in the substrate

Abstract

A method of forming a coupled capacitor and transistor is provided. A trench is formed in a semiconductor substrate and an impurity-doped first conductive region is then formed by filling the trench with an impurity-doped first conductive material. The impurity-doped first conductive region is etched back to a first level within the trench. An insulating layer is then formed on a sidewall of the portion of the trench opened by the etching back of the impurity-doped first conductive region and a second conductive region is formed by filling the remainder of the trench with a second conductive material. The insulating layer and the second conductive region are etched back to a second level within the trench and an amorphous silicon layer is formed in the portion of the trench opened by the etching back of the insulating layer and the second conductive region. The undoped amorphous silicon layer is etched back to a third a level within the trench. The undoped amorphous silicon layer is then recrystallized. Impurities are outdiffused from the impurity-doped first conductive region to the semiconductor substrate through the recrystallized silicon layer. A source/drain region of the transistor is formed adjacent to an intersection of the trench and the surface of the semiconductor substrate. The outdiffused impurities and the recrystallized silicon layer constitute a buried strap for electrically connecting the first and second conductive layers in the trench to the source/drain region.

Claims

1. A method of forming a coupled capacitor and transistor, the method comprising the steps of:

forming a trench in a semiconductor substrate;

forming an impurity-doped first conductive region by filling said trench with an impurity-doped first conductive material;

etching back said impurity-doped first conductive region to a first level within said trench;

forming an insulating layer on a sidewall of the portion of said trench opened by the etching back of said impurity-doped first conductive region;

forming a second conductive region by filling the remainder of said trench with a second conductive material;

etching back said insulating layer and said second conductive region to a second level within said trench;

forming an undoped amorphous silicon layer in the portion of said trench opened by the etching back of said insulating layer and said second conductive region;

etching back said undoped amorphous silicon layer to a third level within said trench;

recrystallizing said amorphous silicon layer;

outdiffusing impurities from said impurity-doped first conductive region to said semiconductor substrate through said recrystallized silicon layer; and

forming a source/drain region of said transistor adjacent to an intersection of said trench and the surface of said semiconductor substrate, said outdiffused impurities and said recrystallized silicon layer constituting a buried strap for electrically connecting said first and second conductive layers in said trench to said source/drain region.

2. The method according to claim 1, wherein said amorphous silicon layer is recrystallized by a heat treatment at approximately 550 degrees Celsius in a nitrogen ambient.

3. The method according to claim 1, wherein a native oxide is removed from the portion of said trench opened by the etching back of said insulating layer and said second conductive region prior to the step of forming an amorphous silicon layer.

4. The method according to claim 1, wherein said impurity-doped first conductive material is N+ polysilicon.

5. The method according to claim 1, wherein the step of forming a second conductive region comprises forming an impurity-doped second conductive region by filling the remainder of said trench with an impurity-doped second conductive material.

6. The method according to claim 5, wherein said impurity-doped second conductive material is N+ polysilicon.

7. A method of forming a buried strap for coupling a capacitor and a transistor, the method comprising the steps of:

forming a trench in a semiconductor substrate;

forming an impurity-doped first conductive region by filling said trench with an impurity-doped first conductive material;

etching back said impurity-doped first conductive region to a first level within said trench;

forming an insulating layer on a sidewall of the portion of said trench opened by the etching back of said impurity-doped first conductive region;

forming a second conductive region by filling the remainder of said trench with a second conductive material;

etching back said insulating layer and said second conductive region to a second level within said trench;

forming an amorphous silicon layer in the portion of said trench opened by the etching back of said insulating layer and said second conductive region;

recrystallizing said amorphous silicon layer; and

outdiffusing impurities from said impurity-doped first conductive region to semiconductor substrate through said recrystallized silicon layer, whereby said outdiffused impurities and the recrystallized silicon layer form said buried strap.

8. The method according to claim 7, wherein said amorphous silicon layer is recrystallized by a heat treatment at approximately 550 degrees Celsius in a nitrogen ambient.

9. The method according to claim 7, wherein a native oxide is removed from the portion of said trench opened by the etching back of said insulating layer and said second conductive region prior to the step of forming an amorphous silicon layer.

10. The method according to claim 7, wherein said impurity-doped first conductive material is N+ polysilicon.

11. The method according to claim 7, wherein the step of forming a second conductive region comprises forming an impurity-doped second conductive region by filling the remainder of said trench with an impurity-doped second conductive material.

12. The method according to claim 11, wherein said impurity-doped second conductive material is N+ polysilicon.

13. A method of manufacturing a semiconductor memory device, the method comprising the steps of:

forming a trench in a semiconductor substrate;

forming a conductive region in said trench by filling said trench with a conductive material, at least an upper portion of said conductive region being insulatively spaced from said semiconductor substrate by an insulating layer and at least a portion of said conductive material being doped with impurities;

etching back said conductive region and said insulating layer to a level in said trench;

forming an amorphous undoped silicon layer in the portion of said trench opened by etching back said conductive region and said insulating layer;

recrystallizing the amorphous undoped silicon layer;

outdiffusing impurities from said impurity-doped polysilicon to said semiconductor substrate via said recrystallized silicon layer to form an outdiffused region; and

forming a transfer gate having source/drain regions on a surface of said semiconductor substrate, said outdiffused region and the recrystallized silicon constituting a buried strap for electrically connecting said transfer gate to said conductive region.

14. The method according to claim 13, further comprising the step of:

removing a native oxide in the portion of said trench opened by etching back said conductive region and said insulating layer prior to the step of forming an amorphous undoped silicon layer.

15. The method according to claim 13, wherein the amorphous undoped silicon layer is recrystallized by heating at approximately 550 degrees Celsius in a nitrogen ambient.