Visible light laser diode and manufacturing method of visible light laser diode
First Claim
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1. A visible light laser diode comprising:
- an active layer having a band gap energy;
a cladding layer disposed on said active layer; and
an etching stopping layer for forming said cladding layer, having a shape, and located at a position within said cladding layer, said etching stopping layer comprising at least one crystalline film of Gax In1-x P (0.53≦
x≦
0.57) having a lower etching rate in an etching solution than said cladding layer, having a larger band gap energy in bulk than the band gap energy of said active layer, and that produces a quantum well structure within the cladding layer having a quantum energy level exceeding an energy corresponding to the wavelength of light produced by the visible light laser diode.
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Abstract
A visible light laser diode includes an etching stopping layer having a lower etching rate in an etching solution than a cladding layer, having a larger band gap energy in bulk than the band gap energy of the active layer, including a layer that stops etching, and having a band gap energy exceeding an energy corresponding to the oscillation wavelength of the visible light laser diode. Therefore, the cladding layer can be selectively etched with satisfactory controllability to a predetermined shape. After the etching process, even with a laminated etching stopping layer partly remaining in the cladding layer, the etching stopping layer does not absorb light emitted from the active layer.
13 Citations
19 Claims
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1. A visible light laser diode comprising:
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an active layer having a band gap energy; a cladding layer disposed on said active layer; and an etching stopping layer for forming said cladding layer, having a shape, and located at a position within said cladding layer, said etching stopping layer comprising at least one crystalline film of Gax In1-x P (0.53≦
x≦
0.57) having a lower etching rate in an etching solution than said cladding layer, having a larger band gap energy in bulk than the band gap energy of said active layer, and that produces a quantum well structure within the cladding layer having a quantum energy level exceeding an energy corresponding to the wavelength of light produced by the visible light laser diode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for manufacturing a visible light laser diode including processing a cladding layer formed on an active layer into a shape comprising:
employing a material having a lower etching rate in an etching solution than a material forming a cladding layer and having a larger band gap energy in bulk than the band gap energy of said active layer as an etching stopping layer, forming an etching stopping layer including at least one crystalline film of Gax In1-x P (0.53≦
x≦
0.57) within said cladding layer and has a thickness that forms a quantum well structure with said cladding layer that has a quantum energy level exceeding an energy corresponding to the oscillation wavelength of the visible light laser diode.- View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
Specification