Semiconductor member and semiconductor device having a substrate with a hydrogenated surface

• US 5,543,648 A
• Filed: 12/19/1995
• Issued: 08/06/1996
• Est. Priority Date: 01/31/1992
• Status: Expired due to Fees

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Miyawaki, Mamoru
• Primary Examiner(s): Hille, Rolf
• Assistant Examiner(s): Williams, Alexander O.
• Application Number:
  US08/574,784
• Time in Patent Office: 231 Days
• Field of Search: 257/347, 257/353, 257/354, 257/345, 257/627, 257/628
• US Class Current: 257/347
• CPC Class Codes: H01L 21/02063 the processing being the formation of vias or contact holes
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0243 Surface structure
• CPC Class Codes: H01L 21/02433 Crystal orientation
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02658 Pretreatments cleaning in general H01L21/02041
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187

Abstract

A semiconductor member with a monocrystalline semiconductor layer for forming a functional element. The main plane of the monocrystalline semiconductor layer has a center line average surface roughness Ra of not more than 0.4 nm when the main plane is washed with an aqueous ammonia-hydrogen peroxide solution in a ratio of NH₄ OH:H₂ O₂ :H₂ O of 1:1:5 by volume at a washing temperature of 85° C. for a washing time of 10 minutes.

Claims

1. A semiconductor member comprising:

a substrate having a hydrogenated surface and a monocrystalline semiconductor layer for forming a functional element on said substrate, wherein the main plane of the monocrystalline semiconductor layer has a center line average surface roughness Ra of not more than 0.4 nm as a surface state characteristic when the main plane is washed with an aqueous ammonia-hydrogen peroxide solution in a ratio of NH₄ OH;

H₂ O₂ ;

H₂ O of 1;

1;

5 by volume at a washing temperature of 85°

C. for a washing time of 10 minutes.

3. A semiconductor member according to claim 1 or 2, wherein the monocrystalline semiconductor layer is an epitaxial growth layer formed on said substrate.

4. A semiconductor member according to claim 1 or 2, wherein the monocrystalline semiconductor layer is formed on said substrate through an insulating layer.

9. A semiconductor member according to claim 3, wherein said epitaxial growth layer is formed on a 4°

off substrate.

2. A semiconductor member comprising:

a substrate having a hydrogenated surface and a monocrystalline semiconductor layer for forming a functional element on said substrate, wherein the main plane of the monocrystalline semiconductor layer has a center line average surface roughness Ra of not more than 0.4 nm as a surface state characteristic when the main plane is washed with an aqueous ammonia-hydrogen peroxide solution in a ratio of NH₄ OH;

H₂ O₂ ;

H₂ O of 1;

1;

5 by volume at a washing temperature of 85°

C. for a washing time of 10 minutes, and wherein the etching-treated surface of the monocrystalline semiconductor layer has a center line average surface roughness Ra of not more than 0.4 nm as an etched surface state characteristic, when repeatedly subjected to wet oxidation at 1,000°

C. for 4 hours and the washing at the washing temperature of 85°

C. for the washing time of 10 minutes, thereby etching away the monocrystalline semiconductor layer to a depth of 40 nm from the main plane.

5. A semiconductor device comprising:

a substrate having a hydrogenated surface and a monocrystalline semiconductor layer for forming a functional element on said substrate, the main plane of which has a center line average surface roughness Ra of not more than 0.4 nm as a surface state characteristic when the main plane is washed with an aqueous ammonia-hydrogen peroxide solution in a ratio of NH₄ OH;

H₂ O₂ ;

H₂ O of 1;

1;

5 by volume at a washing temperature of 85°

C. for a washing time of 10 minutes and a functional element provided on the monocrystalline semiconductor layer.

7. A semiconductor device according to claim 5 or 6, wherein the monocrystalline semiconductor layer is an epitaxial growth layer formed on said substrate.

8. A semiconductor device according to claim 5 or 6, wherein the monocrystalline semiconductor layer is formed on said substrate through an insulating layer.

6. A semiconductor device comprising:

a substrate having a hydrogenated surface and a monocrystalline semiconductor layer, the main plane of which has a center line average roughness Ra of not more 0.4 nm as a surface state characteristic when the main plane is washed with an aqueous ammonia-hydrogen peroxide solution in a ratio of NH₄ OH;

H₂ O₂ ;

H₂ O of 1;

1;

5 by volume at a washing temperature of 85°

C. for a washing time of 10 minutes and the etching-treated surface of which has a center line average surface roughness Ra of not more than 0.4 nm as an etched surface state characteristic, when repeatedly subjected to wet oxidation at 1,000°

C. for 4 hours and the washing at the washing temperature of 85°

C. for the washing time of 10 minutes, thereby etching away the monocrystalline semiconductor layer to a depth of 40 nm from the main plane, and a functional element provided on the monocrystalline semiconductor layer.