Wafer scribe technique using laser by forming polysilicon
First Claim
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1. A method for preventing cracks as a result of a scribing operation, comprising the steps of:
- forming a channel in a wafer to provide descrite die;
heating a first portion of said wafer under the channelcooling a second portion of said first portion to form a polysilicon structure that eliminates the uniform structures of said wafer of silicon within the second portion;
scribing said second portion in order to separate said die.
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Abstract
A channel is formed in a wafer to fore descrite die. A portion of the wafer is heated in the channel. A portion of the heated portion is cooled to eliminate the uniform structure. The cooled portion is scribed to separate the die.
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Citations
12 Claims
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1. A method for preventing cracks as a result of a scribing operation, comprising the steps of:
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forming a channel in a wafer to provide descrite die; heating a first portion of said wafer under the channel cooling a second portion of said first portion to form a polysilicon structure that eliminates the uniform structures of said wafer of silicon within the second portion; scribing said second portion in order to separate said die. - View Dependent Claims (2, 3, 4)
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5. A method for preventing cracks as a result of a scribing operation, comprising the steps of:
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forming a channel in a wafer to provide descrite die; heating a first portion of said wafer under the channel; heating a second portion of said wafer under the channel; cooling a third portion and fourth portion of said wafer of said first and second portion respectively to form a polysilicon structure within the first and second portion structure that eliminates the uniform structure of the wafer of silicon. - View Dependent Claims (6, 7, 8)
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9. A method for preventing cracks as a result of a descrite operation, comprising the steps of:
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forming a channel in a wafer to provide descrite die; heating a first portion of said wafer under the channel on a first side of said wafer; heating a second portion of said wafer on a second side of said wafer; and cooling a third portion of said second portion to form a polysilicon structure eliminates the uniform structure of said wafer of silicon within the third portion scribing said third portion in order to separate said die. - View Dependent Claims (10, 11, 12)
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Specification